SI3442BDV ,N-Channel 2.5-V (G-S) MOSFETS-40424—Rev. C, 15-Mar-041Si3442BDVVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED) ..
SI3442BDV-T1-E3 ,N-Channel 2.5-V (G-S) MOSFETS-40424—Rev. C, 15-Mar-041Si3442BDVVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED) ..
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SI3442BDV
N-Channel 2.5-V (G-S) MOSFET
VISHAY
Si3442BDV
Vishay Siliconix
N-Channel 2.5-v (G-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.057 © biss = 4.5 v 4.2
20 0.090 © kss = 2.5 v 3.4
TSOP-e (1, 2, 5, 6) D
Top View
I CE 1 e m
3 mm 2 5 TI
LE (3) G OJ
LE a 4 TI
_ 2.85 mm _
Ordering Information: Si3442BDV-T1-E3
Marking Code:
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS 20
Gate-Source Voltage VGS d: 12
TA = 25''C 4.2 3.0
Continuous Drain Current (T J = 15ty'CP ID
TA = 70°C 3.4 2.4
Pulsed Drain Current IBM 20
Continuous Source Current (Diode Conduction)a Is 1.4 0.72
TA = 25°C 1.67 0.86
Maximum Power Dissipation" PD W
TA = 70"C 1.07 0.55
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t S 5 sec 75 100
Maxi J tion-to-Ambienta R
axlmum unc lo" o m len Steady State thJA 120 145 ''C/W
Maximum Junction-to-Foot (Drain) Steady State Rmur: 70 85
a. Surface Mounted on FR4 Board, t s 5 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72504
S-40424-Rev. C, 15-Mar-04
www.vishay.com
Si3442BDV
Vishay Siliconix
IE=7'"
VISHAY
SPECIFICATIONS tTa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = Vas, ID = 250 ps/k 0.6 1.8 V
Gate-Body Leakage less VDs = 0 V, VGS = i 12 V i 100 nA
VDs=20\/,VG3=OV 1
Zero Gate Voltage Drain Current 'Dss WA
VDs--20V,Vcs--0V,TJ--700C 5
On-State Drain Currenta VDs = 5 V, Ves = 4.5 V 10
On-State Drain Currenta D(on) VDS = 5 V, VGS = 2.5 V 4
I/ss = 4.5 v, ID = 4 A 0.045 0.057
Drain-Source On-State Resistancea rDS(on) Q
VGS = 2.5 V, ID = 3.4 A 0.070 0.090
Forward Transconductancea gfs VDS = 10 V, b = 4.0 A 11.3
Diode Forward Voltagea VSD ls = 1.6 A, VGS = O V 0.75 1.2 V
Dynamicb
Total Gate Charge Q9 3 5
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 4.0 A 0.65 nC
Gate-Drain Charge di 0.95
Gate Resistance Rg f = 1 MHz 2.7 Q
Turn-On Delay Time td(on) 35 55
Rise Time tr VDD = 10 V, RL = 10 Q 50 75
Turn-Off Delay Time IMO") ID _ 1 A, VGEN = 4.5 V, R9 = 6 Q 20 30 ns
Fall Time tf 15 25
Source-Drain Reverse Recovery Time trr IF = 1.6 A, di/dt = 100 A/us 30 60
a. Pulse test; pulse width s 300 ps, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
20 _ _ 2O
VGS = 5 thru 3.5 V I l /'
y To = -55t y
16 3 V 16
t"'''"" 25°C /
'ii' 12 "ii 12 I I
t tz 125°C
c 2.5 V c
Es 8 E' 8
- 4 - 4
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 72504
2 S-40424-F%v. C, 15-Mar-04
VISHAY
Si3442BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
Vss = 4.5 V
'Dsmn) — On-ReSIstance ( Q)
0 4 8 12 16 20
ID - Drain Current(A)
Gate Charge
vDs=1ov
lro=4A /
VGS — Gate-to-Source Voltage (V)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
Tu = 150°C
- 0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
(Normalized)
rDS(on) — On-Resiistance
rDS(0n) — On-Resistance (Q)
Capacitance
400 l,
320 ‘\
160 \ _ss,
80 t) 0055
'ss.......,
0 4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.4 l _
vss = 4.5 V
ID = 4 A ""''
0.8 o,,i''''
-50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
0.08 k
o 1 2 3 4 5 6 7 8
VGS - Gate-to-Source Voltage (V)
Document Number: 72504
S-40424-Rev. C, 15-Mar-04
www.vishay.com
Si3442BDV 'Gai';
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.2 "s,
0.1 "s, 6 It
ID = 250 HA l
i,' -0.0 N TA = 25°C
2 , Single Pulse
9 -0 1 V N
> 's,, g N
A -0 2 c o i
s. o. i
il'" "ss, 'N
> -0 3 'ss, N
-0.4 C 2 _
\~---u.
-0.5 ‘-...-.I
-0.6 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
To - Temperature (''C) Time (sec)
Safe Operating Area
roman, Limited ke Limited
E 100 us
c 1 ms
D, 10 ms
0 T 25°C I I l l l l
0.1 Single Pulse 100 ms
dc, 100 s, 10 s, 1s
BVDSS Limited -
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
E Duty Cycle = 0.5
"'ii' g Notes:
E g -T-
8 a 0.1 POM
2 ,5 k
E tl v-
B _'L_ ta t1
a 1. Duty Cycle, D = T
2. Per Unit Base = RNA = 120°C/W
. 3. TJM - TA = PDMZthJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 72504
4 S-40424-F%v. C, 15-Mar-04
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