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SI3443DVTRPBF
-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
International
Tait Rectifier
PD-95240
Si3443DVPbF
HEXFET® Power MOSFET
0 Ultra Low On-Resistance D 1 ' .6 D
o P-Channel MOSFET - -
. Surface Mount DEJ W L VDSS - 20V
q Available in Tape & Reel l I D
0 -2.51/ Rated D13 4
o Lead-Free G S RDS(on) = 0.065Q
Top View
Description
These P-channel MOSFETs from International Rectiher
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFETO power MOSFET with RDSM) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's uniquethermaldesign and RDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23. TSOP-6
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain- Source Voltage -20 V
ID @ TA = 25''C Continuous Drain Current, Vss @ -4.5V -4.4
ID @ TA-- 70°C Continuous Drain Current, VGS @ -4.51/ -3.5 A
IDM Pulsed Drain Current (D -20
PD @TA = 25''C Power Dissipation 2.0 W
Pro @TA = 70°C Power Dissipation 1.3
Linear Derating Factor 0.016 W/°C
EAS Single Pulse Avalanche Energy© 31 mJ
VGS Gate-to-Source Voltage 1 12 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient® 62.5 °C/W
1
08/31/05
Si3443DVPbF
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage -20 - - V Was = 0V, ID = -250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - -0.005 - V/°C Reference to 25°C. ID = -1mA
- 0.034 0.065 VGS = -4.5V, ID = -4.4A ©
Rrsom Static Drain-to-Source On-Resistance - 0.053 0.090 g Vss = -2.7V, ID = -3.7A ©
- 0.060 0.100 Vss = -2.5V, ID = -3.5A ©
VGS(th) Gate Threshold Voltage -0.60 - -1.2 V Vos = I/cs, ID = -250pA
9ts Forward Transconductance - 12 - S Vos = -1OV, ID = -4.4 A
loss Drain-to-Source Leakage Current : : li' pA VS: , Jg', x2: , g, TJ = 70°C
less Gate-to-Source Forward Leakage - - -100 n A l/ss = -12V
Gate-to-Source Reverse Leakage - - 100 Vss = 12V
% Total Gate Charge - 11 15 ID = -4.4A
Qgs Gate-to-Source Charge - 2.2 - nC Vos = -10V
di Gate-to-Drain ("Miller") Charge - 2.9 - VGS = -4.5V ©
td(on) Turn-On Delay Time - 12 50 VDD = -10V, VGS = -4.5V ©
tr Rise Time - 33 60 ns ID = -1.0A
td(off) Turn-Off Delay Time - 70 100 Rs = 6.0 Q
tf Fall Time - 72 100 RD = 10 fl, ©
Ciss Input Capacitance - 1079 - VGS = 0V
Coss Output Capacitance - 220 - pF Vos = -10V
Crss Reverse Transfer Capacitance - 152 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.0 A showing the
ISM Pulsed Source Current - - -20 integral reverse G
(Body Diode) OD p-n junction diode. S
VSD Diode Forward Voltage - - -1.2 V To = 25°C, IS = -1.7A, VGS = 0V ©
trr Reverse Recovery Time - 51 77 ns To = 25°C, IF = -1.7A
Q,, Reverse Recovery Charge - 30 44 nC di/dt = -100Alps ©
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature.
C) Pulse width I 300ps; duty cycle S 2%.
Surface mounted on FR-4 board, t S Ssec.
Starting Tu = 25°C, L = 6.8mH
Rs = 259, lAs = -3.0A.
