SI4804DY ,Dual N-Channel 30-V (D-S) MOSFETSi4804DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYV (V) r () I (A)DS DS(on) D ..
SI4804DY-T1 ,Dual N-Channel 30-V (D-S) MOSFETSi4804DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYV (V) r () I (A)DS DS(on) D ..
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SI4808DY ,Dual N-Channel 30-V (D-S) MOSFETABSOLUTE MAXIMUM RATINGS (T = 25C UNLESS OTHERWISE NOTED)AParameter Symbol 10 secs Steady State Un ..
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SI4804DY
Dual N-Channel 30-V (D-S) MOSFET
VISHAY Si4804DY
Vishay Siliconix
Dual N-Channel 3o-v (D-S) MOSFET
PRODUCT SUMMARY “Q
VDs (V) rosm (Q) '0 (A) 'gt'E'iiist-
0.022 © VGS = 10 v 7.5 't tt et
0.030 © Ves = 4.5 v 6.5
D1 D1 D2 D2
G.o_| G.o_|
Top 1Aew
Ordering Information: Si4804DY
Si4804DY-T1 (with Tape and Reel)
N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30
Gate-Source Voltage VGS 120
TA = 25°C 7.5 5.7
Continuous Drain Current (T J = 150°C)8 ID
TA = 70°C 6.0 4.6 A
Pulsed Drain Current IBM 20
Continuous Source Current (Diode Conduction)a ls 1.7 0.9 A
TA = 25°C 2.0 1 .1
Maximum Power Dissipationa PD W
TA = 70''C 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 52 62.5
Maximum Junction-to-Ambienta RNA
Steady State 93 110 ''C/W
Maximum Junction-to-Foot (Drain) Steady State Rwy: 35 40
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71088 www.vishay.com
S-31989-F%v. D, 13-Oct-03 1
Vishay Siliconix
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGSM VDS = bes, ID = 250 MA 0.8 V
Gate-Body Leakage less VDS = 0 V, Vas = 120 V d: 100 nA
VDs--30V,VGs--0V 1
Zero Gate Voltage Drain Current loss WA
1/Ds--30VVGs--0V,Tv--550C 5
On-State Drain Currenta |D(on) I/os 2 5 V, VGS = 10 V 20 A
VGS =10 v, ID = 7.5A 0.018 0.022
Drain-Source On-State Resistances rDS(on) Q
VGS = 4.5 V, ID = 6.5 A 0.024 0.030
Forward Transconductancea gfs Vos = 15 V, ID = 7.5 A 22 S
Diode Forward Voltagea VSD Is = 1.7 A, VGS = 0 V 0.8 1.2
Dynamicb
Total Gate Charge Q9 13 20
Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 7.5 A 2 nC
Gate-Drain Charge di 2.7
Gate Resistance HG 0.5 1.9 4 Q
Turn-On Delay Time td(on) 8 16
Rise Time tr VDD =15 V, RL =15 g 10 20
Turn-Off Delay Time td(off) ID _ 1 A, VGEN = 10 V, RG = 6 Q 21 40 ns
Fall Time tf 10 20
Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 Alps 40 80
a. Pulse test; pulse width s 300 ps, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
--""'"
VGS=10thru4V ae'''''''" 3V
16 _ / 16
E 12 I E 12
S 8 S 8
I I T0 = 125°C
- 4 - 4 o y
2 v 25 C \1 I
Cjiti, -551
0 0 ' _
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71088
2 S-31989-Rev. D, 13-Oct-03
"ii=iir
VISHAY
Si4804DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
9 0.032
8 0.024 I/ss 4.5 V 7
6 VGS = 10 V
I 0.016
0 4 B 12 16 20
ID - Drain Current(A)
Gate Charge
VDS = 15 V /"
E ID = 7.5 A sp''
9 /''"
sl-', 6 /
0 3 6 9 12 15
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
I S — Source Current (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
roam) - On-Resistance (9)
(Normalized)
rDS(0n) — On-Resistance (Q)
Capacitance
'ss, Ciss
"ss.. Coss
6 12 18 24 30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
Vss--10V
|D=7.5A /
o,,,,,,,,?'"
-25 0 25 50 75 100 125 150
Tu - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
ID = 7.5A
2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Document Number: 71088
S-31989-F%v. D, 13-Oct-03
www.vishay.com
Si4804DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4 50
0.2 40
ID = 250 “A
Z -0.0
o A 30
E 's. S ,
E -0.2 '
> "N, g
'gc.'" o. 20
il'" k
> -0.4 'ss, l
-0 6 N. N
"N, ss,,
-0.8 0
-50 -25 0 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600
To - Temperature (''C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1. Duty Cycle, D = T1
2. Per Unit Base = RNA = 93°C/W
3. Torg - TA = PDMZthJAm
4. Surface Mounted
10 100 600
li' Duty Cycle = 0.5
E a 0.1
Single Pulse
1041 10-3 10-2 IO-l 1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 10-1
Square Wave Pulse Duration (sec)
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Document Number: 71088
S-31989-Rev. D, 13-Oct-03
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