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SI4812DY
N-Channel 30-V (D-S) MOSFET with Schottky Diode
VISHAY
Si4812DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
Vos (V) rDS(on) (Q) ID (A)
0.018@VGs=10V 0.9
30 0.028 @ VGS = 4.5 v 7.3
SCHOTTKY PRODUCT SUMMARY
. vso (V) ti''
Vos (V) Diode Forward Voltage IF (A) \
30 0.50
[email protected] 1.4
SO-8 o
L-- . .
S D H- ip Schottky Diode
N-Channel MOSFET
Top IAew O
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 sec I Steady State Unit
Drain-Source Voltage (MOSFET) 30
Reverse Voltage (Schottky) DS 30 V
Gate-Source Voltage (MOSFET) VGS i 20
TA = 25''C 0.9 6.9
Continuous Drain Current (To = 150°C) (MOSFET)a, b ID
TA = 70°C 7.5 5.6
Pulsed Drain Current (MOSFET) IBM 50 A
Continuous Source Current (MOSFET Diode Conduction)", b Is 2.1 1.2
Average Foward Current (Schottky) IF 1.4 0.8
Pulsed Foward Current (Schottky) IFM 30
TA = 25°C 2.5 1.4
Maximum Power Dissipation (MOSFET)av b
TA = 70°C 1.6 0.9
b TA = 25°C 2.0 1.2
Ma im m Po er Dissi ation Schottk a,
Xt u w I IP I ( y) TA = 70°C 1.3 0.8
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 ''C
THERMAL RESISTANCE RATINGS
Parameter Device Symbol Typical Maximum Unit
MOSFET 40 50
. . - - . a
Maximum Junction to Ambient (t s 10 sec) Schottky 50 60
R °CIW
MOSFET thJA 72 90
Maximum Junction-to-Ambient (t = steady state)a
Schottky 85 100
a. Surface Mounted on FR4 Board.
b. t s 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/productlspice.htm
Document Number: 71775
S-05117-Rev. E, 17-Dec-01
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Si4812DY \"SEHM'
Vishay Siliconix
MOSFET - SCHOTTKY SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) Vos = VGS, ID = 250 pA 1 V
Gate-Body Leakage less Vos = 0 V, VGS = i 20 V i 100 nA
VDS=30V, VGs= 0V 0.004 0.100
Zero Gate Voltage Drain Current = = = a
(MOSFET + Schottky) Koss VDS 30 V, VGS 0 V, TJ 100 C 0.7 10 mA
1/Ds=30V,Vss=0VTu= 125°C 3.0 20
On-State Drain Currenta Imon) VDS 2 5 V, VGS = 10 V 20 A
Vss-- 10 V, lro=0.9A 0.012 0.018
Drain-Source On-State Resistancea rDS(on) Q
VGS = 4.5 v, ID = 7.3 A 0.019 0.028
Forward Transconductancea gfs VDs = 15 V, ID = 0.9 A 23 s
IS: 1.0 A,VGS= 0V 0.45 0.50
Schottky Diode Forward Voltage8 VSD V
Is: 1.0A,VGS=0V,TJ= 125°C 0.33 0.42
Dynamicb
Total Gate Charge Q9 13 24
Gate-Source Charge Qgs VDS = 15 V, VGS = 5 V, ID = 0.9 A 4 nC
Gate-Drain Charge di 5.7
Turn-On Delay Time mm”) 16 25
Rise Time tr VDD = 15 V, RL = 15 Q 10 20
Turn-Off Delay Time td(ott) '0 E 1 A, VGEN = 10 V, Rs = 6 Q 35 50 ns
Fall Tlme tf 13 20
Source-Drain Reverse Recovery Time trr IF = 1.0 A, dildt = 100 Alps 35 70
a. Pulsetest; pulse width s 300 us, duty cycle S 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com Document Number: 71775
2 S-05117-Rev. E, 17-Dec-01
“5% Si4812DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
50 _ _ 50
// 1/Gs=10thru5V
2?, 'iii'
E 4 V E
g 30 g 30
o l f o
.s /" .E
D 20 Q 20
D , co Tc = 125°C
10 10 pf
3 V 25°C ff
tist,; 5 -55°C
0 1 2 3 4 5 0 1 2 3 4 5
VDs - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
(h10 1800
A 1500
g 0.08 A 'ss
a 'tls ''"'"-s-.,...... Ciss
5 8 1200
ii 0.06 g l
ttt ID
a 8 900
' 0.04 I \
g O 600 hc 055
v VGS = 4.5 V y "sd'
E 0 02 _.........---" Crss "'"s---.,..__,
' VGS = 10 V 300
(hoo 0
0 10 20 30 40 50 0 5 10 15 20 25 30
ID - Drain Current (A) Vos - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 l I 1.6 l I
A VDS=15V /''" VGS=1OV /
i) 8 ID=0.9A / a 1.4-ID=th9A
01 v . l
(i, E G" ,/
F? 6 g f,d 1.2
0% k',! E ',,,w''"
g 4 ' V 1.0
8 " E"
' iii"
8 2 / f o 8 ./
0 5 10 15 20 25 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) To - Junction Temperature (°C)
Document Number: 71775 www.vishay.com
S-05117-Rev. E, 17-Dec-01 3
Si4812DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
TJ = 150°C a" 0.
ig" 10 I
93 55 o
5 .tt_7 .
m 1 , .
w "j?,]
0.1 0.
0.0 0.2 0.4 0.6 0.8 1.0 12
V30 - Source-to-Drain Voltage (V)
Reverse Current (Schottky)
'ir." 1
6' li.
g 0.1 "
'lt 0.01
25 50 75 100 125 150
TJ - Junction Temperature(°C)
On-Resistance vs. Gate-to-Source Voltage
ID = 9.0A
sts...
2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Single Pulse Power (MOSFET)
0.1 1 10 100 600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient (MOSFET)
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 10-1 1
Square Wave Pulse Duration (sec)
Notes:
_.L: _
1. Duty Cycle, D = T,
2. Per Unit Base = RmJA = 72°C/W
3. TJM - TA = PDMZmJAm
4. Surface Mounted
10 100 600
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DocumentNumber: 71775
S-05117-Rev. E, 17-Dec-01
“5% Si4812DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky)
Duty Cycle = 0.5
Notes:
-ly-1 _
1, Duty Cycle, D = T
2. Per Unit Base = Rth0A = 85°CIW
Normalized Effective Transient
Thermal Impedance
3. TJM - TA = PoMirmoA(t)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 30
Square Wave Pulse Duration (sec)
Document Number: 71775 www.vishay.com
S-05117-Rev. E, 17-Dec-01 5
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