SI2308DS ,N-Channel 60-V (D-S) Rated MOSFET FaxBack 408-970-5600S-58492—Rev. A, 15-June-982-1Si2308DSVishay Siliconix
SI2308DS
N-Channel 60-V (D-S) Rated MOSFET
Si2308DS
Vishay Siliconix
VISHAY
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
60 0A6@VGs=10V 21:20
0.22@VGs=4.5V $1.7
TO-236
(SOT-23)
GI:_|_
Top View
Si2308DS (A8)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V03 60
Gate-Source Voltage VGs 3:20
TA = 25°C i2.0
Continuous Drain Current (To = 150°C)3 ID
TA = 70°C l 1.6 A
Pulsed Drain Currentb IBM 1: 10
Continuous Source Current (Diode Conduction)" Is 1.0
TA = 25°C 1.25
Maximum Power Dissipationa PD W
TA = 7000 0.80
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Maximum Unit
Maximum Junction-to-Ambient" 100
' . . thJA ''C/W
Maximum Junction-to-Ambient' 166
a. Surface Mounted on FR4 Board, t = :5 sec.
b. Pulse width limited by maximum junction temperature.
c. Surface Mounted on FR4 Board
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Document Number: 70797 www.vishay.com . FaxBack 408-970-5600
S-58492-Rev. A, 15-June-98 2-1
Si2308DS
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS Vos = 0 V, ID = 250 p.A 60 V
Gate-Threshold Voltage N/SS(th) Vos = VGS, b = 250 WA 1.5
Gate-Body Leakage IGSS Vos = 0 V, VGS = cl: 20 V l 100 nA
VDS = 60 V, VGS = 0 V 0.5
Zero Gate Voltage Drain Current IDSS uA
VD3=60V,VGS=0V,TJ=55°C 10
VD 24.5V,V =10V 6
On-State Drain Currenta 'D(on) S GS A
VDS 2_' 4.5 V,VGs=4.5V 4
VGS=1OV, ID=2.0A 0.125 th16
Drain-Source On-State Resistance" rDS(0n) Q
Vss--4.5V, ID: 1.7A 0.155 0.22
Forward Transconductancea gfs VDs = 4.5 V, ID = 2.0 A 4.6 S
Diode Forward Voltage" VSD ls = 1 A, VGS = 0 V 0.77 1.2 V
Dynamic
Total Gate Charge Q9 4.8 10
Gate-Source Charge Qgs VDs = 30 V, VGS = 10 V, ID = 2.0 A 0.8 nC
Gate-Drain Charge di 1.0
Input Capacitance Ciss 240
Output Capacitance Coss Vos = 25 V, VGS = O V, f= 1 MHz 50 pF
Reverse Transfer Capacitance Crss 15
Switching
Turn-On Delay Time tam) 7 15
Rise Time tr VDD = 30 V RL = 30 Q 10 20
L' - ns
Turn-Off Delay Time ttmatt) ID _ 1 A, VGEN - 4.5 V, RG - 6 Q 17 35
Fall Time tt 6 15
a. Pulse test; pulse width S 300 us, duty cycle s 2%.
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Document Number: 70797
S-58492-Rev. A, 15-June-98
Si2308DS
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
f) VGS=10thru5V
A 9 I A 9 y'
ii, I 4 v tl:, (f
I' e te
o'.z-,s / t'z-,o
E 6 E 6 I
_ 3 - 3
3 V TC = 125°C
I 25 C -551
1, 2 V
0 2 4 6 8 10 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
1.0 400
A 0.8 (
g A 300
o 9-, c.
cc I55
7g 0.6 c K
a; 8 200
('3 0.4 I'
"ic," o
.8 0 2 VGS = 4.5 V _.-'"' 100 s. Cass
_...---"'
VGS = 10 V
o l o I
0 3 6 9 12 0 6 12 18 24 30
ID - Drain Current (A) Vos - Drain-to-Source Voltage(V)
Gate Charge On-Resistance vs. Junction Temperature
10 2.0 l I
V = 30 V V = 10 V /
9 E 1.8 - G_s
G" ts-lro--2.0A d Ci" ID=2.0A pr
g V 6 /
= © 1.
g g A "
8 6 Ei l? /
5 g g 1.4 "
J) 5 E /
f,-',. 4 I I V 1.2 I
© ' E"
I a 1.0
> 0 8 /
w,,,.,,-"''''"
0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Document Number: 70797 www.vishay.com . FaxBack 408-970-5600
S-58492-Rev. A, 15-June-98 2-3
Si2308DS
. . . . VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
10 0.6
Cd 'iii'
"i-i" 8 0.4
2 fsi.
y T = 150''C .9
o J 8 0 3
8 a; .
J? I 0 2 ID = 2.0 A
m o5 "N
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
V50 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 l I 12
0.2 "s, ID = 250 0A \
j,i.8 -0 o I
.t15 "ss.
g "ss,, a. \
U) \ l
© -0 4 l
> 's, 3 'N.
"N. Ns,
-0 6 , “n...
-0.8 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100
TJ - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 102 10-1 1 10 100 500
Square Wave Pulse Duration (sec)
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Document Number: 70797
S-58492-Rev. A, 15-June-98
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