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SI4501DY
Complementary MOSFET Half-Bridge (N- and P-Channel)
VISHAY
Si4501DY
New Product
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
VDs (V) l'DS(on) (Q) ID (A)
0.018@VGs=10V 19
N-Channel 30
0.027 @ VGS = 4.5 v l 7.4
0.042 @ Vcs = -4.5 v +6.2
P-Channel -8
0.060 @ VGS = -2.5 v i 5.2
Top Jew
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage VDS 30 -8
Gate-Source Voltage Veg i 20 i 8
b TA = 25°C d: 9 d: 6.2
Contin o s Drain C rrent T = 150°C a, I
Inu u l u (To ) TA=7O°C D $7.4 i5.0
Pulsed Drain Current IBM cl: 30 l 20
Continuous Source Current (Diode Conduction? b ls 1.7 -1.7
TA = 25°C 2.5
Maximum Power Dissipation' b PD W
TA = 70°C 1.6
Operating Junction and Storage Temperature Range Tu, Tsig -55 to 150 I
THERMAL RESISTANCE RATINGS
N-Channel P- Channel
Parameter Symbol Typ Max Typ Max Unit
t s 10 sec 38 50 40 50
M . . _ -A . a R
ax1mum Junction to mblent Steady-State WA 73 95 73 95 ''CA/V
Maximum Junction-to-Foot Steady-State Rthc 17 22 20 26
a. Surface Mounted on FR4 Board.
b. t s 10 sec
Document Number: 70934 www.vishay.com
S-61812-Rev. B, 19-Jul-99
Si4501DY
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
VDS = VGS, ID = 250 _uA N-Ch 0.8
Gate Threshold Voltage VGS(th) V
Vros = Veg, ID = -250 “A P-Ch -0.45
VDs=0V,VGs=ce20V N-Ch i100
Gate-Body Leakage less nA
Vros--0V,N/Gs=ce8V P-Ch 1100
VDS = 24 V, VGS = 0 V N-Ch 1
VDS = -6.4 V, VGS = 0 V P-Ch -1
Zero Gate Voltage Drain Current loss pA
VDS=24 \/,VGS=O\/,TJ=55°C N-Ch 5
V03: -6.4V,VGS=OV,TJ=55°C P-Ch -5
VDS = 5 V, VGS = 10 V N-Ch 30
On-State Drain Currentb Iron) A
Vos = -5 V, VGS = -4.5 V P-Ch -20
V63: 10V, lo-- 9A N-Ch 0.015 0.018
VGS = -4.5 V, ID = -6.2 A P-Ch 0.034 0.042
Drain-Source On-State Resistanceb roam) Q
VGS = 4.5 V, ID = 7.4 A N-Ch 0.022 0.027
VGS = -2.5 V, ID = -5.2 A P-Ch 0.048 0.060
VDS=15V,ID=9A N-Ch 20
Forward Transconduc1anceb gfs S
VDs=-15V,ID=-6.2A P-Ch 14
Is=1.7A,VGs= 0V N-Ch 0.71 1.1
Diode Forward Voltageb VSD V
IS: -1.7A,VGs=0V P-Ch -0.70 -1.1
Dynamica
N-Ch 4.5 20
Total Gate Charge 09
P-Ch 15 25
N-Channel
Vos-- 15V, VGS= 5V,ID= 9A N-Ch 3.3
Gate-Source Charge Qgs nC
P-Channel P-Ch 3.0
V =-4V, V =-5V,l =-6.2A
. DS GS D N-Ch 6.6
Gate-Drain Charge di
P-Ch 2.0
N-Ch 13 20
Turn-On Dela Tlme t
Y d(on) P-Ch 20 40
N-Channel N Ch 9 18
Rise Time tr I = "itoie, l ')e 31; l
D-- :GEN‘ 0 , G--6Q P-Ch 50 100
T Off D l T td P-Channel N-Ch 35 50
urn- e ay me (off) VDD = -4 V, h = 4 Q ns
ID a -1A,VGEN = -4.5 v, Rs = 6 Q P-Ch 110 220
N-Ch 17 30
Fall Time 1f
P-Ch 60 120
N-Ch 35 70
Source-Drain Reverse Recovery Tlme trr IF = 1.7 A, di/dt = 100 Alps
P-Ch 60 100
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width s 300 05. duty cycle 5 2%.
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DocumentNumber: 70934
S-61812-Rev. B, 19-Jul-99
“5% Si4501DY
New Product Vishay Silittonix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) NCHANNEL
Output Characteristics Transfer Characteristics
50 1 l 50
" VGS=1Othru4V
'ds. C4
E 30 E 30
E .E A
S 2 E 2
o o -- 3V o o I
I ----""" I Tc=125°C f')
_ 10 _ 10 f/ I
25.0 Z" - ©
"w (Y 55 c
0 0 1 'lt"d',2ge? 1 1
0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDs - Drain-to-Source Voltage(V) I/ss - Gate-to-Source Voltage(V)
On-Resistance vs. Drain Current Capacitance
0.05 1800
A 0.04 fi?
g g 1200
g 0 03 (Is'.
