SI4542DY ,N/P-Channel 30-V (D-S) Pair FaxBack 408-970-5600S-56944—Rev. D, 23-Nov-982-3V – Gate-to-Source Voltage (V) r – On-Resistan ..
SI4542DY ,N/P-Channel 30-V (D-S) Pair FaxBack 408-970-5600S-56944—Rev. D, 23-Nov-982-1Si4542DYVishay Siliconix
SI4542DY
N/P-Channel 30-V (D-S) Pair
VISHAY
Si4542DY
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
Vros (V) rDS(on) (Q) ID (A)
0.025@VGS=10V $6.9
N-Channel 30
0.035@VGS=4.5V 21:5.8
0.032@VGs=-10V $6.1
P-Channel -30
0-045@VGS=_4-5V 21:5.1
Top View
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage Vos 30 -30 V
Gate-Source Voltage VGS i 20 i 20
TA=25°C $6.9 $6.1
Continuous Drain Current (TJ = 150°C)a ID
TA-- 70°C i5,5 i4.9
Pulsed Drain Current IBM 1 40 l 40
Continuous Source Current (Diode Conduction)" ls 1.7 -1.7
TA = 25°C 2.0
Maximum Power Dissipation" Po W
TA = 70°C 1.3
Operating Junction and Storage Temperature Range To, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol N- or P-Channel Unit
Maximum Junction-to-Ambienta RmJA 62.5 °CNV
a. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 70666
S-56944-Rev. D, 23-Nov-98
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Si4542DY
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SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
VDS = Was, ID = 250 MA N-Ch 1.0
Gate Threshold Voltage l/SSM) V
VDS = Kss, ID = -250 “A P-Ch -1.0
N-Ch d: 100
Gate-Body Leakage IGSS VDS = 0 V, VGS = 1:20 V nA
P-Ch d: 100
Vos = 30 V, VGS = 0 V N-Ch 1
VDs = -30 V, VGS = 0 V P-Ch -1
Zero Gate Voltage Drain Current IDSS WA
Vos = 30 V, VGS = 0 V, TJ = 55°C N-Ch 25
Vos = -30 V, VGS = O V, T: = 55°C P-Ch -25
VDS 2 5 V, VGs = 10 V N-Ch 20
On-State Drain Currenta ID(on) A
VDS s -5 V, VGS = -1 0 V P-Ch -20
Vss = 10 V, ID = 6.9 A N-Ch 0.020 0.025
. . VGS = -10 V, ID = -6.1 A P-Ch 0.026 0.032
Drain-Source On-State Resistancea ’DS(on) Q
VGS = 4.5 V, ID = 5.8 A N-Ch 0.026 0.035
Vss = -4.5 V, ID = -5.1 A P-Ch 0.036 0.045
vDS = 15 V, ID = 6.9 A N-Ch 25
Forward Transconductancea gts S
VDs=-15V,lD=-61A P-Ch 16
IS=1.7A,VGS=OV N-Ch 1.2
Diode Forward Voltagea VSD V
ls = -1.7 A, VGS = 0 V P-Ch -1.2
Dynamic''
N-Ch 30 50
Total Gate Charge 09
N-Channel P-Ch 32 50
VDS= 15V, Vss=10V, |D=6.9A N-Ch 7.5
Gate-Source Charge Qgs nC
P-Channel P-Ch 7.0
VDs=-15V, VGs=-10V,lD=-61A N-Ch 3.5
Gate-Drain Charge di
P-Ch 5.0
N-Ch 12 20
Turn-On Delay Time td(on)
P-Ch 10 20
N-Channel
N-Ch 10 20
Rise Time tr VDD =15 V, RL =10 Q
ko-sl/tN/GEN-lol/HRS--) P-Ch 10 20
Turn Off Delay Time t P-Channel N-Ch 60 90 ns
- d = - =
(oft) - VDD 15V,RL 10 '_2, P-Ch 55 80
ID = -1A,VGEN---10V, Rs=60
N-Ch 15 30
Fall Time tf
P-Ch 25 40
Source-Drain t IF = 1.7 A, di/dt = 100 N03 N-Ch 50 90
Reverse Recovery Time rr IF = -1.7 A, di/dt = 100 N05 P-Ch 50 90
a. Pulse test; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
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2-2 S-56944-Rev. D, 23-Nov-98
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Si4542DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
///‘ 1 l l V‘
I GS" O,9,8,7,6,5
24 // "
| D — Dram Current( )
| D — Dram Current( )
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
A 0.04
ii; ik'
g 0 03 VGS = 4.5 v ' ii"
Ef . w,..-'''''''" g
e ii')
0 0.02 Q
