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SL6140 , 400MHz Wideband AGC Amplifier
SL6140 , 400MHz Wideband AGC Amplifier
SI4816DY
N-Channel 30-V (D-S) MOSFET with Schottky Diode
“5% Si4816DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY m
VDs (V) roswn, (Q) ID (A) Ns
0.022 @VGS=10V 6.3 tl P
Channel-1
0.030 @ VGS = 4.5 v 5.4 oo
0.013@VGS=10V 10 s.
Ch l-2
anne 0.0185 @ VGS = 4.5 v 8.6 tttlv
SCHOTTKY PRODUCT SUMMARY
. Vso (V) D1
VDs (V) Diode Forward Voltage IF (A) o
30 0.50 V @ 1.0 A 2.0
SO-8 G1 o-F--
N-Channel 1
MOSFET D S1ID2
E- R Schottky Diode
N-Channel 2
Top bfery MOSFET o o
Ordering Information: Si4816DY 82 A
Si4816DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
ChanneI-1 Channel-2
Parameter Symbol 10 secs Steady State 10 secs l Steady State Unit
Drain-Source Voltage VDS
Gate-Source Voltage VGS 20
TA = 25°C 6.3 5.3 10 7.7
. D . T = 1 o a I
Continuous ran Current( J 50 C) TA = 70°C D 5.4 4.2 8.2 6.2
Pulsed Drain Current IBM 30 40
Continuous Source Current (Diode Conduction)" ls 1.3 0.9 2.2 1.15
TA = 25°C 1.4 1.0 2.4 1.25
M . P Di . . a P W
axxmum ower issipation TA = 70°C D 0.9 0.64 1.5 0.8
Operating Junction and Storage Temperature Range T J, Tstg -65 to 150 “C
THERMAL RESISTANCE RATINGS
Channel-1 Channel-dt Schottky
Parameter Symbol Typ Max Typ Max Typ Max Unit
t s 10 sec 72 90 43 53 48 60
Maximum Junction-to-Ambienta RthJA
Steady-State 100 125 82 100 80 100 0 CAN
Maximum Junction-to-Foot (Drain) Steady-State RthJC 51 63 25 30 28 35
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71121 www.vishay.com
S-03951-Rev. B, 26-May-03 2-1
Si4816DY “SEPIA?
Vishay Siliconix
MOSFET SPECIFICATIONS ITo = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gat Th h ldV lt v v v I 250 A Ch-l 0.8 v
a e res o o a e = , = 'u
9 GS(th) DS GS D Ch-2 1.0
Ch-l 100
Gate-Bod Leaka e I V = 0 V, V = 20 V nA
Y g GSS DS GS Ch-2 100
v --24UV --ov Ch-l 1
DS , GS Ch-2 100
Zero Gate Voltage Drain Current bss Ch 1 15 11A
v =24V,V =0V,T=85°C -
DS GS J Ch-2 2000
On State Drain C rrentb I V 5 V V 10 V Ch-1 20 A
- I u = , =
D(on) DS GS Ch-2 30
VGS = 10 V, ID = 6.3 A Ch-l 0.018 0.022
Vas-- 10V, kr-- 10A Ch-2 0.0105 0.013
Drain-Source On-State Resistanceb rDS(on) Q
Vss = 4.5 V, ID = 5.4 A Ch-1 0.024 0030
V95 = 4.5 v, ID = 8.6 A Ch-2 0.015 00185
b fs-- 15 v, ID=6.3A Ch-1 17
orward ransconductance gfs VDS = 15 V, ID = 10 A Ch-2 28 S
ls=1.3A,Vss--0V Ch-l 0.7 1.1
Diode Forward Voltage? VSD V
ls = 1 A, VGS = 0 v Ch-2 0.47 0.5
Dynamic"
Ch-l 8.0 12
Total Gate Charge % 15 23
Channel-I Ch-2
VDs=15V, VGS= 5V,ID= 6.3A Ch-1 1.75
Gate-Source Charge Qgs nC
Channel-2 Ch-2 5.3
VDs=15V, VGs=5V,ID=-10A Ch-1 3.2
Gate-Drain Char e Q
g gd Ch-2 4.6
Ch-1 1.5 6.1
G t R . t R Q
a e esus ance g Ch-2 0.5 2.6
Ch-1 10 20
T rn-On Dela Time t
u y I d(on) Ch-2 15 30
Channel-l
Rise Time tr VDD = 15 v, RL = 15 Q Ch-l 5 10
lD----1A,VGEN=10V,RG=6Q Ch-2 5 10
Channel-2 Ch-1 26 50
Turn-Off Delay Time td(0ff) VDD = 15 V, RL = 15 Q Ch-2 44 80 ns
ID _ 1A,VGEN= 10V, Rs=6Q
Ch-l 8 16
Fall Time tr
Ch-2 12 24
IF = 1.3 A, di/dt = 100 Alps Ch-1 30 60
Source-Drain Reverse Recovery Tune trr .
