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SI4410DYTRPBF
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
Tait Rectifier
N-Channel MOSFET
Low On-Resistance
Low Gate Charge
Surface Mount
Logic Level Drive
Lead-Free
Description
This N-channel HEXFET© Power MOSFET is
produced using International Rectiher's advanced
HEXFET power MOSFET technology. The low on-
resistance and low gate charge inherent to this
technology make this device ideal for low voltage or
battery driven power conversion applications
The SO-8 package with copper leadframe offers
enhanced thermal characteristics that allow power
dissipation of greater that 800mW in typical board
PD - 95168
Si4410DYPbF
HEXFET@ Power MOSFET
sur 8 D I/ross = 30V
SDIZ H 7mm)
SDI3 T, 6E D
GUI“ 5EEDD RDS(on) = 0.0135Q
Top View
mount applications. SO-8
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage 30 V
ID @ TA = 25''C Continuous Drain Current, VGS @ 10V t10
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V t8.0 A
IDM Pulsed Drain Current CD t50
Pro @TA = 25''C Power Dissipation © 2.5
Pro @TA = 70''C Power Dissipation co 1.6 W
Linear Derating Factor 0.02 W/°C
dv/dt Peak Diode Recovery dv/dt s 5.0 V/ns
EAS Single Pulse Avalanche Energy© 400 mJ
VGS Gate-to-Source Voltage * 20 V
Tu, TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient® 50 'C/W
1
09/22/04
Si4410DYPbF
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.029 - V/°C Reference to 25°C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - 0.0100.0135 VGS = lov, ID = 10A ©
- 0.015 0.020 VGS = 4.5V, ID = 5.0A ©
VGS(th) Gate Threshold Voltage 1.0 - - V Vos = VGS, ID = 250pA
gts Forward Transconductance - 35 - S Vos = 15V, ID = 10A
loss Drain-to-Source Leakage Current - - 1.0 pA Vros = 30V, Vss = 0V 0
- - 25 V93 = 30V, Ves = 0V, T: = 55 C
less Gate-to-Source Forward Leakage - - -100 n A Vss = -20V
Gate-to-Source Reverse Leakage - - 100 VGs = 20V
% Total Gate Charge - 30 45 ID = 10A
Q95 Gate-to-Source Charge - 5.4 - nC Vos = 15V
di Gate-to-Drain ("Miller") Charge - 6.5 - I/cs = 10V, See Fig. 10 co
lawn) Turn-On Delay Time - 11 - Voc) = 25V
tr Rise Time - 7.7 - ns lo = 1.0A
td(off) Turn-Off Delay Time - 38 - Rs = 6.09
tf Fall Time - 44 - RD = 259, ©
Ciss Input Capacitance - 1585 - VGs = 0V
COSS Output Capacitance - 739 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 106 - f = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Diode Conduction)© - - 2.3 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) OD - - 50 p-n junction diode. s
VSD Diode Forward Voltage - 0.7 1.1 V TJ = 25''C, Is = 2.3A, VGS = 0V co
tn Reverse Recovery Time - 50 80 ns T: = 25°C, IF = 2.3A
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width S 300ps; duty cycle S 2%.
© When mounted on FR4 Board, 1310 sec
Starting TJ = 25°C, L = 8.0mH
Re: 259, IAS = 10A. (See Figure 15)
s Iso $2.3A, di/dt s 130Alps, VDD s V(BR)DSS,
T J s: 150°C
