SI4820DY ,N-Channel, 30-V (D-S) MOSFETS-03950—Rev. F, 26-May-032-1Si4820DYVishay SiliconixMOSFET SPECIFICATIONS (T = 25C UNLESS OTHERWIS ..
SI4822 ,Single N-Channel/ Logic Level/ PowerTrench MOSFETFeaturesGeneralDescription MOSFET-Channel, Logic Level, PowerTrenchSingle N O( TAV Vo oI C CΔ / Δ ..
SI4822DY ,Single N-Channel, Logic Level, PowerTrench MOSFETFeaturesGeneralDescription MOSFET-Channel, Logic Level, PowerTrenchSingle N O( TAV Vo oI C CΔ / Δ ..
SI4824DY ,Asymmetrical Dual N-Channel 30-V (D-S) Rated MOSFET FaxBack 408-970-5600S-56946—Rev. C, 23-Nov-982-1Si4824DYVishay Siliconix
SI4820DY
N-Channel, 30-V (D-S) MOSFET
VISHAY
Si4820DY
Vishay Siliconix
N-Channel Reduced th, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Q) In (A)
30 0.0135@VGS= 10V 10
O.020@VGS=4.5V 8
o-] tr,
S D G I-
G D N-Channel MOSFET
Top Vew
Ordering Information: Si4820DY
Si4820DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos 30
Gate-Source Voltage VGS d: 20
TA = 25°C 10
Continuous Drain Current (T J = 150oC)a, b ID
TA = 70°C 8
Pulsed Drain Current (10 us Pulse VWdth) IDM 50
Continuous Source Current (Diode Conduction)", b ls 2.3
TA = 25°C 2.5
Maximum Power Dissipation PD W
TA = 70°C 1.6
Operating Junction and Storage Temperature Range (MOSFET and Schottky) T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 50
Maximum Junction-to-Ambient (MOSFETY1 RthJA °CIW
Steady State 70
a. Surface Mounted on FR4 Board.
b. t s 10 sec.
Document Number: 70806 www.vishay.com
S-03950-Rev. F, 26-May-03 2-1
Si4820DY
Vishay Siliconix
VISHAY
MOSFET SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) Ws = VGs, ID = 250 “A 1 V
Gate-Body Leakage less VDS = 0 V, VGS = $20 V l 100 nA
VDs=24N/,VGs=0V 1
Zero Gate Voltage Drain Current loss WA
VDS=24V,VGS=0V,TJ=55°C 25
On-State Drain Currenta low”) Vos 2 5 V, VGS = 10 V 20 A
. . I/cs = 10 V, ID = 10A 0.0105 0.0135
Drain-Source On-State Resistancea roam) Q
V68 = 4.5 V, ID = 5 A 0.0155 0.020
Forward Transconductancea gfs Vros = 15 V, ID = 10 A 28 S
Diode Forward Voltagea VSD ls = 2.3 A, VGS = 0 V 0.74 1.2
Dynamicb
Total Gate Charge % 20 30
Gate-Source Charge Qgs VDs = 15 V, VGS = 5.0 V, b = 10 A 8 nC
Gate-Drain Charge di 7
Gate Resistance Rg 0.5 1l5 Q
Turn-On Delay Time tam) 15 30
RiseTime tr VDD=15V,RL=15Q 8 15
Turn-Off Delay Time tum“) ID _ 1 A, VGEN = 10 V, Re = 6 Q 45 90 ns
Fall Time tf 18 4O
Source-Drain Reverse Recovery Tlme trr IF = 2.3 A, di/dt = 100 Alps 50 80
a. Pulsetest; pulse width 5 300 us. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com Document Number: 70806
2-2 S-03950-Rev. F, 26-May-03
ic,fiF,Ai, Si4820DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
50 _ I 50
/ VGS=10thru5V
“S 30 I 4 V - E) 30 l
S 20 1” S 20
I . Tc = 125°C
- 10 - 10
25°C /
3 v l "s - 55°C
0 1 2 3 4 5 0 1 2 3 4 5
Vros - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.05 3500
9, 0.04 I A 2800 ¥Ciss
oi). 8
,1: C l
g 0 03 2 2100
I 0.02 VGS = 4.5 V - I 1400
5, 0 Coss
8 VGS = 10 V
0.01 700 Crss "---,
0.00 0
0 10 20 30 40 50 0 5 10 15 20 25 30
ID - Drain Current (A) Vos - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 _ 1.6 l _
VDS=15V /'' VGS=10V
5 ID = 10 A a ID = 10 A
g 8 / V 1.4 I
53 cu "
> f1i. a
y 6 8 T, 1.2
c?) “F E
S? , v
m 4 1.0
© p" '
w JI /
J' 2 o 8 /
0 8 16 24 32 4O -50 -25 O 25 50 75 100 125 150
O9 - Total Gate Charge (nC) TJ - Junction Temperature CC)
Document Number: 70806
www.vishay.com
S-03950-Rev. F, 26-May-03
Si4820DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
5 10 Tu = 150°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
va, - Source-to-Drain Voltage(V)
Threshold Voltage
0.4 "s,
0.2 "s,
ID = 250 WA
'r'' -o.o
ie' 'tc
Q -0.2
'l)..] -0.4 'Nc
-0.6 "N
-50 -25 0 25 50 75 100 125 150
To - Temperature CC)
roman) — On-Resistance (Q)
Power (W)
On-Resistance vs. Gate-to-Source Voltage
0.06 ID = 10 A
0.02 (
0 2 4 6 8 10
V33 - Gate-to-Source Voltage (V)
Single Pulse Power
0.01 0.10 1.00 10.00
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 1O-2
Notes:
_.L: _
1. Duty Cycle, D = -
2. Per Unit Base = RthJA = 70”CNV
3. TJM - TA = PDMZthAm
4. Surface Mounted
1 10 30
Square Wave Pulse Duration (sec)
www.vishay.com
Document Number: 70806
S-03950-Rev. F, 26-May-03
:
www.loq.com
.
