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SI4465DY
P-Channel 1.8-V (G-S) MOSFET
VISHAY
Si4465 DY
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.009@VG3= -4.5V -14
-8 0.011@Vss= -2.5v -12
0.016@VGS=-1.8V -10
Ordering Information:
QUJUJUJ
Top 1hew
Si4465DY
Si4465DY-T1 (with Tape and Reel)
Vishay Siliconix
stil,') 9(6‘5
.tttlt, t,,f)1
P-Channel MOSFET
t'iCois
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V93 -8
Gate-Source Voltage VGS 3:8
TA = 25''C -14
Continuous Drain Current (T J = 150oG)a' b ID
TA = 70''C -11 A
Pulsed Drain Current IDM -40
Continuous Source Current (Diode Conduction)' ls -2.1
TA = 25°C 2.5
Maximum Power Dissipation' b PD W
TA = 70°C 1.6
Operating Junction and Storage Temperature Range Tu, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 50
Maximum Junction-to-Ambienta RNA "CN/
Steady State 80
a. Surface Mounted on FR4 Board.
b. t 510 sec.
Document Number: 70830
S-31989-ReV. B, 13-Oct-03
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Si4465DY
IE=7'"
VISHAY
Vishay Siliconix
SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) VDs = VGS, ID = -250 WA -0.45 V
Gate-Body Leakage less VDs = 0 V. VGs = i8 V i 100 nA
1/Ds=-8V,Vss--0V -1
Zero Gate Voltage Drain Current loss liA
VDs---8V,VGs--0V,TJ--550C -5
On-State Drain Currenta IBM) Vos 2 -5 V, Ves = -4.5 V -20 A
VGS = -4.5 v, ID = - 14 A 0.007 0.009
Drain-Source On-State Resistancea roam) vss = -2.5 V, b = -12 A 0009 0.011 Q
VGs=-1.8\AID= -10A 0.012 0.016
Forward Transconductancea gfs VDS = -10 V, ID = - 14 A 60 S
Diode Forward Voltagea I/sro ls = -2.1 A, VGS = 0 V 0.7 -1.2
Dynamicb
Total Gate Charge Q9 80 120
Gate-Source Charge Qgs VDS = -4 V, VGS = -4.5 V, ID = - 14 A 15 n0
Gate-Drain Charge di 9
Turn-On Delay Time tum) 45 90
Rise Time tr VDD = " V, RL = 4 Q 55 110
Turn-Off Delay Time td(ott) ID _ -1 A, VGEN = -4.5 V, RG = 6 Q 380 760 ns
Fall Time t, 190 380
Source-Drain Reverse Recovery Time trr IF = -2.1 A, di/dt = 100 Alps 80 120
a. Pulse test; pulse width s 300 ps, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
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DocumentNumber: 70830
S-319B9-F%v. B, 13-Oct-03
VISHAY
Si4465 DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
40 l l
Ves = 5 thru 2 V
Ct Cd.
E 24 1.5 V E
(i, 16 se''''"''" (i,
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
a 0 03
, . b..
(U ll)
."'tin' 8
tr; 0.02 8
1.8 0.01
O 8 16 24 32 40
ID - Drain Current (A)
Gate Charge
VDS = 4 V ww''''''''
'if,- 4 ID = 14 A A
m " Cir
i ow'''' g. 73‘
2 3 ‘5 y
$ w''''''" 5 g
Sl O o
is, 2 / ' ?.iC.
(5 _/ E"
O 20 40 60 80
Q9 - TotalGate Charge(nC)
Transfer Characteristics
Tc=125°C
8 25''C /
0.0 0.5 1.0 1.5 2.0
Vas - Gate-to-Source Voltage (V)
Capacitance
0 2 4 6 8
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.4 I l
VGS = 4.5 V /
1.3 - ID = 14 A w''''
1.2 w""'
1.1 4”]
0.9 //
-50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature CC)
DocumentNumber: 70830
S-31989-ReV. B, 13-Oct-03
www.vishay.com
Si4465DY
IE=7'"
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
A a 0.03
E TJ = 150°C 3
y _ttQ
(i g 0 02
i, g" ID = 14 A
- a 0.01 i
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 l l 50
ID = 250 “A I
0.3 /" 40
E 0.2 I
© " A 30
E 0.1 / t, N
'l " t
'g, Q 20 t
8 0 0 l
-0.1 // _
,,P' 'ss..
-0.2 o
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
Tu - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
Thermal Impedance
I, Duty
Normalized Effective Transient
Single Pulse
10-4 10-3 10-2 IO-l 1 10
Square Wave Pulse Duration (sec)
_.L: tlr- t
Cycle, D = ta
2. Per Unit Base = RthJA = 80°C/W
3. TJM - TA = PDMZthJAm
4, Surface Mounted
100 600
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DocumentNumber: 70830
S-319B9-F%v. B, 13-Oct-03
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