IF = 2.2 A, di/dt = 100 W05 Ch-2 32 70
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width 5 300 us, duty cycle s 2%.
SCHOTI'KY SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
IF =1.0A 0.47 0.50
Forward Voltage Drop VF IF = 1.0 A, T J = 125°C 0.36 0.42 V
www.vishay.com DocumentNumber: 71121
2-2 S-03951-Rev. B, 26-May-03
VISHAY
Si4816DY
Vishay Siliconix
SCHOTTKY SPECIFICATIONS tTa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
v, = 30 V 0.004 0.100
Maximum Reverse Leakage Current lrm V, = 30 V, TJ = 100"C 0.7 10 mA
v,-- -30V,TJ= 125°C 3.0 20
Junction Capacitance CT v, = 10 V 50 pF
Document Number: 71121 www.vishay.com
S-03951-Rev. B, 26-May-03 2-3
Si4816DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
CHANNEL"
Output Characteristics
Transfer Characteristics
30 l 30
V63 = 10 thru 4V
24 24 g
g.." 2
E 3 V "c."
E 18 --- E 18 I
CI 12 S 12
D I = o
_ 0 TC‘ 125 c
6 _ 6 l _
25°C /y',
1 V 2 v \/ -55''C
\ 1 #14 1 l
2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.030 1000 t
a 0.024 ti? 800
V 3 Ns,,,. Ciss
g 0.018 g 600
_g VGS = 4.5 V g l
6 0.012 sz =10V I 400 l 's
"il" "ss. ass
_8 0.006 200 Crss
a'-.-,
0.000 O
8 16 24 32 40 0 6 12 18 24 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 _ 1.8 _ l
S VDS=15V VGS=10V
V lro=6.3A A 1.6- lro=6.3A
3% 8 9, /
g E a 1.4 I
8 g m w.,,,-"''
y, 6 8 M /
go) I ' E 1.2 /
a', E 1 o
E 4 I .
C) " ','" /
8 / fl 0.8 -
> 2 I ,,,w''
3 6 9 12 15 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) To - Junction Temperature CC)
www.vishay.com DocumentNumber: 71121
2.4 S-03951-Rev. B, 26-May-03
VISHAY
Si4816DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
CHANNEL"
Source-Drain Diode Forward Voltage
On-Resistancevs. Gate-to-Source Voltage
40 0.05
A a 0.04
3? Tu = 150°C 2;
g 10 g
E I','-'; 0.03
's c's
8 C) 0.02 ,
' L, ID = 10 A
m s'sce 'is,...:,
" 0.01
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 2 4 6 8 10
l/so - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.6 100
A 0.2 ID = 250 0A
g -0,0 g 60
'l, -0Q "s, t 1
E "s, 'l
(T) 40
0 -0.4 l
> 'ss l
-0.6 "ss, \
-1.0 0
-50 -25 O 25 50 75 100 125 150 0.001 0.01 0.1 1 10
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
"t' Duty Cycle = 0.5
g E 0.2
E E Notes:
E , 0.1 T
g a 0.1 PDM
2 ,5 1
F, -1y-1 12 t
a 1. Duty Cycle, D = T;
2. Per Unit Base = RthJA = 100°C/W
. 3. TJM - TA = PDMZmJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Document Number: 71121 www.vishay.com
S-03951-Rev. B, 26-May-03
Si4816DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) CHANNEL"
2 Normalized Thermal Transient Impedance, Junction-to-Foot
it,' Duty Cycle = 0.5
s a 0.2
"if',' g
tt ' 0.1
g E 0.1
g _ 0.05
fl 0.02
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) CHANNEL-2
Output Characteristics Transfer Characteristics
VGS =10thru 4 V
Ct ig".
