SI3552DV ,N-/P-Channel 30-V (D-S) Rated MOSFET FaxBack 408-970-5600S-61831—Rev. A, 23-Aug-992-1Si3552DVNew ProductVishay Siliconix
SI3552DV
N-/P-Channel 30-V (D-S) Rated MOSFET
VISHAY
New Product
Si3552DV
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
0.105@N/ss=10V I2.5
N-Channel 30
0.175@VGS=4.5V 12,0
0.200@Vss=-10V I1.8
P-Channel -30
0.360@VGs=-45V i1.2
TSOP-6
Top View
Gl CE 1 e TI DI
3mm szmz 5mm G104
G2 m a 4 TI D2
_ 2.85 mm _
N-Channel MOSFET
G'"'-]
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS l 20 cl: 20
TA=25°C i2.5 $1.8
Continuous Drain Current (TJ = 15o°c)a. b ID
TA=70°C izo i1.2
Pulsed Drain Current IDM i 8 i 7
Continuous Source Current (Diode Conduction)' b ls 1.05 -1.05
TA = 25°C 1.15
Maximum Power Dissipation' b PD W
TA = 70''C 0.73
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 "'C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 93 110
Maximum Junc’tion-to-Ambienta RthJA
Steady State 130 150 ''CAN
Maximum Junction-to-Lead Steady State RthJL 75 90
a. Surface Mounted on FR4 Board.
b. t s Ssec
Document Number: 70971
S-61831-Rev, A, 23-Aug-99
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Si3552DV
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
VDS = Vss, ID = 250 WA N-Ch 1.0
Gate Threshold Voltage Vss(th) V V I 250 A P Ch 1 0 V
DS = GS, D = - u - - V
N-Ch cl: 100
Gate-Body Leakage IGss VDs = 0 V, VGS = i20 V P Ch 100 nA
Vos = 24 V, VGs = 0 V N-Ch 1
' VDS = -24 V, VGS = 0 V P-Ch -1
Zero Gate Voltage Drain Current loss 11A
VDs=24 V,VGS=OV,TJ=55°C N-Ch 5
VDs=-24 V,VGS=0V, T: = 55°C P-Ch -5
Vos = 5 V, VGS = 10 v N-Ch 5
On-State Drain Currenta 'D(on) V V V 10 V P Ch A
DS = -5 , GS = - - -5
VGS = 10 V, ID = 2.5 A N-Ch 0.085 0.105
. . VGS = -10 V, ID = -1.8 A P-Ch 0.165 0.200
Drain-Source On-State Resistancea rcrs(on) Q
VGS=4.5 V, |D=2.0A N-Ch 0.140 0.175
VGS = -4.5 V, ID = -1.2 A P-Ch 0.298 0.360
v.35 = 10 V, ID = 2.5 A N-Ch 4.3
Forward Transconductancea gts S
Vros=-15V, lro=-1.8A P-Ch 2.4
IS=1.05A,VGS=0V N-Ch 0.81 1.10
Diode Forward Voltages VSD V
Is = -r05 A, VGs = 0 V P-Ch Ah83 -l .10
Dynamicb
N-Ch 2.1 3.2
Total Gate Charge Qg
N-Channel P-Ch 2.4 3.6
Vros= 15 V, Vss=5V,lro=1.8A N-Ch 0.7
Gate-Source Charge Qgs P Ch 0 9 n0
P-Channel - .
VDs=-15V, Vss=-5V,ID=-1.8A N-Ch 0.7
Gate-Drain Charge di P Ch 0 8
N-Ch 7 11
Turn-On Delay Time td(on)
P-Ch 8 12
N-Channel
N- h 14
Rise Time tr N/ors=15V,RL=15Q C 9
IDE1A1VGEN=1OV1RG=69 P-Ch 12 18
Turn Off Delay Time t P-Channel N-Ch 13 20 ns
- d(ott) VDD=-15V,RL=15Q
Iro-----1A,VGEN---10V,Rs--60 P-Ch 12 18
N-Ch 5 8
Fall Time tf P Ch 11
Source-Drain t IF = 1.05 A, di/dt = 100 A/ps N-Ch 35 60
Reverse Recovery Time IF = -1.05 A, di/dt = 100 Alps P-Ch 30 60
a. Pulsetest; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
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Document Number: 70971
S-61831-Rev. A, 23-Aug-99
VISHAY Si3552DV
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) N-CHANNEL
Output Characteristics Transfer Characteristics
l I (rc-- - ,tslisc' C
V = 10 thru 5 V
GS 25° C
ii" 6 / 4 v i-f 6
<3 'r"'''" 5 / 125 c
e 4 s 4
- 2 - 2
2V 3 V
0 1 2 3 4 5 O 1 2 3 4 5 6
VDS - Drain-to-Source Voltage(V) VGS - Gate-to-Source Voltage(V)
On-Resistance vs. Drain Current Capacitance
0.25 300
250 l c.
