SI3457BDV ,P-Channel 30-V (D-S) MOSFETS-03661—Rev. B, 07-Apr-031Si3457BDVVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED) ..
SI3457BDV-T1 ,P-Channel 30-V (D-S) MOSFETS-40424—Rev. D, 15-Mar-043I− Source Current (A) V− Gate-to-Source Voltage (V) r− On-Resistance ( ..
SI3457BDV-T1 ,P-Channel 30-V (D-S) MOSFETS-40424—Rev. D, 15-Mar-042I− Drain Current (A)DI− Drain Current (A)DSi3457BDVVishay SiliconixTYPI ..
SI3457BDV-T1-E3 ,P-Channel 30-V (D-S) MOSFETS-40424—Rev. D, 15-Mar-044Normalized Effective TransientV Variance (V)GS(th)Thermal ImpedanceI− Dra ..
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SI3457BDV
P-Channel 30-V (D-S) MOSFET
VISHAY
Si3457BDV
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY otifisl'd
VDs(V) rpm.) (Q) ID (A) .tttlt, Cis''
0.054 @ VGs = -10 V -5.0 9
0.100@VGS= -4.5 V -3.7
TSOP-6
Top View (4) S
LE 1 e TI
(3) G 'T
3mm m 2 s TI
LE s 4 TI
(1, 2, 5, 6) D
_ 2.85 mm _ P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS -30
Gate-Source Voltage N/ss $20
TA: 25°C -5.0 -3.7
Continuous Drain Current (T J = 150°c)a ID
TA = 70°C -4.0 -3.0
Pulsed Drain Current IBM 20
Continuous Source Current (Diode Conduction)" ls -1.7 -0.95
TA=25°C 2.0 1.14
Maximum Power Dissipation" PD W
a-- 70°C 1.3 0.73
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 53 62.5
Maxi J tion-to-Ambient" R
axlmum uncuon o m Ien Steady State WA 90 110 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 25 36
a. Surface Mounted on 1" x l" FR4 Board.
DocumentNumber: 72019 www.vishay.com
S-03661-Rev. B, 07-Apr-03
Si3457BDV
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(lh) I/tos = VGS, ID = -250 “A -1.0 -3 V
Gate-Body Leakage less VDs = 0 V, VGS = $20 V cl: 100 nA
VDS=-24V,VGS=0V -1
Zero Gate Voltage Drain Current loss 11A
Vos-- -24V,VGS=OV,TJ=85°C -5
On-State Drain Currenta ID(on) Vos 2 -5 V, VGS = -10 V -20 A
VGS = -10 V, ID = -5.0 A 0.044 0.054
Drain-Source On-State Resistance" rDS(on) Q
VGS = -4.5 V, ID = -3.7A 0.082 0.100
Forward Transconductancea gfs VDS = -15 V, ID = -5.0 A 10
Diode Forward Voltagea VSD ls = -1.7 A, VGs = 0 V -0.8 -1.2 V
Dynamich
Total Gate Charge O9 12.5 19
Gate-Source Charge Qgs VDS = -15 V, VGS = -10 V, ID = -5.0 A 2.1 nC
Gate-Drain Charge di 3.5
Turn-On Delay Time td(on) 7 15
RiseTime tr 1/roo=-15V,RL--150 10 15
Turn-Off Delay Time tu(ott) ko E -l A, VGEN = -10 V, Rs = 6 Q 30 45 ns
Fall Tlme tr 22 35
Source-Drain Reverse Recovery Time trr IF = -1.7 A, di/dt = 100 Alps 25 60
a. Pulsetest; pulse width s 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
20 ',,,,,e','f''r I 20
, A VGS=10thru5V
E' 12 E 12
it , i,,
E 4 V .E
S 8 E 8
CI /-7 CI
o "-""'" o
_ 4 / _ 4
0 1 2 3 4 5 6 0 1 2 3 4 5
Vos - Drain-to-Source Voltage (V) Ves - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 72019
2 S-03661-Rev. B, 07-Apr-03
VISHAY
Si3457BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
fit 0.16
g 0.12
t VGS = 4.5 V ,,,,,/'"
' 0.08
ih" VGS = 10 V
0 4 8 12 16 20
ID - Drain Current (A)
Gate Charge
10 _ _ ,
VDS = 10 v
s. ID = 5 A
o 2 4 6 8 10 12 14
09 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
T J = 150°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V30 - Source-to-Drain Voltage(V)
C - Capacitance (pF)
rDs(0n) - On-Resistance(§2)
I’Dsmn) - On-Resistance (9)
(Normalized)
Capacitance
1ssss. Ciss
600 "mm-_,
200 "ss,
'mm--,
0 6 12 18 24 30
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 l _
VGS = 10 V
ID = 5 A
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
ID = 2 A ID = 5 A
0.08 (
0 2 4 6 8 10
V68 - Gate-to-Source Voltage (V)
Document Number: 72019
S-03661-Rev. B, 07-Apr-03
www.vishay.com
Si3457BDV f,,sWAir'
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.6 /''' 50 l
0.4 /''' 40 (
S' ID = 250 WA 'w'''' I
, 0.2 I E 30 ,
g w''" v I
S' g 1
gi" 0 0 fi] 20
i7i" .
-0 2 // 't
" 10 t 'N,
-0.4 0
-50 -25 0 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600
To - Temperature (°C) Time (sec)
Safe Operating Area
IDM Limited
rosmn) Limited
10 P(t) = 0.0001
g 1 P(t) = 0.001
E D(on) =
I' Limited P(t) 0.01
r', c P(t) = 0.1
- TA = 25'' =
0.1 Single Pulse P(t) 1
P(t) = 10
BVDSS Limited
0.1 1 10 100
Vos - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
g Duty Cycle = 0.5
a), g, 0.2
'if,' g Notes:
tr, E 0.1 -T-
g F, 0.1 PDM
g L t2
a 1. Duty Cycle, D = T1
2. Per Unit Base = RthJA = 90°CNV
. 3. Tou - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 72019
4 S-03661-Rev. B, 07-Apr-03
“5% Si3457BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 72019 www.vishay.com
S-03661-Rev. B, 07-Apr-03 5
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