SI4810DY ,N-Channel, 30-V (D-S) Rated MOSFET + Schottky DiodeS-31062—Rev. F, 26-May-032-3V - Gate-to-Source Voltage (V) r - On-Resistance ( ) I - Drain Curr ..
SI4810DY-T1 ,N-Channel 30-V (D-S) MOSFET with Schottky DiodeS-31062—Rev. F, 26-May-032-3V - Gate-to-Source Voltage (V) r - On-Resistance ( ) I - Drain Curr ..
SI4812BDY-T1-GE3 , N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4812DY ,N-Channel 30-V (D-S) MOSFET with Schottky DiodeS-05117—Rev. E, 17-Dec-01 1Si4812DYVishay SiliconixMOSFET + SCHOTTKY SPECIFICATIONS (T = 25C UNLES ..
SI4812DY-T1 ,N-Channel 30-V (D-S) MOSFET with Schottky DiodeS-41426—Rev. G, 26-Jul-04 4Normalized Effective TransientI− Reverse Current (mA) I− Source Curren ..
SI4812DY-T1-E3 ,N-Channel 30-V (D-S) MOSFET with Schottky DiodeABSOLUTE MAXIMUM RATINGS (T = 25C UNLESS OTHERWISE NOTED)ALimit10 sec Steady StateParameter Symbol ..
SL5500 ,Photon coupled isolator.
SL5500 ,Photon coupled isolator.
SL5500 ,Photon coupled isolator.
SL5500 ,Photon coupled isolator.
SL5-500 ,Photon coupled isolator.
SL5500300 ,6-Pin DIP Phototransistor Output Optocoupler 6-PIN PHOTOTRANSISTOROPTOCOUPLERSSL5500 SL5501 SL5504 SL5511PACKAGESCHEMATIC1 6ANODE BA ..
SI4810DY
N-Channel, 30-V (D-S) Rated MOSFET + Schottky Diode
VISHAY
Si4810DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
Vos (V) rDS(on) (Q) ID (A)
0.0135@VGs=10V IO
30 0.020 @ VGS = 4.5 v 8
SCHOTTKY PRODUCT SUMMARY
. VSD (V)
VDS (V) Diode Forward Voltage IF (A)
30 0.53 V @ 3.0 A 4.0
D D D D
SO-8 T T T o
S D Ordering Information:
S D Si4810DY E- lka
G D Si481ODY-T1 (with Tape and Reel) G t-
N-Channel MOSFET (L Schottky Diode
T v 0 0
op Iew S S S
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage (MOSFET) 30
Reverse Voltage (Schottky) DS 30 V
Gate-Source Voltage (MOSFET) VGS i 20
TA = 25°C 10
Continuous Drain Current (T J = 150°C) (MOSFET)' b ID
TA = 70°C 8
Pulsed Drain Current (MOSFET) IDM 50 A
Continuous Source Current (MOSFET Diode Conduction)' b ls 2.3
Average Foward Current (Schottky) IF 4.0
Pulsed Foward Current (Schottky) IFM 50
b TA = 25°C 2.5
Ma im m Power Dissi ation MOSFE a,
XI u I IP I ( T) TA=70°C 1.6
S b TA = 25°C 2.0
Maximum Power Dissi ation chottk a,
p ( y) TA = 70°C 1.3
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Device Symbol Typical Maximum Unit
MOSFET 50
Maximum Junction-to-Ambient (t s 10 sec)a Schottky 60
R °CIW
MOSFET WA 70
Maximum Junction-to-Ambient (t = steady state)a
Schottky 80
a. Surface Mounted on FR4 Board.