.e v = 4.5 V
8 GS , 900
u; _---- o
o 0.02 7 I
L VGS - 10 V O 600
f 0.01 300
0.00 0
O 6 12 18 24 30 O 6 12 18 24 30
ID - Drain Current(A) VDS - Drain-to-Source Voltage(V)
Gate Charge On-Resistance vs. Junction Temperature
10 _ 1.8 _ _
VDS=15V Ves=10V
S lrr=11A A 1_5_|D=11A I
CD 8 V "
.9. f a:
B ie' 1.4 /
> g E" "
d.) w o
g 6 a u 'P'''
ID E 1 2 "
O tyt .
w " ' E
is. / 6 i; /
(D "ie,'" o..,.-'''"
'm if o 8 A
o / " /
0 5 10 15 20 25 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
DocumentNumber: 70934 www.vishay.com
S-61812-Rev. B, 19-Jul-99 2-3
Si4501DY
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
NCHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
50 0.10
A a 0.08 I - 4 5 A
f? T: = 150°C 2; D .
'rs 10 7, 0.06
's c's
fn' 0 0.04
tn ' N,,,
- UV) '
5' 0.02
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
V30 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.6 50
0.4 it
"s, 40
0.2 ' ID = 250 HA l
g -0.0 E 30
E \ t N
> -0.2 o
e 0 's I N
8 -0.4 "
> Iss,
-0.e 'ss, 10 s,
-0.8 "ss..,
-1.0 0
-50 -25 o 25 50 75 100 125 150 0.01 0.1 1 10 30
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
5 Duty Cycle = 0.5
2?. 0.2
l? a, 0.1 PDM
E ff l
g -lt-I t2 tl
Z l, Duty Cycle, D = T
2. Per UnitBase = Rth0A = 73°CNV
. 3. TJM - TA = PDMZmoA(t)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1
Square Wave Pulse Duration (sec)
100 600
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DocumentNumber: 70934
S-61812-Rev. B, 19-Jul-99
VISHAY
New Product
Si4501DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
NCHANNEL
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Single Pulslell
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) PCHANNEL
Output Characteristics
Transfer Characteristics
20 _ 20 l /
2.5 V TC = -55°C y
16 l l 16 1
VGS = 5thru 3 V 25°C \7/
ig" g I
.5 12 2 V - 12 7
§ E ( 125°C
y e'''"" y
E / 1.8 V E
g 8 g 8
a 1.5 V co
_ 4 - 4
1 v ",gf
0 0 44
O 1 2 3 4 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Vros - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.20 l 2500
Vcs = 1.8 V
A Ciss
Cl 0.16 2000 _
oij. I 8
.9 0.12 c 1500
rr. 8 't
, 0.08 ol 0 1000
" sz = 2.5 v / ' C
lic," o,--"'" -.---rr" O DSS
if _....--. VGS = 4.5 V
" 0.04 500
0.00 0
0 4 8 12 16 20 0 2 4 6 8
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Document Number: 70934 www.vishay.com
S-61812-Rev. B, 19-Jul-99
Si4501DY
VISHAY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) PCHANNEL
Gate Charge On-Resistance vs. Junction Temperature
5 1.50 l
A VDS=4V VGS=4-5V
ty lro=5.6 A A lro=5.6 A
a) 4 i Cl
, g 6 1.25
b' a it' g
J) // , g /
S'. O o
g 2 l E
o _/ a 1.00
o 1 L,
> ',,,,,,p'''''''
0 0.75 ,,,,,pw'''''''
0 4 8 12 16 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) To - Junction Temperature (°C)
20 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
_ 0.16
iii.] Ct
CD - o 0
g T J- 150 c E 0.12
5 , ID = 5.6 A
Ji' 0 0.08 N
(D "ii' "ss,..,
F? 0.04 '
0.00 0.25 0.50 0.75 1.00 1.25 1.50 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
4 Threshold Voltage Single Pulse Power, Juncion-To-Ambient
w''''' 60 r
E 0.2 N
,9 I = 250 A L
a D w v,,,,,,,,,,''''''' S 40 t
g? a N
8 0.0 's,
w,,-''''' "s,
/ ‘u...
\‘~--II|
-0.2 O
- - 75 100 125 150
50 25 0 25 50 0.001 0.01 0.1 1 10
T J - Temperature (°C) Time (sec)
www.vishay.com DocumentNumber: 70934
S-61812-Rev. B, 19-Jul-99
“5% Si4501DY
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) PCHANNEL
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Ji g 0.2 Notes:
, 'si, 2
'a,' E 0.1 fM
E E 0.1 t
-1 1 _
8 slr? t2 t1
(-ilre 1.Duty Cycle,D= T2
E 2. Per Unit Base = RmJA = 73°CNV
z 3. TJM - TA = PDuzthoA(t)
. 4. Surface Mounted
Single Pulse
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
2 Normalized Thermal Transient Impedance, Junction-to-Foot
li Duty Cycle = 0.5
03?: 0.2
if',' g
It E 0.1
E 2 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 70934 www.vishay.com
S-61812-Rev. B, 19-Jul-99 2-7
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