5, VGS =10 v o
f? 0.01
0 10 20 30 40
ID - Drain Current(A)
Gate Charge
Vros = 15 v
ID = 6.9 A
> 6 C G"
E :3 h'
J) 2 g
g 4 é Ji
i'' / E
(l) 2 g
0 6 12 18 24 30
Q9 - Total Gate Charge(nC)
N-CHANNEL
Transfer Characteristics
TC = 125°C ,
I \/ -55"C
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Capacitance
( Coss
1sss,,_.,
o 5 IO 15 20 25 30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
Vgs=10V
|D=6.9A
W'''""
o.,,,,-''''''''
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
Document Number: 70666
S-56944-Rev. D, 23-Nov-98
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Si4542DY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) N-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
A 0.08
E T J = 150°C I')-',. 0.06
08) 6 0.04
m 3 b - 6.9 A
_ h' 0.02
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 30
0.2 's 25
ID = 250 “A
ti,e', 42 "ss, F..i 1
g "ts a 15
ie, -0.4 \ a Tc=25°C
'iii'" "s, tL 10 Single Pulse
> -0.6 , \
"ss, N,,
Ah8 ‘n
-1.0 0
-50 -25 0 25 50 75 100 125 150 0.01 0.10 1.00 10.00
TJ - Temperature CC) Tlme (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
- Duty Cycle = 0.5
5 ' 0.2
t il' Notes:
ui-t CL T
g E PDM
t To 0.1
Lu E 1
to ID " _
(il "E i t2 t1
g 1. Duty Cycle, D = r,
2° 2. Per Unit Base = RNA = 625'CAN
. 3. TJM - TA = PDMzthJAm
Single Pulse 4. Surface Mounted
10-4 1 (r3 1 0-2 IO-l 1
Square Wave Pulse Duration (sec)
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Document Number: 70666
S-56944-Rev. D, 23-Nov-98
VISHAY Si4542DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
Output Characteristics Transfer Characteristics
40 I l 40 I l
//VGS = 10 thru 5 V TC = -55 l /
32 f 32 25°C -,-r-,
Ci:: // 4V ii.:: 125°C
E 24 I E 24
I' (/ 9
Cis- 16 z/ E 16
8 '( 3 V - 8
2, 1 v
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.10 3200
A 0.08 -..-,
Cl 2400
g 0.06 'l'
8 15 1600
8 0.04 8
V 800 C
E) 0.02 'ss, oss
0 8 16 24 32 4O 0 6 12 18 24 30
ID - Drain Current(A) Vos - Drain-to-Source Voltage(V)
Gate Charge On-Resistance vs. Junction Temperature
10 /" 1.75
Vros=15V VG3=10V
Ci? 8-ID--6.1A / A 1.50-ID--6.1A ’
a) Ct /
Jf,? I 8 w,,,.,,,,-''''''''
6 C A 1.25
S? 4 C 0 1.00
' O Fir...
l',-',. ' '
('9 o// sf.?, r,,-.-''"'
u, 2 fll 0.75 /
0 7 14 21 28 35 -50 -25 O 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
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S-56944-Rev. D, 23-Nov-98 2-5
Si4542DY VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
40 J20
A 0.16
eg T J = 150°C 7;
g 10 g 0.12
'i', i'!' ID = 6.1 A
g 8 0.08
w ss?..
- ll 0.04
o 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 IO
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.8 30 l
0 6 ,,,,/' 25 "
I = 250
g 0.4 D “A // 20
é w,,,,,,,''''''' t N
g 0.2 lg 15
:2: w,,,.''''" CLO 't
0.0 10
"--'' N,
-0 2 5 _
/ 's...,.
-0.4 0
-50 -25 0 25 50 75 100 125 150 0.01 0.10 1.00 10.00
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
tn a.)
E 8 0.2
t (is,' Notes:
é a -T-
8 g 0.1 PDM
it g 0.1 k
a) w " _
55 i t2 1
E l. Duty Cycle, D = T
2 2. Per Unit Base = RNA = 62.5°CNV
. 3. TJM - TA = PDMZIhJA(‘)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 IO-I 1 10 30
Square Wave Pulse Duration (sec)
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