SI4410DYTR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.SO-8Absolute Maximum RatingsParameter Max. UnitsV Drain- Source Voltage 30 VDSI @ T = ..
SI4410DYTR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.SO-8Absolute Maximum RatingsParameter Max. UnitsV Drain- Source Voltage 30 VDSI @ T = ..
SI4410DYTR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 91853CSi4410DY®HEXFET Power MOSFETl N-Channel MOSFETAAl Low On-Resistance1 8S DV = 30VDSSl Lo ..
SI4410DYTR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 91853CSi4410DY®HEXFET Power MOSFETl N-Channel MOSFETAAl Low On-Resistance1 8S DV = 30VDSSl Lo ..
SI4410DY-TR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplicationsThe SO-8 package with copper leadframe offers enhancedthermal characteristics that allo ..
SI4410DYTRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.SO-8 Parameter Max. UnitsV Drain- Source Voltage 30 VDSI @ T = 25° ..
SL13 ,LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERElectrical Characteristics (T = 25°C unless otherwise noted)AParameter Symbol SL12 SL13 UnitMaximum ..
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SI4410DYTR-SI4410DY-TR
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
PD - 91853C
Si441ODY
HEXFET© Power MOSFET
o N-Channel MOSFET
0 Low On-Resistance a
o Low Gate Charge S E 7330 VDss = 30V
0 Surface Mount s DI E 333 D
0 Logic Level Drive s D: 6:33 D
G DI 5-CIIn D RDS(on) = 0.01359
Description Top View
This N-channel HEXFETO Power MOSFET is produced
using International Rectifer's advanced HEXFET power
MOSFET technology. The low on-resistance and low gate
charge inherent to this technology make this device ideal
for low voltage or battery driven power conversion
applications
The SO-8 package with copper leadframe offers enhanced
thermal characteristics that allow power dissipation of
greater that 800mW in typical board mount applications.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage 30 V
ID @ TA = 25°C Continuous Drain Current, I/ss @ 10V 110
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 18.0 A
los, Pulsed Drain Current (O 150
PD @TA = 25°C Power Dissipation © 2.5 W
PD @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 0.02 W/°C
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
EAS Single Pulse Avalanche Energy) 400 mJ
N/ss Gate-to-Source Voltage , 20 V
Tu, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient) 50 °C/W
1
11/22/99
Si441ODY
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGs = 0V, lo = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.029 - W'C Reference to 25°C, lo = 1mA
Rosmn) Static Drain-to-Source On-Resistance - 0.0100.0135 VGS = 10V, ID = 10A ©
- 0.015 0.020 I/tss = 4.5V, ID = 5.0A C)
VGS(th) Gate Threshold Voltage 1.0 - - V VDs = Ves. ID = 250pA
gfs Forward Transconductance - 35 - S Vos = 15V, ID = 10A
loss Drain-to-Source Leakage Current _- _- 12: pA $3: ; 23x 3:31; Tu = 55°C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -20V
Gate-to-Source Reverse Leakage - - 100 VGS = 20V
% Total Gate Charge - 30 45 ID = 10A
Qgs Gate-to-Source Charge - 5.4 - nC VDS = 15V
di Gate-to-Drain ("Miller") Charge - 6.5 - Vss = 10V, See Fig. 10 ©
tum) Turn-On Delay Time - 11 - VDD = 25V
tr Rise Time - 7.7 - ns ID = 1.0A
td(off) Turn-Off Delay Time - 38 - Rs = 6.052
tr Fall Time - 44 - R9 = Mn, ©
Ciss Input Capacitance - 1585 - N/ss = 0V
Coss Output Capacitance - 739 - pF VDS = 15V
Crss Reverse Transfer Capacitance - 106 - f = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Diode Conduction)© - - 2.3 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) OD - - 50 p-n junction diode. s
VSD Diode Forward Voltage - 0.7 1.1 V TJ = 25°C, Is = 2.3A, I/cs = 0V ©
trr Reverse Recovery Time - 50 80 ns TJ = 25°C, IF = 2.3A
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width 3 300ps; duty cycle 5 2%.
© When mounted on FR4 Board, t 310 sec
Starting To = 25°C, L = 8.0mH
Re: 259, IAS-- 10A. (See Figure 15)
(S) ISD s2.3A, di/dt s 130Nys, VDD s V(BR)DSS,
T J I 150°C
