SI4431 ,P-Channel Logic Level PowerTrench MOSFETSi4431DYJanuary 2001Si4431DY P-Channel Logic Level PowerTrench MOSFET
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SI4431
P-Channel Logic Level PowerTrench MOSFET
Si4431DY January 2001 Si4431DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced • –6.3 A, –30 V. R = 0.032 Ω @ V = -10 V DS(ON) GS using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored R = 0.05 Ω @ V = -4.5 V DS(ON) GS to minimize on-state resistance and yet maintain superior switching performance. • Low gate charge These devices are well suited for low voltage and • Fast switching speed battery powered applications where low in-line power loss and fast switching are required. • High performance trench technology for extremely Applications low R DS(ON) • DC/DC converter • High power and current handling capability • Load switch • Motor Drive D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1a) -6.3 A D – Pulsed -40 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics °C/W R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 θJA °C/W R Thermal Resistance, Junction-to-Case (Note 1) 25 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 4431 Si4431DY 13’’ 12mm 2500 units 2001 Fairchild Semiconductor International Si4431DY Rev A
