SI4808DY ,Dual N-Channel 30-V (D-S) MOSFETS-03951—Rev. B, 26-May-032-1Si4808DYVishay SiliconixMOSFET SPECIFICATIONS (T = 25C UNLESS OTHERWIS ..
SI4808DY ,Dual N-Channel 30-V (D-S) MOSFETS-03951—Rev. B, 26-May-032-3V - Gate-to-Source Voltage (V)r - On-Resistance ( ) I - Drain Curre ..
SI4808DY ,Dual N-Channel 30-V (D-S) MOSFETABSOLUTE MAXIMUM RATINGS (T = 25C UNLESS OTHERWISE NOTED)AParameter Symbol 10 secs Steady State Un ..
SI4808DY-T1 , Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4808DY-T1 , Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4810BDY ,N-Channel 30-V (D-S) MOSFET with Schottky DiodeS-31063—Rev. A, 26-May-031Si4810BDYNew ProductVishay SiliconixMOSFET + SCHOTTKY SPECIFICATIONS (T = ..
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SI4808DY
Dual N-Channel 30-V (D-S) MOSFET
“5% Si4808DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A) US
0.022@VGS=10V 7.5 it (ol
30 0.030 @ VGS = 4.5 v 6.5 00
SCHOTTKY PRODUCT SUMMARY
Vso (V) 1JI'
VDs (V) Diode Forward Voltage IF (A)
30 0.50 V @ 1.0 A 2.0
D1 D1 D2 D2
G1 I G2 IE} lisa Schottky Diode
Top IMw o
Ordering Information: Si4808DY s, S2
Si4808DY-T1 (with Tape and Reel)
N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30
Gate-Source Voltage VGS i20 V
TA = 25°C 7.5 5.7
Continuous Drain Current (T J = 150°C)a TA = 70°C ID 6.0 4.6
Pulsed Drain Current IBM 30 A
Continuous Source Current (Diode Conduction)" ls 1.7 0.9
. . . . TA=25°C 2.0 1.1
Maximum Power Dissipation" TA = 70"C PD 1.3 0.7 W
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
MOSFET Schottky
Parameter Symbol Typ Max Typ Max Unit
t s 10 sec 52 62.5 53 62.5
Ma im md nction-to-Ambienta R
XI u u I I Steady-State th0A 93 110 93 110 com
Maximum Junction-to-Foot (Drain) Steady-State Rthoc 35 4O 35 40
a. Surface Mounted on 1" x l" FR4 Board.
DocumentNumber: 71157 www.vishay.com
S-03951-Rev. B, 26-May-03 2-1
Si4808DY \"SEHAY'
Vishay Siliconix
MOSFET SPECIFICATIONS ITo = 25°C UNLESS OTHERWISE NOTED).
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage Vegan) VDs = N/ss, b = 250 11A 0.8 V
Gate-Body Leakage less VDS = 0 V, VGS = $20 V :t 100 nA
l/DS = 24 v, VGS = 0 v Ch-l 1
Ch-2 100
Zero Gate Voltage Drain Current bss Ch-l 15 11A
VDS=24 V,VGS=0V, TJ=85°C Ch-2 2000
On-State Drain Currentb IBM) VDS = 5 V, VGS = 10 V 20 A
V63: 10V, ID: 7.5A 0.018 0.022
Drain-Source On-State Resistanceb rDs(0n) - - Q
VGS - 4.5 V, ID - 6.5 A 0.024 0.030
Forward Transconductanceb gfs Vos = 15 V, ID = 7.5 A 22 S
Ch-1 0.8 1.2
Diode Forward Voltageb VSD ls = 1 A, VGS = o V cm 0.47 0.5 v
Dynamica
Total Gate Charge % 13 20
Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 7.5 A 2 n0
Gate-Drain Charge di 2.7
Gate Resistance Rg 0.5 3.2 Q
Turn-On Delay Time tdmn) 8 16
Rise Time tr 1/rxo=15V, RL=159 10 20
Turn-Off Delay Time td(off) ID _ 1 A, VGEN = 10 V, Rs = 6 Q 21 40
Fall Time If 10 20 ns
Ch-1 40 80
Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 A/us Ch-2 32 70
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width s 300 ps. duty cycle 3 2%.
SCHOTTKY SPECIFICATIONS tTa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
IF = 1.0 A 0.47 0.50
Forward Voltage Drop VF IF = 1.0 A, TJ = 125°C 0.36 0.42 V
v, = 30 V 0.004 0.100
Maximum Reverse Leakage Current Irm v, = 30 V, TJ = 100°C 0.7 10 mA
V,-- -30V,TJ=125°C 3.0 20
Junction Capacitance CT v, = 10 V 50 pF
www.vishay.com Document Number: 71157
2-2 S-03951-Rev. B, 26-May-03
VISHAY
Si4808DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
MOSFET
Output Characteristics
_ --'''""
VGS=10thru4V we''''"" 3V
Caf /"
E 12 f/
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
f...', 0.032
g 0.024 VGS 4.5V -
8 VGS = 10 V
' 0.016
O 4 8 12 16 20
ID - Drain Current (A)
Gate Charge
VDS = 15 V "
3 ID = 7.5 A sp''
J,' t,,,/''r
itsij' 4
0 3 6 9 12 15
Q9 - TotalGate Charge(nC)
rosmn) - On-Resistance(§2)
| D - Drain Current (A)
C - Capacitance (pF)
(Normalized)
Transfer Characteristics
Tc=125''C /
4 1 y,
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Capacitance
1000 l
Ns,,,,,.
" Ciss
400 l 't
l "ss. Coss
200 Crss
ss,,......".'..,
0 6 12 18 24 30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 7.5 A
1.4 /'''
IQ ww'''''''''
0.8 ,,,,,e"'"
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Document Number: 71157
S-03951-Rev. B, 26-May-03
www.vishay.com
Si4808DY VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) MOSFET
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.04
A b = 7.5 A
,ii..':.] F; 0.03
"iz,' t'c,i, N,
o 8 'ss,
g 5 0.02
- .3 0.01
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 50
0.2 40
ID = 250 uA
ii-,? -0.0
hi "ssc g
E -0.2 t,
> \ t \
g? a 20
> -0.4 'ss, l
-0.6 N. 10 N
"N, “~.
-0.8 0
-50 -25 0 25 50 75 100 125 150 10-3 10-2 url 1 10 100 600
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
g Duty Cycle = 0.5
$2 0.2
if'; g Notes:
[ti.', g -,,C,
8 o 0.1 DM
& .5 k
F, i 12 t
z 1. Duty Cycle, D = T;
2. Per Unit Base = Rth0A = 93°CNV
. 3. To, - TA = PDMZmJA")
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71157
S-03951-Rev. B, 26-May-03
“5% Si4808DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) MOSFET
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) SGHOTTKY
20 Reverse Current vs. Junction Temperature Forward Voltage Drop
T: = 150°
g... 1 iii:,
Bi 0.01 I
0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5
TJ - Temperature (°C) VF - Forward Voltage Drop (V)
Capacitance
0 'css::::::
40 a.--.-,
0 6 12 18 24 30
VDS - Drain-to-Source Voltage (V)
Document Number: 71157 www.vishay.com
S-03951-Rev. B, 26-May-03 2-5
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