SI4831DY ,P-Channel 30-V (D-S) MOSFET With Schottky Diode FaxBack 408-970-5600S-61859—Rev. A, 10-Oct-992-1Si4831DYNew ProductVishay Siliconix
SI4831DY
P-Channel 30-V (D-S) MOSFET With Schottky Diode
Si4831DY
New Product Vishay Siliconix
VISHAY
P-Channel 3o-v (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY “A
VDs (V) rosmn) (C2) ID (A) Ns
-30 0.045 @ VGS = -1 0 v :t 5 of P
0.090@Vss=-4.5V i3.5
SCHOTTKY PRODUCT SUMMARY 16
v, (V) V.
VKA (V) Diode Forward Voltage IF (A)
30 0.53 v @ 3A 3
Top View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage (MOSFET) N/rss -30
Reverse Voltage (Schottky) VKA 30 V
Gate-Source Voltage (MOSFET) VGS ce20
TA = 25°C cl: 5
Continuous Drain Current (To = 150°C) (MOSFET)' b ID
TA = 70°C d: 3.9
Pulsed Drain Current (MOSFET) IDM 3:20 A
Continuous Source Current (MOSFET Diode Conduction)' b ls -1.7
Average Foward Current (Schottky) IF 3
Pulsed Foward Current (Schottky) IFM 20
I I . I TA = 25°C 2
Maximum Power Dissipation (MOSFET?! b
TA = 70°C 1.28
' I I I TA=25°C 1.83
Maximum Power Dissipation (Schottky)' b
TA = 70°C 1.17
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C
a. Surface Mounted on FR4 Board.
b. t s 10 sec.
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Si4831DY
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THERMAL RESISTANCE RATINGS
Parameter Device Symbol Typical Maximum Unit
MOSFET 52 62.5
Maximum Junction-to-Ambient (t s 10 sec)a
Schottky 56 68
MOSFET 82 100
Maximum Junction-to-Ambient (t = steady state)a 'C/W
Schottky 91 110
MOSFET 27 33
Maximum Junction-to-Foot RthJF
Schottky 32 40
a. Surface Mounted on FR4 Board.
b. t s 10 sec.
MOSFET SPECIFICATIONS IT,, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGs, ID = -250 0A -1.0 V
Gate-Body Leakage less Vos = 0 V, VGS = i 20 V i 100 nA
VDS = -24 V, VGS = o v -1
Zero Gate Voltage Drain Current IDSS [IA
VDs=-24V,VGs=0V,To=750C -10
On-State Drain Currenta ID(on) Vros 2 -5 V, VGS = -10 V -20 A
VGS = -10 V, ID = -5 A 0.036 0.045
Drain-Source On-State Resistancea rDswn) Q
N/ss = .45 V, ko = -3.5 A 0.060 0.090
Forward Transconductancea ge, Vos = -15 V, ID = -5 A 9 S
Diode Forward Voltage" VSD ls = -1.7 A, VGS = 0 V Ah75 -1.2 V
Dynamich
Total Gate Charge Q9 10 20
Gate-Source Charge Qgs VDS = -15 V, VGS = -5 V, ID = -5 A 4_5 nC
Gate-Drain Charge di 3.6
Turn-On Delay Time tdwn) 13 25
Rise Tlme tr VDD = -15 V, RL = 15 Q 15 30
Turn-Off Delay Time id(oii) ID E -1 A, VGEN = -10 V, RG = 6 Q 37 70 ns
Fall Time If 14 30
Source-Drain Reverse Recovery Time trr IF = -1.7 A, di/dt = 100 Alps 35 70
a. Pulse test; pulse width 5 300 us. duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS IT,, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
IF = 3A 0.485 0.53
Forward Voltage Drop VF V
IF = 3A, To =125°C 0.42 0.47
v, = 30 V 0.008 0.1
Maximum Reverse Leakage Current lrm v, = 30 V, TJ = 75°C 0.4 5 mA
v, = 30V, TJ = 125°C 6.5 20
Junction Capacitance CT v, = 15 V 102 pF
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Si4831DY
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TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) MOSFET
Output Characteristics Transfer Characteristics
V = 10 thru 5 V
16 GS 16
Cir" ti:.]