E 24 E 24
C C2 TC = 125°C f
E 16 Es 16
_ 8 3 v - 8 25°C
I "?sd' /
2 V -55 C
0 0 _ l
0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Vos - Drain-to-Source Voltage (V) N/ss - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.030 2500
A ts,,.,. Ciss
Cl 0.024 2000 _
g VGS = 4.5 V 7;
2 0.018 8 1500
& N/ss = 10 V o.
, 0.012 Q 1000
J) l Coss
J? 0.006 500
Ns,,.,..,....,
0.000 0
0 8 16 24 32 40 0 6 12 18 24 30
ID - Drain Current(A) VDS - Drain-to-Source Voltage(V)
www.vishay.com Document Number: 71121
S-03951-Rev. B, 26-May-03
VISHAY
Si4816DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Gate Charge
A VDS = 15 V
ty 8 7 ID = 9.5 A A
8, Cit
5 6 g-,' g
c'; C .5
g 4 I a
o 2 L,
0 6 12 18 24 30
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
<5, T J = 150°C I
ti) 10 g
'sl] “F
m 'ij]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
0.2 \ ID = 250 11A
Ff.. F,
' -0.0 g
> -0 2 tttc g
g." 'ss a
iri 'Nc
c) Ah4
> 'ss.
-0.6 \
.03 "sc,,
-50 -25 0 25 50 75 100 125 150
T: - Temperature (°C)
CHANNEL-2
1 8 On-Resistance vs. Junction Temperature
1.6 7 veg =1(‘)v /
ID = 9.5 A "
1.4 wr'''''''
1.2 _,.,,-''''''''''
-50 -25 0 25 50 75 100 125 150
To - Junction Temperature (°C)
On-Resistancevs. Gate-to-Source Voltage
b = 9.5A
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
0.001 0.01 0.1 1 10
Time (sec)
Document Number: 71121
S-03951-Rev. B, 26-May-03
www.vishay.com
Si4816DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
CHANNEL-2
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
tn a.)
Ji g 0.2 Notes:
g o. PDM
E , OA -1 " _
~(_; - l. Duty Cycle, D = T2
g 2. Per Unit Base = RNA = 82°CIW
z 3. TJM - TA = PDMZmJAm
' 4. Surface Mounted
Single Pulse
10-4 10-3 10 100 600
Square Wave Pulse Duration (sec)
2 Normalized Thermal Transient Impedance, Junction-to-Foot
Iz, Duty Cycle = 0.5
'1izj',o. 0.2
"if',' g
'tl?, E 0.1
E g 0.1
g _ 0.05
a 0.02
Single Pulse
10-4 10-3 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71121
S-03951-Rev. B, 26-May-03
“5% Si4816DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) SCHOTTKY
20 Reverse Current vs. Junction Temperature Forward Voltage Drop
T J = 150°C
E, 1 'iit"
0 0.1 <3
II 0.01 I
0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5
To - Temperature CC) VF - Forward Voltage Drop (V)
Capacitance
0 1ssste.ss
40 A...-..-,
0 6 12 18 24 30
N/os - Drain-to-Source Voltage (V)
Document Number: 71121
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S-03951-Rev. B, 26-May-03 2-9
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