A 0.20 l88
Ci ",,,w''' A 'ss,........,
ID ca. 200
E 0.15 - VGS 4.5 V m,,,,,...-"--''"'''" g
.2 tt'
8 - 15 150 f
5 VGS = 10 v 'li.
o 0.10 8
' I 100
3 O Ns, Coss
g 0 05 t
" . 50 -""-
0 1 2 3 4 5 6 7 0 5 IO 15 20 25 30
b - Drain Current (A) VDs - Drain-to-Source Voltage (V)
10 Gate Charge 1 8 On-Resistance vs. Junction Temperature
1.6 - ,/
' 8_VDS=15V VGS=10V
G" Iro=1.8 A a ID=2.5 A
oils.' Tu, 1.4
> 6 c A
cn / a; g
g 4 8 fl 1.0
f,-',. -f L v
(3 / g 0.8
O 1 2 3 4 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature CC)
Document Number: 70971 www.vishay.com . FaxBack 408-970-5600
S-61831-Rev, A, 23-Aug-99 2-3
Si3552DV
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
N-CHANNEL
Source-Drain Diode Forward Voltage
10 0.40
2 so, .24
y T J = 150°C .2 0
o C) 0.16
:8 0.08
0.00 0.2 0.4 0.6 0.8 1.0 1.2
VsD - Source-to-Drain Voltage (V)
Threshold Voltage
0.4 I l 8
"ss, ID = 250 uA
0.2 V '
E -0.0
E -0 2 'N. a 4
> \ it
Cis.' E:
i)" 0.4 u
-0 6 'N,,
-0.8 0
-50 -25 0 25 50 75 100 125 150
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
b =le l
ID=2.5 A
2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Single Pulse Power (Junction-to-Ambient)
0.1 1 1 0 30
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
1 (t-4 1 0-3 1 0-2 1 o-I 1
Square Wave Pulse Duration (sec)
Notes:
-ly-1 _
1. Duty Cycle, D =
2. Per Unit Base = RthoA =130°CNV
3. TJM - TA = PDMZIhJAm
4. Surface Mounted
10 100 600
www.vishay.com . FaxBack 408-970-5600
Document Number: 70971
S-61831-Rev. A, 23-Aug-99
VISHAY
Si3552DV
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
N-CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Foot
li' Duty Cycle = 0.5
:12: ii 0.2
ili, E 0.1
T7 " 0.1
g g .05
Single Pulse
IO-A 10-3 10-2 IO-l 1 10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-GHANNEL
Output Characteristics Transfer Characteristics
I I (d 6V l I /
V = 10 thru 7 V ---"
GS ot) w,,,--'''''"'"'" TC = -55'C
',pi'''''" 6 l 4 l
A A 25°C /
s.. 5 v <5 "ss,
'l-l g 125°C
25 3 4
.5 4 E
c) 4V 'i
2 V IIs 3 v
o f I 0
0 1 2 3 4 0 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.6 l 300
A 240 Ci
Ct / "s. ISS
8 0.4 - f 9,
E VGS - 4.5 V 8 180
tn I 3:
dc? 0.3 I t):'s,
C) VGS = 10 v Q 120
J5 0.2 I
i)) \ Coss
" 0.1 60 Ns.. "'"'s--......_,
_-..-,
0 1 2 3 4 5 6 0 6 12 18 24 30
ID - Drain Curre
nt (A)
Vos - Drain-to-Source Voltage (V)
Document Number: 70971
S-61831-Rev, A, 23-Aug-99
www.vishay.com . FaxBack 408-970-5600
Si3552DV
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
10 GateCharge
VDS=15 v "
ID=1.8 A
s1S.? a A
a: /" Ct
f?, 6 / g A
a) tO RD
2 E Irld
g, 4 r'a 2
a'; C) v
(D / g
(n 2 g
0 1 2 3 4 5
Q9 - Total Gate Charge(nC)
Source-Drain Diode Forward Voltage
S... V
's Tu = 150°C I','-';
0.00 0.3 0.6 0.9 1.2 1.5
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
0.4 /’/
' 0.2 ID = 250 “A g
fg. 0.0 n.
> 'w'''''
Ah2 //
-50 -25 0 25 50 75 100 125 150
TJ - Temperature CC)
P-CHANNEL
On-Resistance vs. Junction Temperature
1.6 - 163328 ,/
1.2 //
-50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
lro=1.8A
0 2 4 6 B 10
V68 - Gate-to-Source Voltage (V)
Single Pulse Power (Junction-to-Ambient)
2 'ss.
\“~-...
0.01 0.1 1 10 30
Time (sec)
www.vishay.com . FaxBack 408-970-5600
Document Number: 70971
S-61831-Rev. A, 23-Aug-99
VISHAY
Si3552DV
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
P-CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
tO a.)
J-' g 0.2
',' E 0.1
T2 g 0.05
tO 0.02
RD 0.2
[t a 0.1
g g .05
l5 0.02
Single Pulse
IO-l 1
Square Wave Pulse Duration (sec)
N otes ,
1. Duty Cycle, D = T;
2. Per Unit Base = RNA = 130°CNV
3, Ta, - TA = PDMZmJAm
4. Surface Mounted
10 100 600
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Single Pulse
10-2 IO-l
Square Wave Pulse Duration (sec)
Document Number: 70971
S-61831-Rev, A, 23-Aug-99
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