SI3447DV ,P-Channel 1.8-V (G-S) MOSFETS-59646—Rev. A, 28-Sep-982-1Si3447DVVishay SiliconixSPECIFICATIONS (T =25C UNLESS OTHERWISE NOTED) ..
SI3454ADV ,30-V (D-S) Single FaxBack 408-970-5600S-99548—Rev. A, 20-Dec-992-1Si3454ADVNew ProductVishay Siliconix
SI3447DV
P-Channel 1.8-V (G-S) MOSFET
VISHAY
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.050@VGS= -4.5v i5.2
-12 0.070@VGS= -2.5v i4.4
0.095@sz= -1.8V i3.8
TSOP-6
Top Mew
LE TI (3) G 'T
3 mm m 2 5 TI
m s 4 TI
(1, 2, 5, 6) D
P-Channel MOSFET
Si3447DV
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS -12
Gate-Source Voltage VGS i 8
TA = 25°C ch 5.2
Continuous Drain Current (T J = 150°C)3, b ID
TA = 70°C $4.1 A
Pulsed Drain Current IDM $20
Continuous Source Current (Diode Conduction)' b ls - 1 .7
TA = 25°C 2.0
Maximum Power Dissipation' b PD W
TA = 70°C 1.3
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 "C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 62.5
Maximum Junction-to-Ambienta RthJA '"WNN
Steady State 106
a. Surface Mounted on FR4 Board.
b. t s 5 sec.
Document Number: 70819
S-59646-Rev. A, 28-Sep-98
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Si3447DV
VISHAY
Vishay Siliconix
SPECIFICATIONS ITU =25°c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) VDS = VGS, ID = -250 pA -(h45 V
Gate-Body Leakage lsss VDS = 0 V, VGS = i 8 V i 100 nA
1/Ds=-9.6V,VGs=0V -1
Zero Gate Voltage Drain Current loss liA
VDS=-9.6V,VGS=0V,TJ=7O°C -5
On-State Drain Currenta low”) VDS 2 -5 V, VGS = -4.5 V - 15 A
VGS = -4.5 V, ID = -5.2 A 0.040 0.050
Drain-Source On-State Resistancea roam) VGS = -2.5 V b = -4.4 A 0056 th070 Q
VGS = .13 V, lo = -2.OA 0.072 0.095
Forward Transconductancea gfs VDS = -10 V, ID = -5.2 A 15 S
Diode Forward Voltagea I/sro Is = -1.7 A, VGs = 0 V 0.7 -1.2
Dynamicb
Total Gate Charge % 16 25
Gate-Source Charge Qgs VDs = -6 V, VGS = -4.5 V, ID = -5.2 A 3.5 nC
Gate-Drain Charge di 2.5
Turn-On Delay Time td(on) 20 40
Rise Time tr VDD = -6 V, RL = 10 Q 45 90
Turn-Off Delay Time tam ID _ -1 A, VGEN = -4.5 V, Rs = 6 Q 100 200 ns
Fall Tlme tf 75 150
Source-Drain Reverse Recovery Time trr IF = -1.7 A, di/dt = 100 Alps 60 100
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width 5 300 MS. duty cycle 5 2%.
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Document Number: 70819
S-59646-Rev. A, 28-Sep-98
VISHAY
Si3447 DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
16 js,
t VGS = 5 thru 3 V
.cjC:'.". y Ct
st, 12 , 2V tr,
<3 w" 8
'E 8 j-],
f 1.5 V f
0 1 2 3 4
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20 _ _
I/ss = 1.8 V
a 0.16
8 j b..
E 0 12 8
a; VGS = 2.5 V 8
' 0.08 I 0
ll" o,,,,-'''" _..............,----')'"" D
if - VGS = 4.5 V
" 0.04
0 4 8 12 16 20
ID - Drain Current (A)
Gate Charge
Ws = 6 v v,,/'''
si-,-'; 4 7 ko-- 5.2 A A
J? / g E"
a; "a' ID
L' 3 17: .5
f) w,,/'''" (i g
S? O 0
g 2 I ' \z/
0 4 8 12 16
% - TotalGate Charge(nC)
Transfer Characteristics
T1c=~55°1C//
12 25''C ‘v//
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage(V)
Capacitance
2000 Ciss
's-a,...-,
1000 (
'ss,,..,...,
0 3 6 9 12
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.50 I l
VGS = 4.5 V
ID = 5.2 A
0.75 s,,,,,,,-'''''
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature CC)
Document Number: 70819
S-59646-Rev. A, 28-Sep-98
www.vishay.com
Si3447DV
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
ID: 5.2 A
Iss...,
2 3 4 5
VGS - Gate-to-Source Voltage (V)
Single Pulse Power
A 0.16
I' TJ=150°C Sl 0.12
Js' 8 0.08
‘8 0.04
0.00 0.25 0.50 0.75 1.00 1.25 1.50 o
VSD - Source-to-Drain Voltage(V)
Threshold Voltage
0.4 25
/ 20 (
g 0.2 ",,p''''
g w''''' E
= |D=2500A '-
g 'w''' g
"iz'." J? IO
',,w''''' 5
-0.2 o
-50 -25 0 25 50 75 100 125 150 0.01
TJ - Temperature CC)
1 10 100 600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
t' g 0.2
t3 g 0.1
$5 0.1
EB 0.05
'-is'-
'c5 0.02
Single Pulse
10'4 10-3 10-2 IO-l 1
Square Wave Pulse Dureation (sec)
N otes:
-ly-1 _
1. Duty Cycle, D = T2
2, Per Unit Base = RNA = 106°C/w
3. TJM - TA = PDMzthJAm
4. Surface Mounted
10 100 600
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Document Number: 70819
S-59646-Rev. A, 28-Sep-98
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