E 12 E 12
g 4 V 9
's 'r,
(i, 8 / (i, 8
D Cl Tc = 125°C
4 3 v - 4
25°C \
4 -551
0 0 A I
0 2 4 6 8 10 0 1 2 3 4 5
VDs - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.16 1500
A 1200
Ct 0.12
E 8 900
V) = l f:
d)' 0.08 - VGS 4.5V w,,.,,--''''" t):os,
C -..---'"" N
C) .---""" Q 600
I, = I
F, VGS 10 V 0 Coss
tif 0.04 y
CI 300 "s,,......,
g 'csts: "m-.-,
0 4 8 12 16 2O 0 6 12 18 24 30
ID - Drain Current(A) Vos - Drain-to-Source Voltage(V)
Gate Charge On-Resistance vs. Junction Temperature
10 1.8
I l I l
VDS=1OV VGS=1OV
|D=5.7A 1_6_ Iro=5.7A
li? 8 l A s,,,,,,,-''''''
(D a I
o: 1.4
(i-'; 8 /
it 6 g Fi
E E g 1.2
g 4 a o 1.0
a's " o g,
Iii i L
o / g 0.8
8 2 h'
0 4 8 12 16 20 -50 -25 O 25 5O 75 100 125 150
Qg - Total Gate Charge(nC)
TJ - Junction Temperature CC)
DocumentNumber: 71061
S-61859-Rev, A, 10-Oct-99
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Si4831DY
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TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) MOSFET
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.20
A 0.16
'it IO f.'..
E T J = 150°C 8
5 f,-'; 0.12
cn C) 0.08
w 5, l = 5 7 A
- 8 D .
L 0.04 M.--..-,
0.00 0.25 0.50 0.75 1.00 1.25 1.50 0 2 4 6 8 10
Vso - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.8 40
0.6 / 32 l
g 0.4 ID = 250 0A "
g 0 2 // g l
g4 it \
'iii'" Ah0 ci'. 16
-0 2 / h
"'''" 8
-0.4 "s,. _
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 30
To - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Ji g 0.2 Notes:
g Ch Pros,
ii E 0.1 1
E , 0.1 " _
8 a 0.05 -ly-1 ta t
(i-", e, 1.Duty Cycle, D-- il
F, 0.02 2. Per Unit Base = RmJA = 82°CNV
a 3. TJM - TA = PDMZIhJAm
4. s n M t d
Single Pulse u ace ounie
10-4 10-3 1052 IO-l 1 10
Square Wave Pulse Duration (sec)
1 00 600
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DocumentNumber: 71061
S-61859-Rev, A, 10-Oct-99
VISHAY Si4831DY
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) MOSFET
2 Normalized Thermal Transient Impedance, Junction-to-Foot
8 F, 0.1
2 0.02
Single Pulse
10-4 10-3 10-2 Io-l 1 10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) SCHOTTKY
Reverse Current vs. Junction Temperature Forward Voltage Drop
E, 1 ii.:".
's 0 1 5
3% 0.01 E
0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8
T: - Junction Temperature (°C) VF - Forward Voltage Drop (V)
Capacitance
Ci? 400
urs. 200
_ 100 "ss-..........,
O 6 12 18 24 30
VKA - Reverse Voltage (V
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Si4831DY
Vishay Siliconix New Product
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) SCHOTTKY
Normalized Thermal Transient Impedance, Junction-to-Ambient
8 lg ta al 1
(-i,' fE 1. Duty Cycle, D = T,
g 2. Per Unit Base = RmJA = 91°C/W
Z 3. Ta, - TA = PDMZmJA“)
4. Surface Mounted
ur" 10-3 Itr2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
2 Normalized Thermal Transient Impedance, Junction-to-Foot
tn a.)
Single Pulse
IO-A 1O-3 10-2 Ity-l 1 10
Square Wave Pulse Duration (sec)
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