b. t s 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/productlspice.htm
Document Number: 70802
S-31062-Rev. F, 26-May-03
www.vishay.com
Si4810DY
Vishay Siliconix
VISHAY
MOSFET - SCHOTTKY SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) Vos = VGS, ID = 250 pA 1 V
Gate-Body Leakage less Vos = 0 V, VGS = i 20 V i 100 nA
VDS=30V, VGs= 0V 0.007 0.100
Zero Gate Voltage Drain Current = = = a
(MOSFET + Schottky) Koss VDS 30 V, VGS 0 V, TJ 100 C 1.5 10 mA
1/Ds=30V,Vss=0VTu= 125°C 6.5 20
On-State Drain Currenta Imon) VDS 2 5 V, VGS = 10 V 20 A
N/ss-- 10V, ko-- 10A 0.0105 0.0135
Drain-Source On-State Resistancea rDS(on) Q
VGS = 4.5 V, lo = 5 A 0.0155 0.020
Forward Transconductancea gfs VDs = 15 V, ID = 10 A 28 s
ls = 3.0 A, VGS = 0 V 0.485 0.53
Schottky Diode Forward Voltage8 VSD V
IS = 3.0 A, VGS = 0 V, TJ = 125°C 0.420 0.47
Dynamicb
Total Gate Charge Q9 20 30
Gate-Source Charge Qgs VDS = 15 V, VGS = 5 V, ID = 10 A 8 nC
Gate-Drain Charge di 7
Gate Resistance Rg 0.5 1.0 1.6 Q
Turn-On Delay Time tdwn) 15 30
Rise Time tr VDD =15 V, RL =15 g 8 15
Turn-Off Delay Time tam lo 2 1 A, VGEN = 10 V, Re = 6 Q 45 90 ns
Fall Time tr 18 40
Source-Drain Reverse Recovery Time trr IF = 3.0 A, di/dt = 100 Alps 36 7O
a. Pulsetest; pulse width 5 300 us, duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
Document Number: 70802
S-31062-Rev. F, 26-May-03
VISHAY
Si4810DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50 l I 50
VGS = 10 thru 5 V
Ci. g.]
E 30 g E 30
g 4 V at) l
E 20 E 20
I I Tc = 125°C
_ IO - IO
25''C /
3 v l "s -55oC
o 1 2 3 4 5 0 1 2 3 4 5
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.05 3500
E 0.04 l A 2800 Ics,. Ciss (MOSFET)
l-',. 8
g 0.03 2 2100
I 0.02 7 VGS = 4.5 V I 1400
e - O Ns, coss (MOSFET + Schottky)
if VGS = 10 V
0.01 700 Crss (MOSFET)
0.00 0
0 10 20 30 40 50 0 5 10 15 20 25 30
ID - Drain Current (A) Vos - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 _ 1.6 l
' VDS=15V Vss=10V
V ID = 10 A / a ID = 10 A
8, 8 v 1.4 I
E g A "
(D - T7
o E S o,w'''
g 6 8 g 1.2
u? 5 g
2 O fl
m 4 1.0
c; pr '
co Lg /
O 2 o 8 /
0 8 16 24 32 40 -50 -25 o 25 50 75 100 125 150
0g - TotaIGate Charge(nC)
Tu - Junction Temperature CC)
Document Number: 70802
S-31062-Rev. F, 26-May-03
www.vishay.com
Si4810DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
a 0.08
tt 10 7;
"'iz,' T: = 150°C 3
5 _-l-l 0.06 ID = 9.0 A
c?) 1 ' (h04
(n Tz,"
" 0.02 K
0.1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
V30 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Reverse Current (Schottky) Single Pulse Power
o 0.1 "
a.) ' 40
u) tL N
ttc 0.01 N
f 20 l
"ss,,,
0.0001 0
0 25 50 75 100 125 150 0.01 0.10 1.00 10.00
To - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
it' Duty Cycle = 0.5
ifj E Notes:
tt ' J,,,-,
8 a 0.1 DM
M ,5 k
E -lt-I t2 t
a 1. Duty Cycle, D = T;
2. Per Unit Base = RthJA = 70”CNV
. 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 30
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70802
2.4 S-31062-Rev. F, 26-May-03
ic,fiF,Ai, Si4810DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky)
Duty Cycle = 0.5
Notes:
_.L: _
l, Duty Cycle, D = T,
2. Per Unit Base = Rth0A = 80°C/W
Normalized Effective Transient
Thermal Impedance
3. TJM - TA = PDMZmJA“)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 30
Square Wave Pulse Duration (sec)
Document Number: 70802 www.vishay.com
S-31062-Rev. F, 26-May-03 2-5
:
www.loq.com
.
