SI2307DS ,P-Channel 30-V (D-S) MOSFET FaxBack 408-970-5600S-60570—Rev. A, 16-Nov-982-1Si2307DSVishay Siliconix
SI2307DS
P-Channel 30-V (D-S) MOSFET
VISHAY
Si2307DS
P-Channel 30-V (D-S) MOSFET
Vishay Siliconix
PRODUCT SUMMARY (5)
VDs (V) roman) (Q) ID (A) st1lf,
0.080 @ VGS = -1 0 v -3 “G Cts't
-30 e “o
0.140@VGs=-45 v -2 'tlt, et
TO-236
(SOT-23)
_|_ E D
2 -p?,-r
Top View
Si2307DS (A7)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLSS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos -30 V
Gate-Source Voltage VGS i 20
TA-- 25°C -3
Continuous Drain Current (To = 150°C)3' b ID
TA-- 70°C -2.5
Pulsed Drain Current IBM -12
Continuous Source Current (Diode Conduction)' b ls -1.25
TA-- 25°C 1.25
Power Dissipation' b PD W
TA-- 70°C 0.8
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 ''C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 100
Maximum Junction-to-Ambienta thJA ''CAN
Steady State 130
a. Surface mounted on FR4 board.
b. t s 5 sec.
DocumentNumber: 70843
S-60570-Rev, A, 16-Nov-98
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Si2307DS
Vishay Siliconix
VISHAY
SPECIFICATIONS fra = 25°C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)Dss VGS = 0 V, ID = -10 MA -30
Gate-Threshold Voltage VGS(th) VDs = VGS, ID = -250 yA -1.0
Gate-Body Leakage less Vos = 0 V, VGS = 120 V l 100 nA
VDS = -24 V, VGS = 0 V -1
Zero Gate Voltage Drain Current loss “A
T J = 55°C -10
On-State Drain Currenta loam) Vos s -5 V, VGS = -1 0 V -6 A
VGS = -l 0 V, ID = -3 A 0.064 0.080
Drain-Source On-Resistancea rDs(on) Q
VGs---A.5 V, ID=-2.5A 0.103 0.140
Forward Transconductancea gfS VDS = -10V, ID = -3 A 4.5 S
Diode Forward Voltage VSD ls = -1.25 A, VGS = 0 V -1.2 V
Dynamicb
Total Gate Charge Q9 10 15
Gate-Source Charge Qgs Vros = -15 v, VGS = -10 V 1.9 nC
ID 2 -3 A
Gate-Drain Charge di 2
Input Capacitance Ciss 565
Output Capacitance Coss Vros = -15 V, VGS = 0, f= 1 MHz 126 pF
Reverse Transfer Capacitance Crss 75
Switchingb
td(on) 10 20
Turn-On Time
t, Vyo---15 V,RL=15S2 9 20
ID a -1.0A, VGEN---10V ns
td(off) RG = 6 Q 27 50
Turn-Off Time
tr 7 16
a. Pulse test: PW S300 us duty cycle s2%.
b. For DESIGN AID ONLY, not subject to production testing.
C. Switching time is essentially independent of operating temperature.
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Si2307DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
12 I I
/ VG3=10thru5V
A l/ 4 V
O 2 4 6 8 10
V03 - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
E v = 4.5 v
(2), GS w,,..,,---'''''"
VGS = 10 V
0 2 4 6 8 10
ID - Drain Current (A)
Gate Charge
10 I I
VDS = 15 V
ID = 3 A
Ci?. 8 r
0 2 4 6 8 10
Q9 - Total Gate Charge (nC)
rDS(on) — On-Resistance
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
'Tc = -ssu':
IO 25°C
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Capacitance
0 6 12 18 24 30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
Vss=10V
1.2 o,,,,w''
',,,,,p'''''"
1.0 w,,,,,,,,,,,,,,-'''''''''''''
0.8 o,,,,,,-'''''
-50 0 50 100 150
To - Junction Temperature CC)
DocumentNumber: 70843
S-60570-Rev, A, 16-Nov-98
www.vishay.com . FaxBack 408-970-5600
Si2307DS
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
iii.:.".
CT T J = 150°C
93’ 1.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
0.4 ,,,,,,,,w/"
(ii:] o,,,,,,,'''''
li ID = 250 11A ',,,,,,,pp''''''
"ii'." 0.0
-0.2 //
-50 -25 0 25 50 75 100 125 150
TJ - Temperature (°C)
Duty Cycle = 0.5
tte E 0.10
Single Pulse
ltr" 10’3 10-2
rDS(on) — On-Resistance ( Q )
Power (W)
On-Resistance vs. Gate-to-Source Voltage
ID = -3 A
'_...-,
0 2 4 6 8 10
V68 - Gate-to-Source Voltage (V)
Single Pulse Power
TA = 25°C
4 Single Pulse
"ss,,,,.
0.01 0.1 1 10 100 500
Time (sec)
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
_.L: _
1. Duty Cycle, D = T
2. Per Unit Base = RthUA = 130°CNV
3. TJM - TA = PDMzthJAm
4. Surface Mounted
10 100 500
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Document Number: 70843
S-6057(r-Rev, A, 16-Nov-98
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