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SI3433DV
P-Channel 1.8-V (G-S) MOSFET
VZISHAY Si3433
New Product Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY otfJ'd
VDs(V) rosmmm) ID (A) .vttt,',tJ5it' 6
0.042@Vss= -4.5 v -515 9066 .tl 3‘9
-20 0.057@VGs= -2.5 v -4.8 I.W'
0.080@Vss-- -1.8 v -4.1
TSOP-6
Top View
m 1 6 TI (3)G 'T
3mm CE 2 5 TI
CE 3 4 TI
_ 2.85 mm _ (1,2,5,6)D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS -20
Gate-Source Voltage VGS i8
TA=25°C -5.6 -4.3
Continuous Drain Current (T J = 150°C)3 ID
TA=85°C -4.1 -3.1
Pulsed Drain Current IBM -20
Continuous Diode Current (Diode Conduction)" ls -1.7 -0.9
TA = 25°C 2.0 1.1
Maximum Power Dissipationa PD W
TA = 85°C 1.0 0.6
Operating Junction and Storage Temperature Range To, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 45 62.5
Maximum Junction-to-Ambienta Steady State RthJA 90 110 ''C11N
Maximum Junction-to-Foot (Drain) Steady State RthJF 25 30
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71160 www.vishay.com
S-00624-Rev. A, 03-Apr-00 2-1
Si3433
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(lh) I/tos = VGS, ID = -250 “A -0.45 V
Gate-Body Leakage less Vos = 0 V, VGS = l 8 V cl: 100 nA
VDs=-16V,VGs=0V -1
Zero Gate Voltage Drain Current loss “A
Vos=-16V,Vss--0V,T,j=85l -5
On-State Drain Currenta ID(on) VDS = -5 V, VGS = -4.5 V -20 A
VGS = -4.5 V, ID = -5.6 A 0.025 0.042
Drain-Source On-State Resistancea rrosean) VGs = -2.5 V, ID = -4-3A 0.048 0.057 Q
VGS = -1.8 V, ID = -1 A 0.066 0.080
Forward Transconductancea gfs VDs = -5 V, ID = -5.6 A 16
Diode Forward Voltagea VSD ls = -1.7 A, VGS = 0 V -0.7 -1.2 V
Dynamicb
Total Gate Charge % 11.5 17
Gate-Source Charge Qgs Vros = -10 V, VGS = -4.5 V, ID = -5.6 A 3 nC
Gate-Drain Charge di 1.7
Turn-On Delay Time tam) 18 36
Rise Time tr VDD = -10 V. RL = 10 Q 25 50
Turn-Off Delay Time tam“, ID _ -1 A, VGEN = -4.5 V, Re = 6 C2 80 160 ns
Fall Time tr 45 90
Source-Drain Reverse Recovery Tlme trr IF = -1.7 A, di/dt = 100 Alps 30 50
a. Pulsetest; pulse width S 300 us, duty cycle S 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
20 l 1 l 20
I/ss = 5 thru 2.5 V I l /
TC = -55''C y
16 I 16 '25oc 1
<3 _iaC:'.,
§ 12 2V - g 12 / 125°C
(i, 8 f w''''' 'E 8
Cl I I o
- 4 1.5 v - - 4
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71160
2-2 S-00624-Rev. A, 03-Apr-00
VISHAY
Si3433
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
0.15 l l
V63=1.8V
I’Dsmn) - On-Resistance ( £2)
0.06 VGS = 2.5 V l
_.....,..--'''''"
- VGS = 4.5 V
0 4 8 12 16 20
ID - Drain Current(A)
Gate Charge
Vros=10V
lro=5.6A
3 ",,,p'''''
1 o,,,,,''''''
O 3 6 9 12
09 - TotaIGate Charge(nC)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
TJ =150°C
Is - Source Current(A)
T: = 25''C
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V30 - Source-to-Drain Voltage(V)
C - Capacitance (pF)
rDs(0n) - On-Resistance(§2)
I’Dsmn) - On-Resistance (9)
(Normalized)
Capacitance
500 l 's. Coss
"'---,.
0 Crss
0 4 8 12 16 20
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 I _
VGS = 4.5 V
ID = 5.6 A
1.4 ,,,,W'''''
1 2 s,,,,,,,,,,,,,,,,-"'''''''
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
0.09 ID = 5.6 A
0.06 ''ss,,s.,
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Document Number: 71160
S-00624-Rev. A, 03-Apr-00
www.vishay.com
Si3433
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4 30
0.3 l 24
ID = 250 “A
ty 0.2
E it 18
E 0.1 / 5 - o
A 'pr'''" ii TA 25 C
fi, tl. 12
8 o o N
-0.1 ,/ 6 \
-0.2 0
-50 -25 0 25 50 75 100 125 150 10-2 10-1 1 10 100 600
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
li' Duty Cycle = 0.5
g E 0.2
"if',' E
it ' th1 J,,,-,
T7 L th1 DM
I': E 1
g -21 t2 t
a 1. Duty Cycle, D = T1
2. Per Unit Base = RNA = 360°CIW
. 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
5 Duty Cycle = 0.5
Il a 0.2
"if',' g
tt , 0.1
'i' I? 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71160
2-4 S-00624-Rev. A, 03-Apr-00
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