SI4480EY ,80-V (D-S) SingleS-03951—Rev. B, 26-May-032-1Si4480EYVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED ..
SI4480EY-T1 ,N-Channel 80-V (D-S) MOSFETS-03951—Rev. B, 26-May-032-1Si4480EYVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED ..
SI4482DY ,N-Channel, 100-V SingleS-03951—Rev. B, 26-May-032-3V - Gate-to-Source Voltage (V) r - On-Resistance (Ω ) I - Drain Curr ..
SI4482DY-T1 , N-Channel 100-V (D-S) MOSFET
SI4482DY-T1 , N-Channel 100-V (D-S) MOSFET
SI4483ADY , P-Channel 30-V (D-S) MOSFET
SL2150F , Front End Power Splitter with AGC
SL2150F , Front End Power Splitter with AGC
SL22 ,LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERThermal Characteristics (TA = 25°C unless otherwise noted)Parameter Symbols SL22 SL23 UnitsDevice m ..
SL23 ,LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERElectrical Characteristics (TA = 25°C unless otherwise noted)Parameter Symbols SL22 SL23 UnitsMaxim ..
SL2309SC-1H , Low Jitter and Skew 10 to 140 MHz Zero Delay Buffer (ZDB)
SL2364C , VERY HIGH PERFORMANCE TRANSISTOR ARRAYS
SI4480EY
80-V (D-S) Single
VISHAY
i4480EY
N-Channel 80-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Q) ID (A)
0.035@VGs=10V 6.2
80 0.040 @ N/ss = 6.0 v 5.8
Top Mew
Ordering Information: Si4480EY
Si4480EY-T1 (with Tape and Reel)
N-Channel MOSFET
Vishay
Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V93 80
Gate-Source Voltage VGS :20
TA = 25°C 6.2
Continuous Drain Current (To = 175°C)a, b ID
TA = 70°C 5.2
Pulsed Drain Current IDM 40
Continuous Source Current (Diode Conduction)", b ls 2.5
TA = 25°C 3
Maximum Power Dissipation' b PD W
TA = 70°C 2.1
Operating Junction and Storage Temperature Range To, Tsig -55 to 175 "'C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 40 50
Maximum Junction-to-Ambienta R
Steady State thJA 85 100 °CNV
Maximum Junction-to-Lead Steady State RthJL 20 24
a. Surface Mounted on FR4 Board, t s 10 sec.
b. t s 10 sec.
Document Number: 71060 www.vishay.com
S-03951-Rev. B, 26-May-03
Si4480EY V:lSHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typb Max Unit
Static
Gate Threshold Voltage Vegan) Vros = VGS, ID = 250 WA 2 V
Gate-Body Leakage ksss Vos = O V, VGS = ch 20 V i 100 nA
VDs=80V,VGs=0V 1
Zero Gate Voltage Drain Current 'DSS WA
VDS=80V,VGS=OV,TJ=55°C 20
On-State Drain Currena loam) VDs = 5 V, VGS = 10 V 20 A
VGS = 10 V, ID = 6.2 A 0.026 0.035
Drain-Source On-State Resistancea rDS(on) Q
Ves = 6.0 V, ID = 5.8 A 0.030 0.040
Forward Transconductancea gts VDS = 15 V, ID = 6.2 A 25 S
Diode Forward Voltagea Vsro Is = 2.1 A, VGS = 0 V 1.2
Dynamicb
Total Gate Charge Q9 30 50
Gate-Source Charge Qgs Vos = 40 V, VGS = 10 V, ID = 6.2 A 9 nC
Gate-Drain Charge di 5.6
Gate Resistance R9 1.5 4.0 Q
Turn-On Delay Time td(on) 12.5 25
Rise Time tr VDD = 40 V, RL = 30 Q 12.5 25
Turn-Off Delay Time tdwm In E 1 A, VGEN = 10 V, Re = 6 Q 52 80 ns
Fall Time If 22 40
Source-Drain Reverse Recovery Time trr IF = 2.1 A, di/dt = 100 Alps 50 80
a. For design aid only; not subject to production testing.
b. Pulsetest; pulse width s 300 ps. duty cycle s 2%.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
if Vss=10thru6V
32 I 32
<3 'ii:] /
E 24 5 V E 24 I
(is 16 1/1 (f, 16 I
I , Tc = 125°C.
Cy o l l
_ 8 _ 8 2‘5oc y
4 v l 's' -55°C
0.0 0.8 1.6 2.4 3.2 4.0 0 1 2 3 4 5 6
VDs - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71060
2-2 S-03951-Rev. B, 26-May-03
VISHAY
Si4480EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
A 0.04
E VGs = 6 v m,.----''''''"'"
tD .-----"'''"
55 0.03
i) Vss = 10 v
8 0.02
9 0.01
0 10 20 30 40
ID - Drain Current (A)
Gate Charge
Vos = 40 V
Lt ID = 6.0 A
it' 4 /"
0 6 12 18 24 30
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
E T J = 175°C
0.0 0.2 0.4 0.6 0.8
V30 - Source-to-Drain Voltage(V)
1.0 1.2
C — Capacitance (pF)
roman) - On-Resistance(Q)
rDS(on)- On—Resistance ( Q )
(Normalized)
Capacitance
2000 L Ciss
1000 l
500 Coss
Crss\\
0 10 20 30 40 50 60
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.4 l _ l
VGS = 10 V I
2.2 - ID = 6 A
1.2 ,/
-5O -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
ID = 6.0A
'ss,..,,
4 5 6 7 8 9 10
V53 - Gate-to-Source Voltage (V)
Document Number: 71060
S-03951-Rev. B, 26-May-03
www.vishay.com
Si4480EY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.5 "s, 50
"ss, 40
0.0 ID = 250 WA
E "ss, ir, 30
g -0.5 'S,, g
fi, 'N Q 20 l
-1.0 'su N,
N, 10 t
I ~‘--
-1.5 0
-50 -25 0 25 50 75 100 125 150 175 10-2 IO-l 1 10 100 600
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
li' Duty Cycle = 0.5
g 8 0.2
"if',' E
it ' th1 T
T7 L 0.1 PDM
8 f? l
T, _ 0.05
g -21 t2 t
a 0.02 1. Duty Cycle, D = T1
2. Per Unit Base = RNA = 85°CIW
. 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
ii' g 0.1
Il 'i, 0.02
"if',' g
LU E 0.01 Single Pulse
fl 0.001
10-4 10-3 10-2 IO-l 1 10 100
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71060
2.4 S-03951-Rev. B, 26-May-03
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