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SI4431BDY ,P-Channel 30-V (D-S) MOSFETS-22437—Rev. A, 20-Jan-03 3I - Source Current (A) V - Gate-to-Source Voltage (V) r - On-Resistan ..
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SI4431BDY
P-Channel 30-V (D-S) MOSFET
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VISHAY
Si4431BDY
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Q) ID (A)
0.030 @ VGS = -10 v -7.5
0050 @ VGS = -4.5 v -5.3
Top Mew
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS -30
Gate-Source Voltage VGs $20
TA=25°C -7.5 -5.7
Continuous Drain Current (To = 150°C)3 ID
TA = 70°C - 6.0 -4.6 A
Pulsed Drain Current IBM -30
continuous Source Current (Diode Conduction)a ls -2.1 -1.2
TA = 25°C 2.5 1.5
Maximum Power Dissipation" Pro W
TA = 70°C 1.6 0.9
Operating Junction and Storage Temperature Range To, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 38 50
Maximum Junction-to-Ambienta R
Steady State WA 70 85 “CM
Maximum Junction-to-Foot Steady State RthJF 22 28
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 72092 www.vishay.com
S-22437-Rev. A, 20-Jan-03
Si4431BDY
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) I/tos = VGS, ID = -250 “A -1.0 -3.0 V
Gate-Body Leakage less VDs = 0 V, VGS = $20 V cl: 100 nA
VDs=-24V,VGs=0V -1
Zero Gate Voltage Drain Current loss “A
Vos = -24 V, VGS = 0V, To = 70°C -10
Vos = -5 V, VGS = -10 V -30 A
On-State Drain Currenta IBM)
Vos = -5 V, VGS = -4.5 V -7 A
VGs = -10 V, ID = -7.5 A 0.023 0.030
Drain-Source On-State Resistancea roman) Q
VGS = -4.5 V, ID = -5.8 A 0.036 0.050
Forward Transconductancea gfs Vos = -15 V, ID = -7.5 A 18
Diode Forward Voltagea VSD ls = -2.1 A, VGS = 0 V -0.78 -1.1 V
Dynamicb
Total Gate Charge Q9 13 20
Gate-Source Charge Qgs VDs = -15 V, VGS = -5 V, ID = -7.5 A 3.6 nC
Gate-Drain Charge di 6
Turn-On Delay Time tam) 10 20
Rise Time tr VDD = -15 V, RL =15 Q 10 20
Turn-Off Delay Time td(off) ID _ -1 A, VGEN = -10 V, Rs = 6 S2 70 110 ns
Fall Time tf 47 70
Source-Drain Reverse Recovery Tlme trr IF = -2.1 A, di/dt = 100 A/gs 45 80
a. Pulsetest; pulse width s 300 us. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
I _ l r
VGS =10thru 5V
"r-"''" 4V
24 I w-'''''''" 24
<3 , 'i:.'.
E 18 E 18
S // 5
E' 12 E 12
i, L Tc-- 125°C
- 6 3V _ 6
---" 25°C ss,g)/'/
I -55 °C
0 o _ l
0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Vos - Drain-to-Source VoItage(V) Ves - Gate-to-Source Voltage(V)
www.vishay.com DocumentNumber: 72092
S-22437-Reu A, 20-Jan-03
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VISHAY
Si4431BDY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
0.04 - VGS = 4.5 V
Kas-- 10V
I’Dsmn) - On-ReSIstance ( £2)
0 5 10 15 20 25 30
ID - Drain Current(A)
Gate Charge
VDS=15V /'"
ko-- 7.5A
VGS - Gate-to-Source Voltage (V)
O 5 10 15 2O 25
09 - TotaIGate Charge(nC)
Source-Drain Diode Forward Voltage
TJ = 150°C
Is - Source Current (A)
0.0 0.2 ou 0.6 0.8 1.0 1.2 1.4
V30 - Source-to-Drain Voltage(V)
Capacitance
C - Capacitance (pF)
O 6 12 18 24 3O
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS= 10V
ID = 7.5 A o,,,pr''''
1.4 w,,,,,,,,-'''''"
rDs(0n) - On-ReSIstance (9)
(Normalized)
0.8 "''
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
I’Dsmn) - On-Resistance (Q)
0.02 "'"'"m-
0 2 4 6 8 10
V68 - Gate-to-Source Voltage (V)
Document Number: 72092
S-22437-Rev. A, 20-Jan-03
www.vishay.com
. I=7'"
Si4431BDY VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.6 50 ,
0.4 l/ 40 (
S' ID = 250 WA /''" \
, 0.2 E 30
gi" 0 0 fi] 20
i7i" .
-o 2 /
/ 10 'N,
"s.. -
-0.4 0
-50 -25 0 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600
To - Temperature (°C) Time (sec)
Safe Operating Area
100 - IDM Limited
rDS(on) Limited
10 P(t) = 0.0001
Tz,' P(t) = 0.001
tg 1 I 12.1101
D(on) = .
2 Limited
E P(t) = 0.1
E TA = 25''C T) I l
0.1 Single Pulse P(t) = 10
BVDSS Limited
0.1 1 10 100
Vos - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
h' Duty Cycle = 0.5
'.t,zsil. 0.2
"tfo,' g Notes:
5 E 0.1 -T-
T7 E 0 1 PDM
o (D . l
i-),' e 0.05
g L t2
a 0.02 1. Duty Cycle, D = T
2. Per Unit Base = RthJA = 70°CNV
Single Pulse 3. Tou _ TA = pDMZmJA(l)
4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 72092
S-22437-Reu A, 20-Jan-03
“3% Si4431BDY
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 72092 www.vishay.com
S-22437-Rev. A, 20-Jan-03 5
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