SI2311DS ,P-Channel 1.8-V (G-S) MOSFETS-05831—Rev. A, 04-Mar-02 1Si2311DSNew ProductVishay Siliconix ..
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SI2311DS
P-Channel 1.8-V (G-S) MOSFET
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VISHAY
Si2311DS
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.045 © VGS = -45 v -3.5
-8 0.072 @ VGS = -2.5 v -2.8
0.120@VGs=-1.8V -2.0
TO-236
(SOT-23)
Top Mew
Si2311DS (c1)*
*Marking Code
FEATURES
. TrenchFET© Power MOSFET
APPLICATIONS
. Load Switch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 sec Steady State Unit
Drain-Source Voltage V03 -8
Gate-Source Voltage VGS 18
TA = 25°C -3.5 -31)
Continuous Drain Current (TJ = 150°C)3, b ID
TA = 70°C -2.8 Al.4 A
Pulsed Drain Current IDM -10
Continuous Source Current (Diode Conduction)' b ls -0.8 -0.6
b TA = 25°C 0.96 0.71
M im m P Di . . n a, P W
ax: u ower issipatio ) TA = 70°C D 0.62 0.46
Operating Junction and Storage Temperature Range To, Tsig -55 to 150 ''C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 100 130
Ma ' J tio -t -A be ta R
xlmum unC0 n 0 m I n Steady State thJA 140 175 mm
Maximum Junction-to-Foot (drain) Steady State RthJF 60 75
a. Surface Mounted on FR4 Board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71813 www.vishay.com
S-05831-Rev. A, 04-Mar-02
. I=7'"
Si2311DS VISHAY
Vishay Siliconix New Product
SPECIFICATIONS ITU = 25" c UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -10 WA -8
Gate-Threshold Voltage Vegan) VDS = VGs, ID = -250 11A Ah45 -0.8
Gate-Body Leakage less VDS = 0 V, VGS = d: 8 V i 100 nA
VDS = -64 V, VGS = 0 V -1
Zero Gate Voltage Drain Current loss “A
Vos-_/_-OV/il -10
I/rss ca-5 MN/ss---) -6
On-State Drain Currenta low”) A
VDS S -5 V, VGS = -2.5 V -3
N/ss = -A.5 V, ID = -3.5 A 0.036 0.045
Drain-Source On-Resistancea rDS(on) Veg = -2.5 V, ID = -3 A 0.058 0.072 Q
VGS = -1.8 V, ID = Ah? A 0.096 0120
Forward Transconductancea gfs Vos = -5 V, ID = -3.5 A 9.0
Diode Forward Voltage VSD Is = -0.8 A, VGS = 0 V -1.2 V
Dynamicb
Total Gate Charge Q9 8.5 12
- VDs=-AV,Vss=-4.5V
Gate Source Charge Q95 '0 - -3.5A 1.5 nC
Gate-Drain Charge di 2.1
Input Capacitance Ciss 970
Output Capacitance Coss Vos = -A V, Ves = 0, f= 1 MHz 485 pF
Reverse Transfer Capacitance Crss 160
Switchingb
tum) 18 25
Turn-On Tlme
tr Vors=-4 V,RL=4Q 45 65
ID E -1.OA, 1iuN---4.5)/ ns
td(off) RG = 6 Q 40 60
Turn-Off Time
tf 45 65
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW 5300 us duty cycle s2%.
C. Switching time is essentially independent of operating temperature,
www.vishay.com Document Number: 71813
2 S-05831-Rev, A, 04-Mar-02
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VISHAY
Si2311DS
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
1 l 1 1 l
VGS = 4.5 thru 2.5 V Tc = -551
10 , 10 1 I '
/ 25°C
Ci.". 8 , w--""''""" 2 v - ig" 8
E l / st, 125°C
's 6 / 5 6
o y /" o
C: 4 / 1.5 v - 0| 4
1, 0.5 V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V) N/ss - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
A 1250
I Ci? Ciss
.,ij. 8 1000 "s--...,,,.,.
é , 750 Coss
e (L 500 '''s,
h 250 V
0 2 4 6 8 10 12 0 2 4 6 8
ID - Drain Current (A)
Gate Charge On-Resistance vs. Junction Temperature
S VDs=4V //' VGS=4-5V ',,,-'"'
E |D=3.5 A / a |D=3.5 A s,,,,,,-''''''
fi? 6 g 1.2 I
g / g A ,,r'''"
q, 73 8 ,,,,w'''
f? w y
u? 4 I é g 1.0
S,', / o fl
$3 I v
8 / A ,,,,w''''''
U, 2 I .3 0.8 ,/
0 2 4 6 8 10 12 14 -50 -25 0 25 50 75 100 125 150
09 - Total Gate Charge (nC)
Transfer Characteristics
VDS - Drain-to-Source Voltage (V)
TJ - Junction Temperature CC)
Document Number: 71813
S-05831-Rev. A, 04-Mar-02
www.vishay.com
. I=7'"
Si2311DS VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
20 0.5
s. "C"
g 1 "ry, 0.3
8 O 0.2
I 0.1 A
U) E ( ID = 3.5 A
JP 0.1 ,
0.01 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8
I/so - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 l I 10
0.3 ID = 250 0A 8 '
9 ww'''''''' )
g ',,,i'''" g 6 "
g 0.1 g \
é CL 4
TA = 25°C
0 1 1/ 2
. "''" ''s,
-0.2 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000
To - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
g g 0.2 Notes:
g o. 0.1 PDM
E a t _
'rT, _ 1. Duty Cycle, D = T,
g 2. Per Unit Base = RM = 140°0/w
a 3. TJM - TA = PDMZthJAm
. 4. Surface Mounted
Single Pulse
10-4 1o-3 1O-2 IO-l 1 10 100 500
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71813
4 S-05831-Rev, A, 04-Mar-02
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