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SI3434DV
N-Channel 30-V (D-S) MOSFET
VISHAY
Si3434DV
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
30 0.034@VGS=4.5V 6.1
0.050 @ sz = 2.5 v 5.0
TSOP-6
Top View
3mm LE, 5D]
[Ella 4D]
FEATURES
. TrenchFET© Power MOSFET
. 2.5-V Rating for 30-V N-Channel
. Low roam) for Footprint Area
APPLICATIONS
o Li-Ion Battery Protection
(1,2, 5, 6)D
(3)G o-]
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage V95 30
Gate-Source Voltage VGS i 12
TA = 25°C 6.1 4.6
Continuous Drain Current (To = 150°c)a ID
TA = 70°C 4.9 3.6
Pulsed Drain Current IBM 30
Continuous Source Current (Diode Conduction)" Is 1.7 1.0
TA=25°C 2.0 1.14
Maximum Power Dissipation" PD W
TA=70°C 1.3 0.73
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 40 62.5
Maximum Junction-to-Ambienta R
Steady State thJA 90 110 ''C/1N
Maximum Junction-to-Foot (Drain) Steady State RthJF 25 30
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71610 www.vishay.com
S-03617-Rev. A, 17-Apr-01
Si3434DV
VISHAY
Vishay SiliConix New Product
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA 0.6 V
Gate-Body Leakage less VDs = 0 V, VGS = l 12 V d: 100 nA
VDs=24V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS WA
VDS=24V,VGS=0V,TJ=7O°C 5
On-State Drain Currenta |D(on) Vos 2 5 V, VGS = 4.5 V 30 A
VGS = 4.5 V, ID = 6.1 A 0.028 0.034
Drain-Source On-State Resistancea rDs(on) Q
V63 = 2.5 V, ID = 2A 0.042 0.050
Forward Transconductancea 9ts Vos = 10 V, ID = 6.1 A 20 S
Diode Forward Voltage" I/sro Is = 1.7 A, Veg = 0 V 0.8 1.2
Dynamicb
Total Gate Charge % 8 12
Gate-Source Charge Qgs Vos = 15 V, VGS = 4.5 V, ID = 6.1 A 1.9 nC
Gate-Drain Charge di 2.6
Turn-On Delay Time td(on) 21 40
Rise Time tr VDD = 15 v, RL = 15 Q 45 90
Turn-Off Delay Time td(ott) ko E 1 A, VGEN = 4.5 V, Rs = 6 Q 40 80 ns
Fall Tlme k 30 60
Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 Alps 40 80
a. Pulsetest; pulse width 5 300 us, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
30 _ l 30 l ,
(f VGS =10thru 3.5 V 3 V To = -55'C
24 f (f 24 25°C \ (Y
iii;". y Ci] y 125°C
E 18 E 18
S 2.5 V 's
S 12 E 12
_ 6 2 v - - 6 I
0 1 2 3 4 5 0 1 2 3 4
Ws - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71610
S-03617-Rev. A, 17-Apr-01
VISHAY
Si3434DV
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
Si 0 08 I
8 0.06
0.: VGS = 2.5 V /
I 0 04 a.,......,.,,,.,----'"
E" VGS = 4.5 V
O 5 IO 15 20 25 30
ID - Drain Current (A)
Gate Charge
VDS=15V /
lro=6.1A /
b':, /
i'i'i2/
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ = 150°C
ls — Source Current (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Vso - Source-to-Drain Voltage (V)
roam) — On-Resistance (£2) C — Capacitance(pF)
roman) - On-Resistance (9
(Normalized)
Capacitance
1000 I
1K2 Coss
0 5 10 15 20 25 30
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1-6 l 1
VGS = 4.5 V
ID = 6.1 A
1.4 //
IQ ,,,,,,,,,W''''''''''
0.8 w.,,,,,--'''''''''''''
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
ID = 2 A (
ID = 6.1 A
O 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Document Number: 71610
S-03617-Rev. A, 17-Apr-01
www.vishay.com
Si3434DV VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.30 50
0.15 40
ID = 1 mA I
i) 0.00 1
o g 30
‘E "ssc V
g A) 15 g \
5 tl. 20
0 -0.30 ''sc \
A) 45 10
-C60 0
-50 -25 0 25 50 75 100 125 150 10-3 1o-2 10-1 1 10 100 600
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
f, Duty Cycle = 0.5
I' a 0.2
ilr', ' th1 T
u L 0.1 PDM
Iz'jz' l
g -21 t2 t
a 1. Duty Cycle, D = T1
2. Per Unit Base = RNA = 90°CIW
. 3. TJM - TA = PDMZIhJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
5 Duty Cycle = 0.5
3% 0.2
if',' g
tt a 0.1
Ie Pulse
1o-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71610
4 S-03617-Rev. A, 17-Apr-01
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