SI4539ADY ,Complementary MOSFET Half-Bridge (N- and P-Channel)S-03951—Rev. B, 26-May-032-3V - Gate-to-Source Voltage (V) r - On-Resistance ( ) I - Drain Curr ..
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SI4539ADY
Complementary MOSFET Half-Bridge (N- and P-Channel)
VISHAY
Si4539ADY
Vishay Siliconix
N- and P-Channel 30-v (D-S) MOSFET
PRODUCT SUMMARY
Vos (V) rDS(on) (Q) ID (A)
O.036@VGS=10V 5.9
N-Channel 30
0.053 @ VGS = 4.5 V 4.9
0.053@Vss= -10V -4.9
P-Channel -30
0.090 @ VGS = -4.5 V -3.7
Top Jew
Ordering Information: Si4539ADY s,
si4539ADY-T1 (with Tape and Reel)
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
N-Channel P-Channel
Parameter Symbol 10 secs Steady State 10 secs Steady State Unit
Drain-Source Voltage Vos 30 -30 V
Gate-Source Voltage VGS 21:20 ck 20
TA=25°C 5.9 4.4 -4.9 -3.7
Continuous Drain Current (T J = 150°C)a ID
TA=70°C 4.7 3.6 -3.9 -2.9
Pulsed Drain Current IBM 30
Continuous Source Current (Diode Conduction)" Is 1.7 0.9 -1.7 -0.9
TA=25°C 2.0 1.1 2 1.1
Maximum Power Dissipationa PD W
TA=70°C 1.3 0.7 1.3 0.7
Operating Junction and Storage Temperature Range T J, Tsig -55 to 150 I
THERMAL RESISTANCE RATINGS
N-Channel P-Channel
Parameter Symbol Typ Max Typ Max Unit
t s 10 sec 50 62.5 52 62.5
M . . - -A . a R
ax1mum Junction to mblent Steady State WA 90 110 90 110 “CNV
Maximum Junction-to-Foot (Drain) Steady State Rmor: 32 40 32 40
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71131 www.vishay.com
S-03951-Rev. B, 26-May-03 2-1
Si4539ADY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
VDS = Veg, ID = 250 11A N-Ch 1.0
Gate Threshold Voltage VGS(th) V
VDS = V65, ID = -250 WA P-Ch -1.0
VDS=0V,VGs=i20V N-Ch i100
Gate-Body Leakage 'GSS v 0 v v i20 v P Ch 1100 nA
DS = , GS = -
I/rss = 24 v, N/ss = o v N-Ch 1
VDS = -24 V, VGS = 0 V P-Ch -1
Zero Gate Voltage Drain Current loss o 0A
VDs=24N/,Vss=0V,TJ--55oC N-Ch 5
v.33: -24V,VGs=0V,To=550C P-Ch -5
VDS Z 5 V, VGS = 10 V N-Ch 30
On-State Drain Current" Icon) A
v03 3 -5V,Vss=-10V P-Ch -30
V63 =10 V, ID = 5.9 A N-Ch 0.032 0.036
N/ss = -10 v. ID = -4.9 A P-Ch 0.043 0.053
Drain-Source On-State Resistancea rDs(on) V 4 5 V I 4 9 A N Ch 0 042 0 053 C2
GS = . t D = . - . .
VGS = -4.5 V, ID = -3.7 A P-Ch 0.075 0.090
VDs=15V,ID=5.9A N-Ch 15
Forward Transconductancea gfs V 15 V I 4 9 A P Ch 9 s
DS = - , D = - . -
ls = 1.7 A, Vtss = 0 v N-Ch 0.80 1.2
Diode Forward Voltagea VSD IS = -l 7 A N/ss = 0 V P-Ch -0 80 _1 2 V
Dynamicb
N-Ch 13 20
Total Gate Charge 09 N-Channel P Ch 1 5 25
1/rs=15VVss=10V,ln=5.9A N-Ch 2.3
Gate-Source Charge Qgs P-Channel P Ch 4 nC
Vrss=-15V,Vss=-10V,lo=-4.9A -
N-Ch 2
Gate-Drain Charge di P Ch 2 O
N-Ch 0.5 2.2
Gate Resistance Rg P Ch 5 12 6 Q
N-Ch 6 12
Turn-On Delay TIme tum) P Ch 7 15
N-Channel N-Ch 14 25
RiseTime t, VDD=15V,RL=15Q
|DE1A,VGEN=1OV.RG=69 P-Ch 10 20
P-Channel N-Ch 3O 60
Turn-Off Delay Time td(oit) VDD = -15 V, RL = 15 Q P-Ch 40 80 ns
ID E -1A,VGEN= -1OV, RG =69
N-Ch 5 10
Fall Time If P Ch 20 40
Source-Drain t IF = 1.7 A, di/dt = 100 A/ws N-Ch 30 60
Reverse Recovery Time rr IF = -1.7 A, di/dt = 100 N115 P-Ch 30 60
a. Pulsetest; pulse width s 300 ps. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com Document Number: 71131
2-2 S-03951-Rev. B, 26-May-03
VISHAY
Si4539ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
30 1 1 1 1
l veg =10thru 5 v
24 I 4 V
Ci.] /
E w'''''
Cl 12 l
0.0 0.5 1_0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage(V)
On-Resistance vs. Drain Current
8 0.06 w.,,,.,,.,,""'
g VGS It!.,..,,...-----''''
a; -------'"""
6 0.04 Ves=10V -
f 0.02
0 6 12 18 24 30
ID - Drain Current(A)
Gate Charge
VDS =15V
ID = 5.9A
6 ,,,,/'''''
VGs - Gate-to-Source Voltage (V)
0 3 6 9 12 15
Q9 - TotalGate Charge(nC)
I D - Drain Current(A)
C - Capacitance (pF)
rosmn) - On-Resistance(§2)
(Normalized)
NCHANNEL
Transfer Characteristics
Tc = -55''C
24 25°C "s V
O 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Capacitance
800 _ Clss
200 "mt-.....
