SI4486EY-T1 ,N-Channel 100-V (D-S) MOSFETS-03951—Rev. B, 26-May-032-1Si4486EYVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED ..
SI4487DY , P-Channel 30 V (D-S) MOSFET
SI4488DY ,N-Channel 150-V (D-S) MOSFETS-03951—Rev. B, 26-May-03 1Si4488DYVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED) ..
SI4490DY ,N-Channel 200-V (D-S) MOSFETS-03951—Rev. B, 26-May-03 3I - Source Current (A) V - Gate-to-Source Voltage (V) r - On-Resistan ..
SI4490DY-T1 ,N-Channel 200-V (D-S) MOSFETS-03951—Rev. B, 26-May-03 3I - Source Current (A) V - Gate-to-Source Voltage (V) r - On-Resistan ..
SI4496DY ,N-Channel 100-V (D-S) MOSFETS-03951—Rev. C, 26-May-03 1Si4496DYVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED) ..
SL2309SC-1H , Low Jitter and Skew 10 to 140 MHz Zero Delay Buffer (ZDB)
SL2364C , VERY HIGH PERFORMANCE TRANSISTOR ARRAYS
SL2364C , VERY HIGH PERFORMANCE TRANSISTOR ARRAYS
SL2364C , VERY HIGH PERFORMANCE TRANSISTOR ARRAYS
SL24 ,Silicon epitaxial planer typeMAXIMUM RATINGSRating Symbol Value UnitPeak Power Dissipation @ 8x20 usec (Note 1) P 300 Wpk@ T ≤ 2 ..
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SI4486EY-T1
N-Channel 100-V (D-S) MOSFET
VISHAY Si4486EY
Vishay Siliconix
N-Channel 1oo-v (D-S) MOSFET
PRODUCT SUMMARY 1‘16 c\'\°“‘ ’0“
VDs(V) rosmusz) ID(A) ',itet bt'
0.025@v =10V 7.9 . B"
100 i'y1oi'i'/i'fi:,1ii.od', W93 1109
S D G I
To IAew
Orderinglnformation: Si4486EY
Si4486EY-T1 (with Tape and Reel) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage 1/ros 100
Gate-Source Voltage VGS 21:20
TA = 25°C 7.9 5.4
Continuous Drain Current (T J = 175°C)a ID
TA = 85°C 6.1 4.2
Pulsed Drain Current IBM 40
Avalanche Current IAR 30
L = 0.1 mH
Repetitive Avalanche Energy (Duty Cycle 5 1%) EAR 45 ml
Continuous Source Current (Diode Conduction)a ls 3.1 1.5 A
TA = 25°C 3.8 1.8
Maximum Power Dissipation" PD W
TA = 85°C 2.3 1.1
Operating Junction and Storage Temperature Range T J, Tstg -55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 33 40
Ma im m J nction-to-Ambienta R
XI u u I I Steady State WA 70 85 ''CA/V
Maximum Junction-to-Foot (Drain) Steady State Rm}: 17 21
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71234 www.vishay.com
S-03951-Rev. B, 26-May-03 2-1
Si4486EY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = Kas, ID = 250 MA 2 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = 120 V d: 100 nA
VDs=80V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS WA
VDS=8OV,VGS=0V,TJ=85°C 20
On-State Drain Currenta |D(on) Vos 2 5 V, VGs = 10 V 40 A
N/ss = 10 V, ID = 7.9A 0.021 0.025
Drain-Source On-State Resistancea rDs(on) Q
VGS=6.OV, ID: 7.5A 0.023 0.028
Forward Transconductancea 9ts I/os = 15 V, ID = 7.9 A 35 S
Diode Forward Voltage" I/sro Is = 3.1 A, Veg = 0 V 0.8 1.2
Dynamicb
Total Gate Charge % 36 44
Gate-Source Charge Qgs VDs = 50 V, VGS = 10 V, ID = 7.9 A 10 nC
Gate-Drain Charge di 8.6
Gate Resistance R9 05 1.27 2.2 Q
Turn-On Delay Time thon) 20 40
Rise Time tr VDD = 50 V, RL = 50 Q 10 20
Turn-Off Delay Time tam) ID _ 1 A, VGEN = 10 V, Re = 6 Q 46 90 ns
Fall Time tf 26 50
Source-Drain Reverse Recovery Tlme trr IF = 3.1 A, dildl = 100 Alps 50 80
a. Pulsetest; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
Vss=10thru6V 5V
Ct ig"
E 24 / E 24
o o / I
I' 16 e 16
l ' To = 150°C
- 8 - 8 2irc
4 V -55°C
0 1 2 3 4 0 2 3 4 5 6
VDs - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71234
S-03951-Rev. B, 26-May-03
VISHAY
Si4486EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
is" 0.03
.9 VGS = 6.0 V
c 0.02 -
C) VGS = 10 V
f 0.01
0 8 16 24 32 40
ID - Drain Current (A)
Gate Charge
10 _ _
VDS = 50 V
s. ID = 7.9 A
g //'"
'5 6 I
0 6 12 18 24 30 36
09 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V30 - Source-to-Drain Voltage(V)
Capacitance
C - Capacitance (pF)
O 10 20 30 4O 50 60
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
Vss=101/
A 2.3 - |D=7.9A '
c A 2.0
.9 u "
tD & /
g g 1.7 l
, V 1.4
8 1-1 "
0,8 /l/
0.5 "se'''
-5O -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
2; 0.06 lro=7.9A
a; 0.04
"iris'"
if 0.02 I
o 2 4 6 8 10
V68 - Gate-to-Source Voltage (V)
Document Number: 71234
S-03951-Rev. B, 26-May-03
www.vishay.com
Si4486EY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.5 's, 50 I
"ss, 40
0.0 ID = 250 WA l
"ss,,.
.1_o Ns,, 10 “n
'ss, "s,
-1.5 N. 0
-50 -25 O 25 50 75 100 125 150 175 0.01 0.1 1 10 100 600
Power (W)
V650,» Variance (V)
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
f, Duty Cycle = 0.5
Il 8 0
"if',' E
it ' th1 J,,,-,
T7 L th1 DM
g f? 1
_.L: v-
1. Duty Cycle, D = T
2. Per Unit Base = RNA = 70°CIW
3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
5 Duty Cycle = 0.5
3% 0.2
"if',' g
tt , 0.1
'i' I? 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71234
2.4 S-03951-Rev. B, 26-May-03
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