SI4830DY-T1 ,Dual N-Channel 30-V (D-S) MOSFET with Schottky DiodeS-31989—Rev. C, 13-Oct-033V - Gate-to-Source Voltage (V)r - On-Resistance ( ) I - Drain Current ..
SI4831DY ,P-Channel 30-V (D-S) MOSFET With Schottky Diode FaxBack 408-970-5600S-61859—Rev. A, 10-Oct-992-1Si4831DYNew ProductVishay Siliconix
SI4830DY-T1
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Si4830DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.022 @ vss = 10 v 7.5
0.030 @ VGS = 4.5 v 6.5
SCHOTTKY PRODUCT SUMMARY e?
Vso (V)
VDs (V) Diode Forward Voltage IF (A)
30 0.50 V @ 1.0 A 2.0
SO-8 U
Top IAew O
Ordering Information: Si4830DY S1
Si4830DYt (with Tape and Reel)
N-Channel MOSFET
, lisa Schottky Diode
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage Vos 30
Gate-Source Voltage VGS $20
TA = 25°C 7.5 5.7
Continuous Drain Current = 150°C a I
m ) TA = 70°C D 6.0 4.6
Pulsed Drain Current IBM 30
Continuous Source Current (Diode Conduction)a Is 1.7 0.9
TA = 25°C 2.0 1.1
Maximum Power Dissipationa PD W
TA = 70"C 1.3 0.7
Operating Junction and Storage Temperature Range Tu, Tstg -55 to 150 ''C
THERMAL RESISTANCE RATINGS
MOSFET Schottky
Parameter Symbol Typ Max Typ Max Unit
t s 10 sec 52 62.5 53 62.5
Maximum Junction-to-Ambienta RthJA
Steady-State 93 110 93 110 Cl CAN
Maximum Junction-to-Foot (Drain) Steady-State Rthoc 35 40 35 40
a. Surface Mounted on 1" x l" FR4 Board.
DocumentNumber: 71161
S-31989-F%v. C, 13-Oct-03
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MOSFET SPECIFICATIONS tTo = 25°C UNLESS OTHERWISE NOTED).
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage 1/ssith) I/os = vss, b = 250 11A 0.8 V
Gate-Body Leakage lass VDS = 0 V, VGS = $20 V :t 100 nA
VDS = 30 V, VGS = o V Ch-l 1
Ch-2 100
Zero Gate Voltage Drain Current bss Ch-1 15 11A
VDS = 30 V, VGS = o V, To = 85°C Ch-2 2000
On-State Drain Currentb 'D(on) VDS = 5 V, VGS = 10 V 20 A
VGS = 10 v, ID = 7.5 A 0.013 0.022
Drain-Source On-State Resistanceb rDS(on) Q
VGS = 4.5 v, ID = 6.5 A 0.024 0.030
Forward Transconductanceb gfs VDS = 15 V, ID = 7.5 A 22 S
cm 0.8 1.2
Diode Forward Voltageb VSD ls = 1 A, VGS = O V Ch-2 0.47 0.5 V
Dynamica
Total Gate Charge % 13 20
Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 7.5 A nC
Gate-Drain Charge di 2.7
Gate Resistance Rg 0.5 3.2 Q
Turn-On Delay Time td(on) 8 16
Rise Time t, VDD=15V1 RL=159 10 2O
Turn-Off Delay Time tuioff) ID _ 1 A, VGEN = 10 V, RG = 6 Q 21 40
Fall Time tf 10 20 ns
Ch-l 40 8O
Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 Alps Ch-2 32 70
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width s 300 ps, duty cycle 3 2%.
SCHOTTKY SPECIFICATIONS tTa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
IF = 1.0 A 0.47 0.50
Forward Voltage Drop VF IF = 1.0 A, TJ = 125°C 0.36 0.42 V
v, = 30 V 0.004 0.100
Maximum Reverse Leakage Current Irm V, = 30 V, To = 100°C 0.7 10 mA
v, = -30 v, TJ =125°C 3.0 20
Junction Capacitance CT V, = 10 V 50 pF
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DocumentNumber: 71161
S-31989-Rev. C, 13-Oct-03
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VISHAY
Si4830DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
MOSFET
Output Characteristics
Transfer Characteristics
20 _ 20
--'''""
VGs=10thru4V we''''"" 3V
16 / 16
Ct". tii".
E 12 f/ E 12
E 8 E 8
l l Ts = 125''C
- 4 - 4 25°c‘ y)
2 V "hd
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.040 1000 l
9‘, 0.032 A 800
o k Ns,,,,,.
2 w Ciss
Iz, 0.024 VGS - 4.5 V - Is. 600
' 0.016 ' 400 l "N
ii- O l "ss. Cass
L 0.008 200 Crss
ss,,......".'..,
0.000 0
0 4 8 12 16 20 0 6 12 18 24 30
ID - Drain Current (A) Vos - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 _ " 1.6 _
F VDs=15V Ves=10V
v b--7.5A sp'' A |D=7.5A /
8: 8 Cir 1.4
i; g'. Ei"
'z-', 6 / g (-i' ld? 1
T r': g "
s,'. o fl
p, , V
o 4 e 1.0
' S..),
w 'll /
> 2 0.8 ,,,,,e"'
o 3 6 9 12 15 -50 -25 0 25 50 75 100 125 150
Qg - TotalGate Charge(nC)
TJ - Junction Temperature (°C)
DocumentNumber: 71161
S-31989-F%v. C, 13-Oct-03
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Si483ODY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
MOSFET
Source-Drain Diode Forward Voltage
T J = 150°C A
A 10 Cl
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
ID = 250 [LA
i? -0.0
E "ssc li..
jt -0.2 a
"gi" k?
iff o .
> - .4 'ss,
-0 6 \\
-50 -25 0 25 50 75 100 125 150
To - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
b = 7.5A
4 6 8 1O
VGS - Gate-to-Source Voltage (V)
Single Pulse Power
10-3 10-2 10-1 1 10 100 600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
5 Duty Cycle = 0.5
, "il.
g t, 0.1
Single Pulse
10-4 10-3 10-2 IO-l
Square Wave Pulse Duration (sec)
Notes:
-ly-1 _
1. Duty Cycle, D = T2
2. Per Unit Base = Rth0A = 93°C/W
3, To, - TA = PDMZthJAm
4. Surface Mounted
10 100 600
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DocumentNumber: 71161
S-31989-Rev. C, 13-Oct-03
“5% Si4830DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) MOSFET
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
Single Pulse
10'4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) SGHOTTKY
20 Reverse Current vs. Junction Temperature Forward Voltage Drop
TJ = 150°
LE, 1 Ci"
g 0.1 6'
I 0.01 I
0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 ld? 1.5
To - Temperature (°C) VF - Forward Voltage Drop (V)
Capacitance
sij. 120
0 'css::::::
40 a.--.-,
O 6 12 18 24 30
Vos - Drain-to-Source Voltage (V)
Document Number: 71161 www.vishay.com
S-31989-F%v. C, 13-Oct-03 5
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