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SI4488DY
N-Channel 150-V (D-S) MOSFET
VISHAY
Si4488DY
Vishay Siliconix
N-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
Vos(V) rosmmm ID (A) otfJ'd
150 0.050 @ VGS = 10 v 5.0 ttet,', Cost
S D G oJ
Top View S
Ordering Information: Si4488DY
Si4488DY-T1 (with Tape and Reel) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 150
Gate-Source Voltage VGS I20
TA = 25°C 5.0 3.5
Continuous Drain Current (To = 150°C)3 ID
TA = 70"C 4.0 2.8
Pulsed Drain Current IBM 50
Avalanch Current L = 0.1 mH IAS 25
Continuous Source Current (Diode Conduction)" ls 2.8 1 4 A
TA=25°C 3.1 1.56
Maximum Power Dissipation" PD W
TA = 70°C 2.0 1.0
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 33 40
Maximum Junction-to-Ambienta RthUA
Steady State 65 80 nc/w
Maximum Junction-to-Foot (Drain) Steady State RthJF 17 21
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71240 www.vishay.com
S-03951-Rev. B, 26-May-03
Si4488DY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = Kas, ID = 250 MA 2.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = 120 V d: 100 nA
VDs=120V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS WA
VDS=120V,VGS=0V,TJ=55°C 5
On-State Drain Currenta |D(on) Vos 2 5 V, VGs = 10 V 50 A
Drain-Source On-State Resistance" rDS(on) VGS = 10 V, ID = 5 A 0.041 0.050 Q
Forward Transconductancea gfs Vos = 15 V, ID = 5 A 18 S
Diode Forward Voltagea VSD ls = 2.8 A, VGS = 0 V 0.75 1.1 V
Dynamicb
Total Gate Charge Q9 30 36
Gate-Source Charge Qgs VDs = 75 V, VGs = 10 V, ID = 5 A 8.5 nC
Gate-Drain Charge di 8.5
Gate Resistance Rg 0.2 0.85 1.2 Q
Turn-On Delay Time td(on) 12 18
Rise Time tr Yoo-- 75V, RL=15Q 7 11
Turn-Off Delay Time td(ott) ID - 5 A, VGEN = 10 V, Rs = 6 Q 22 33 ns
Fall Time If 10 15
Source-Drain Reverse Recovery Tlme trr IF = 2.8 A, di/dt = 100 A/gs 4O 70
a. Pulsetest; pulse width 5 300 us. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
50 l 50
VCs =10thru 7 v
40 , 40
Cir" ',,,e'''' g
E 30 d E 30
'r, 'r,
S 20 E 20
, , TC = 125°C
- IO - IO I
5V 25 c "s, l
3, 4 v J "? C
0 2 4 6 8 10 0 1 2 3 4 5 6 7
VDs - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71240
2 S-03951-Rev. B, 26-May-03
VISHAY
Si4488DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
fit 0.08
if 0.06
t VGS = 10 v ----"
_.....-----""
' 0.04
0 10 20 30 40 50
ID - Drain Current (A)
Gate Charge
VDS = 75 V
s. ID = 5 A
fi).' 16 I
o 15 30 45 60
09 - TotaIGate Charge(nC)
Source-Drain Diode Forward Voltage
Is - Source Current(A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V30 - Source-to-Drain Voltage(V)
C - Capacitance (pF)
rDs(0n) - On-Resistance(§2)
I’Dsmn) - On-Resistance (9)
(Normalized)
Capacitance
F" Coss
0 30 60 90 120 150
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 5 A /
s,,,,,,,,,-''''''"
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
ID-- 5A
a-...-,
2 4 6 8 10
V68 - Gate-to-Source Voltage (V)
Document Number: 71240
S-03951-Rev. B, 26-May-03
www.vishay.com
Si4488DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage AvalancheCurrent vs. Time
1.0 100
0 5 "s,
"s, ID = 250 “A
8 0 0 c, 10
'l)..] -0.5 'c T 125 C
g' 's, 1
-1.5 0.1
-50 -25 0 25 50 75 100 125 150 10-5 10-4 10-3 10-2 1O-1 1
To - Temperature (°C) Time (sec)
Single Pulse Power
0.01 0.1 1 10 100
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
f, Duty Cycle = 0.5
st, 'i'
ya 0.2
"if',' g Notes:
5 E 0.1 -,,C,
l? a, 0.1 DM
g .5 1
g -lt-I t2
2 1. Duty Cycle, D = T1
2. Per Unit Base = RmJA = 65°CNV
. 3. TJM - TA = PDMZIhJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71240
4 S-03951-Rev. B, 26-May-03
VISHAY Si4488DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Single Pulse
10-4 10-3 10-2 IO-l 1 10 100 1000
Square Wave Pulse Duration (sec)
Document Number: 71240 www.vishay.com
S-03951-Rev. B, 26-May-03 5
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