SI3457DV ,30-V (D-S) Single FaxBack 408-970-5600S-56944—Rev. C, 23-Nov-982-1Si3457DVVishay Siliconix
SI3457DV
30-V (D-S) Single
Si3457DV
VISHAY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
30 0.065 @VGS =-10V ce4.3
- 0.100@VGs=-A.5V 21:34
TSOP-6
Top View
(3)G "T
(1,2, 5, 6)D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos -30
Gate-Source Voltage VGS i 20
TA = 25°C i4.3
Continuous Drain Current (TJ = 150°C)a ID
TA = 70°C l 3.4
Pulsed Drain Current 'DM $20
Continuous Source Current (Diode Conduction)" IS -1.7
TA = 25°C 2
Maximum Power Dissipationa PD W
TA = 70°C 1.3
Operating Junction and Storage Temperature Range To, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient" RthJA 62.5 'CAN
a. Surface Mounted on FR4 Board, t s 5 sec.
Document Number: 70644
S-56944-Rev. C, 23-Nov-98
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Si3457DV
VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) Vos = VGs, ID = -250 11A -1.0 V
Gate-Body Leakage lsss Vros = O V, VGS = d: 20 V i 100 nA
Zero Gate Voltage Drain Current IDSS N/ras = -30 V, VGS = 0 V -1 ILA
Vros=-30V,Vss=0V,To=700C -5
On-State Drain Currenta low”) VDS = -5 V, VGS = -1 0 V -1 5 A
VGS = -10 V, ID = -A.3 A 0.065
Drain-Source On-State Resistancea rDs(0n) Q
VGs=-4.5V, k3=-3.4 A 0.100
Forward Transconductancea gfs VDS = -15 V, ID = -A.3 A 6 S
Diode Forward Voltage" VSD ls = -1.7 A, VGS = 0 V -1.2 V
Dynamicb
Total Gate Charge Q9 11 20
Gate-Source Charge Qgs VDs = -15 V, VGS = -1 0 V, ID = -4.3 A 2.2 nC
Gate-Drain Charge di 1.7
Turn-On Delay Time tdwn) 7 15
Rise Time tr VDD=-15V, RL=15Q 11 20
Turn-Off Delay Tlme tam) ID 2 -1 A, VGEN = -1 0 V, Re = 6 Q 30 50 ns
Fall Time k 11 20
Source-Drain Reverse Recovery Time trr IF = -1.7 A, di/dt = 100 Alps 50 80
a. Pulse test; pulse width 5 300 us. duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
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Document Number: 70644
S-56944-Rev. C, 23-Nov-98
VISHAY
Si3457DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
20 I I I
VGs = IO, 9, 8, 7, 6, 5V
a? 4 V a:"
E 12 J E
's ,,p'''"''''" S
- 4 3 V _
0 1 2 3 4 5 6
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
A 0.16
tf 'ir-','
g 0.12 o) 8
il:'' VGS = 4.5 v 'ti
t o 08 _......,,---'''''''''''''' tli,r
. --" = -
Js o......-"'" VGS 10 V l
sf.?, o
9 0.04
0 4 8 12 16 20
ID - Drain Current(A)
Gate Charge
VDS = 15 V
ID = 4.3 A
g 6 g Ci"
b' / Ei fl]
a a '7;
<0 / n: g
g 4 c': fl
a', / O V
'i' / E
(l) 2 g
O 3 6 9 12
A, - Total Gate Charge(nC)
Transfer Characteristics
TC = -55''C
125°C -
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Capacitance
T''''"'"""----
N, Coss
ss,,,.,,.
"s--.......,,...,
0 6 12 18 24 30
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
- VGS = 10 V /
ID = 4.3 A ,,,,/'''"
p,,,,,,,,,,-''''''"
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Document Number: 70644
S-56944-Rev. C, 23-Nov-98
www.vishay.com . FaxBack 408-970-5600
Si3457DV
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.20
To = 150 C A 0.16
Ci:] v (
g g 0.12
:1 (l)
S at 't
(,3) 8 0.08 ID = 4.3 A
I J‘ Ns.'
w sf.?..
- 5 0.04
0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.60 25
0.45 f 20\
S 0 30 l
, ID = 250 “A g 15 "
a 0.15 a N
a / t,
g .1 10
o 0.00 ss,
-0.15 ,/ 5 \
w,,,,,-''''''' "s.,
-0.3 0
-50 -25 0 25 50 75 100 125 150 0.01 0.10 1.00 10.00
T J - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
t g Notes:
E a -T-
3 E PDM
if, a 0.1 i
tD ID " _
(il fE -ly-1 tg t1
E 1. Duty Cycle, D = T,
25 2. Per Unit Base = RthA = 62.5“CNV
3. TJM - TA = ProMZtruA(t)
Single Pulse 4. Surface Mounted
10-4 1o-3 10-2 IO-l 1 10
Square Wave Pulse Duration (sec)
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