SI4420DYTR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.SO-8Absolute Maximum RatingsParameter Max. UnitsV Drain- Source Voltage 30 VDSI @ T = ..
SI4420DYTRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.SO-8 Parameter Max. UnitsV Drain- Source Voltage 30 VDSI @ T = 25° ..
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SI4425DY ,Single P-Channel, Logic Level, PowerTrench TM MOSFETS-31990—Rev. E, 13-Oct-03 3I - Source Current (A) V - Gate-to-Source Voltage (V) r - On-Resistan ..
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SI4420DYTR
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 93835
TOR Rectifier
HEXFET© Power MOSFET
o N-Channel MOSFET
0 Low On-Resistance 8 E1 , “33 D V - 30V
. Low Gate Charge 2 7 DSS -
s :1: H CW] D
0 Surface Mount (tf
0 Logic Level Drive s mf 6333 D
G ED:4 5-CIIn D RDS(on) = 0.0099
. . To View
Description p
This N-channel HEXFET® power MOSFET is produced
using International Rectifer's advanced HEXFET power
MOSFET technology. The low on-resistance and low gate
charge inherent to this technology make this device ideal
for low voltage or battery driven power conversion
applications
The SO-8 package with copper leadframe offers enhanced J' 1 'l . i.;
thermal characteristics that allow power dissipation of /lie''"
greater that 800mW in typical board mount applications. _
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage 30 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 112.5
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 110 A
los, Pulsed Drain Current C) 150
PD @TA = 25°C Power Dissipation © 2.5 W
PD @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 0.02 W/°C
EAS Single Pulse Avalanche Energy© 400 mJ
VGS Gate-to-Source Voltage i 20 V
Tu, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient) 50 °C/W
1
1/3/2000
Si4420DY
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGs = 0V, lo = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.028 - V/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - - 0.009 n VGS = 10V, ID = 12.5A ©
- - 0.013 N/ss = 4.5V, ID = 10.5A C)
VGS(th) Gate Threshold Voltage 1.0 - - V VDs = Ves. ID = 250pA
gfs Forward Transconductance - 29 - S Vos = 15V, ID = 12.5A
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 30V, VGS = 0V 0
- - 5.0 VDs = 30V, VGS = 0V, TJ = 55 C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -20V
Gate-to-Source Reverse Leakage - - 100 VGS = 20V
% Total Gate Charge - 52 78 ID = 12.5A
Qgs Gate-to-Source Charge - 8.7 - nC VDS = 15V
di Gate-to-Drain ("Miller") Charge - 12 - Vss = 10V, See Fig. 6 ©
tum) Turn-On Delay Time - 15 - VDD = 15V
tr Rise Time - 10 - ns ID = 1.0A
td(off) Turn-Off Delay Time - 55 - Rs = 6.09
tr Fall Time - 47 - R9 = 159, ©
Ciss Input Capacitance - 2240 - l/ss = 0V
Coss Output Capacitance - 1100 - pF VDS = 15V
Crss Reverse Transfer Capacitance - 150 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Diode Conduction) - - 2.3 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) OD - - 50 p-n junction diode. s
VSD Diode Forward Voltage - - 1.1 V TJ = 25°C, IS = 2.3A, VGS = 0V ©
trr Reverse Recovery Time - 52 78 ns TJ = 25°C, IF = 2.3A
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width 3 300ps; duty cycle 5 2%.
© When mounted on FR4 Board, t 310 sec
Starting To = 25°C, L = 13mH
Rs = 259, IAS = 8.9A. (See Figure 15)
