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SI2312DS
N-Channel 20-V (D-S) MOSFET
VISHAY
Si2312DS
New Product
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.033 @ l/ss = 4.5 v 4.9
20 0.040 @ vGS = 2.5 v 4.4
0.051 ©Vss-- 1.8 v 3.9
TO-236
(SOT-23)
wrl wrtsis
Top View
Si2312DS (C2)*
'Marking Code
-l- 3 D
£13313
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 sec Steady State Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS d: 8
TA-- 25°C 4.9 3.77
Continuous Drain Current (TJ = 150°C)a b
TA-- 70"C 3.9 3.0
Pulsed Drain Currentb IBM 15
Avalanche Currentb IAS 15
. L = 0.1 mH
Single Avalanche Energy EAS 11.25 m]
Continuous Source Current (Diode Conduction)a Is 1.0 A
TA-- 25°C 1.25 0.75
Power Dissipationa PD W
TA-- 70°C 0.80 0.48
Operating Junction and Storage Temperature Range Ts Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 75 100
Maximum Junction-to-Ambient" R
Steady State WA 120 166 'CAN
Maximum Junction-to-Foot Steady State Rthur: 40 50
a. Surface Mounted on I" x I" FR4 Board.
b. Pulse width limited by maximum junction temperature
Document Number: 71338
S-2109(r-Rev. C, 01-Jun-02
www.vishay.com
Si2312DS “3%
Vishay Siliconix New Product
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 WA 20
Gate-Threshold Voltage Vegan) VDS = Vss, ID = 250 11A 0.45 0.65 0.85
Gate-Body Leakage less VDS = 0 V, VGS = ck 8 V i 100 nA
1/Ds=16V,VGs=0V 1
Ze o Gate V Ita e D ain C ent I
r o g r I urr DSS Vros=16V,Vss=0V,Tu=70c'C 75 "A
On-State Drain Currenta bon) VDS 2 10 V, N/ss = 4.5 V 15 A
VGS = 4.5 V, ID = 5.0A 0.027 0.033
Drain-Source On-Resistancea rDs(on) VGS = 2.5 V, ID = 4.5A 0.033 0.040 Q
VGS =1.8 V, ID = 4.0A 0.042 0.051
Forward Transconductancea gfs VDs = 15 V, ID = 5.0 A 40 S
Diode Forward Voltage VSD ls = 1.0 A, VGS = 0 V 0.8 1.2 V
Dynamicb
Total Gate Charge Qg 11.2 14.0
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 5.0 A 1.4 nC
Gate-Drain Charge di 2.2
Switching
Turn-On Delay Time thon) 15 25
Rise Time tr VDD =10 V, RL =10 Q 40 60
Turn-Off Delay Time td(ott) b - 1.0 A, VGEN = 4.5 V, Rs = 6 Q 48 70 ns
FalI-Tlme tf 31 45
Source-Drain Reverse Recovery Time trr IF = 1.0 A, dildt = 100 Alps 13 25
a. Pulse test: PW s300 us duty cycle s2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
VGS = 4.5 thru 2.0 V
if: 1.5 v ,.e,-f:
C 9 c 9
S 6 E 6
I I Tc = 125°C
_ 3 - 3
0.5 V 25°C Af,
1.0 v \ -55''C
0 1 2 3 4 0.0 0.5 1.0 1.5 2.0
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71338
2 S-21090-Reu. C, 01-Jun-02
VISHAY
Si2312DS
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
rDS(on) — On-Resistance( Q)
ID - Drain Current (A)
Gate Charge
Vros=10V
ID=5.0A
,,,w'''"
2 o,,,W''''
VGS — Gate—to—Source Voltage (V)
0 4 8 12 16 20
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ=150DC
Is — Source Current(A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V50 - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDS(on) - On-Resistance (Q)
rDS(on) — On-Resistance ( 9)
(Normalized)
Capacitance
- Crss\
4 8 12 16 20
I/os - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
l _4_LV
1.63;” ///
w'''''
-50 -25 0 25 50 75 100 125 150
T J - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
b = 5.0A
2 4 6 8
VGS - Gate-to-Source Voltage (V)
Document Number: 71338
S-21090-Rev. C, 01-Jun-02
www.vishay.com
Si2312DS VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.2 12
0.1 "ss,,,, 10 (
ID = 250 “A l;
Ct -0 o s
E N. " TA = 25°C
g -0 1 g 6
i7i" n
f -0.2 4 ls,
- \ 2 \
0 3 N "s
-0.4 o
-50 -25 0 25 50 75 100 125 150 th01 0.1 1 10 100 600
T: - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
, m 0.2
Eg Notes:
(i? 0.1 -,,C,
Ee th1 DM
'rrsr-
_.L: _
1. Duty Cycle, D = T,
2. Per Unit Base = Rth0A = 166°CIW
. 3. TJM - TA = PDMZthA“)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71338
4 S-21090-Reu. C, 01-Jun-02
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