0 6 12 18 24 30
Vos - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
1l5 _ _
VG3=10V /
ID = 5.9A
1.4 //
s,,,,,,,'''''''
0.8 l/
-50 -25 0 25 50 75 100 125 150
T: - Junction Temperature CC)
Document Number: 71131
S-03951-Rev. B, 26-May-03
www.vishay.com
Si4539ADY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) NCHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
30 0.08
TJ=150°C ID-- 5.9A
s. "if 0.06
E 10 8 \
tD tyt 0.04
L' I _
- m 0.02
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 2 4 6 8 10
V80 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 50
0.2 "ss, 40
ID = 250 pA
E -0.0
o g 30
.3 N. f
m -0.2 ID
> "N g N
"ig" n. 20 N
> 0.4 N
-0.6 k \
-0.8 0
-50 -25 0 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
"'fz,' Duty Cycle = 0.5
I' 'i, 0.2
g g Notes:
5 g -T-
B a 0.1 PM
g .5 k
E t1 _
S 1 t2 tl
Z l, Duty Cycle, D = T,
2. Per Unit Base = RmJA = 90°CNV
. 3. TJM - TA = PoMirthoA(t)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71131
2.4 S-03951-Rev. B, 26-May-03
ic,fiF,Ai, Si4539ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) NCHANNEL
Normalized Thermal Transient Impedance, Junction-to-Foot
E Duty Cycle = 0.5
S' E 0.2
ii'1yii'
8 a, 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) PCHANNEL
Output Characteristics Transfer Characteristics
30 1 1 1 I /1 30 1 1
Tc = -55°C
VGS=1Othru7V // 6V 1
24 _ 24 25°C
(r/f(//'' 5V \V
'ii:", s..."''" "ig' /
g 18 ,/ "t' 18
t // l/ t 125°C
O v/ft,' O
E 12 / s 12
o /// 4V Cl
- 6 /’// - 6
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 6
VDs - Drain-to-Source Voltage(V) VGS - Gate-to-Source Voltage(V)
On-Resistance vs. Drain Current Capacitance
0.20 1500
9, I A 1200
'k' 0.15 3 Ciss
£5 8 --,
.tt2 '
g ,g. 900
n; N/ss = 4.5 v 8
C 0.10 I o.
' w.,---''''''''" ' 600
J) VGS = 10 V
f 0.05 --- y Cass
"s-.....
0.00 0
0 6 12 18 24 30 0 6 12 18 24 30
ID - Drain Current(A) Vos - Drain-to-Source Voltage(V)
DocumentNumber: 71131 www.vishay.com
S-03951-Rev. B, 26-May-03 2-5
Si4539ADY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) PCHANNEL
Gate Charge On-Resistance vs. Junction Temperature
10 l 1.6 _ _
S VDS=15V VGS=10V
V ID=4.9A A ID=4.9A /
8, 8 9‘, 1.4
f?, g A
's 6 g = 1.2 1
8 /" 0.: E w'''"
é y'' 8 o
8 4 _r e 1.0
> 2 0.8
0 4 8 12 16 2O -50 -25 O 25 50 75 100 125 150
O9 - Total Gate Charge (nC) Tu - Junction Temperature (''C)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
30 0.40
T = 150°C _
Ct" J Cir 0.30
' IO tD
'g ji'; 0.25 ID = 4.9 A
a.) (I
g r': 0.20
U) ' 0.15
- m 0.10
0.05 -
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
Vso - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.8 50
0.6 " 40
ID = 250 WA
3 0 4 /
o . pr
g g 30
N 0.2 1 E \
"i-c'] 'pe'''" E 20
-0.2 "N
-O.4 0
-50 -25 0 25 50 75 100 125 150 10-3 10-2 IO-l 1 10 100 600
TJ - Temperature CC) Time (sec)
www.vishay.com Document Number: 71131
2-6 S-03951-Rev. B, 26-May-03
ic,fiF,Ai, Si4539ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) PCHANNEL
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
0.1 -T-
__L: _
1. Duty Cycle, D = -
2. Per Unit Base = RthJA = 90“CNV
Thermal Impedance
Normalized Efiective Transient
3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 71131 www.vishay.com
S-03951-Rev. B, 26-May-03 2-7
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