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SI4420DY
Single N-Channel Logic Level PowerTrench MOSFET
VISHAY
Si4420DY
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Q)
ID (A)
0.009 @ I/cs =10 v
0.013 © N/ss = 4.5 v
(DUJUJUJ
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Ordering Information: Si4420DY
Si4420DY-T1 (with Tape and Reel)
N-Channel MOSFET
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 sec Steady State Unit
Drain-Source Voltage Vos 30
Gate-Source Voltage VGS cl: 20
TA=25°C 13.5 9.5
Continuous Drain Current (To = 15tPC)a ID
TA=7O°C 10.8 7.5
Pulsed Drain Current IDM 50
Continuous Source Current (Diode Conduction)" ls 2.7 1.36
TA = 25°C 3.0 1.5
Maximum Power Dissipation" PD W
TA = 70°C 1.9 0.95
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 ”C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t < 10 sec 33 42
Maximum Junction-to-Ambienta RthJA
Steady State 70 84 ''CllN
Maximum Junction-to-Foot (Drain) Steady State RthJF 16 21
a. Surface Mounted on FR4 Board, t s 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/productlspice.htm
Document Number: 71818
S-31062-Rev. E, 26-May-03
www.vishay.com
Si4420DY V:ISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) VDS = VGS, ID = 250 0A 1.0 2.0 3.0 V
Gate-Body Leakage IGSS Vros = 0 V, VGS = l 20 V i 100 nA
Vros=24V,Vss=0V 1
Zero Gate Voltage Drain Current Iross VDS = 24 V, VGS = 0 V, To = 55°C 5 WA
On-State Drain Currenta IBM) Vros 2 5 V, VGS = 10 V 30 A
VGS =10 v, ID =13.5 A 0.0075 0.009
Drain-Source On-State Resistancea roam) VGs = 4.5 V, ID = 11 A 0.010 0.013 Q
Forward Transconductancea gfs VDS = 15 V, ID = 13.5 A 50 S
Diode Forward Voltagea VSD ls = 2.3 A, VGs = 0 V IA
Dynamicb
Gate Charge Qg Vos = 15 V, VGS = 5 V, ID = 13.5 A 29 45
Total Gate Charge Q91 58 90 nC
Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 13.5 A 12
Gate-Drain Charge di 9.5
Gate Resistance Rs 0.5 2.1 4.6 Q
Turn-On Delay Time td(on) 22 35
Rise Time tr VDD = 15 v, RL = 15 Q 13 20
Turn-Off Delay Time tdmm lo - 1 A, VGEN = 10 V, Rs = 6 Q 82 125 ns
Fall Tlme tf 30 45
Source-Drain Reverse Recovery Time trr IF = 2.3 A, dildt = 100 Alps 50 75
a. Pulsetest; pulse width S 300 ps, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
VGS =10hru4V
<3 cg j
st, 30 E 30 l
.E E I
S 20 E 20
Cl CI /
a Cl Tc=125 C l
_ 10 3V _ 10 1 l
250 / /
l \ -55''C
0 o 4 _
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Vos - Drain-to-Source Voltage(V) Veg - Gate-to-Source Voltage(V)
www.vishay.com DocumentNumber: 71818
2 S-31062-Rev. E, 26-May-03
VISHAY
Si4420DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
fit 0.024
g 0.018
o v - 4 5 v
' 0012 GS - .
0.006 VGS = 10 v
0 10 20 30 40 50
ID - Drain Current (A)
Gate Charge
10 _ _
VDS = 15 v /
s. ID = 13.5 A /
sl-', 6 /
0 10 20 30 40 50 60
09 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
E T J = 150°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V30 - Source-to-Drain Voltage(V)
C - Capacitance (pF)
rDs(0n) - On-Resistance(§2)
I’Dsmn) - On-Resistance (9)
(Normalized)
Capacitance
4000 Ciss
2000 It
1000 \ "s-.....,
0 4 8 12 16 20
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 l _
VGS = 10 V
ID = 13.5 A
1.4 //
J8 s,,,,,,,,,,,-'''''''''''
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
b = 13.5 A
0.01 '''''-s,
0 2 4 6 8
VGS - Gate-to-Source Voltage (V)
Document Number: 71818
S-31062-Rev. E, 26-May-03
www.vishay.com
Si4420DY V:ISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.4 200 )
0.2 "N 160
A ID = 250 “A
ty -0.0
g E 120
E -0.2 \ a
> it i
g \\ DC: 80 k
g' -0.4 N
S. 40 N
, "s,,
-0.8 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
f, Duty Cycle = 0.5
g E 0.2
"if',' E
it E th1 T
U g 0.1 PDM
8 f? l
T, _ 0.05
g -21 t2 t
a 0.02 1. Duty Cycle, D = T1
2. Per Unit Base = RNA = 70°CIW
. 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li' Duty Cycle = 0.5
3% 0.2
"if',' g
tt , 0.1
'i' I? 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71818
4 S-31062-Rev. E, 26-May-03
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