SI2306DS ,N-Channel 30-V (D-S) MOSFET FaxBack 408-970-5600S-56945—Rev. B, 23-Nov-982-1Si2306DSVishay Siliconix
SI2306DS
N-Channel 30-V (D-S) MOSFET
VISHAY
Si2306DS
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
Vros (V) rDS(on) (C2) ID (A)
30 0.057@VGS=10V $3.5
0.094@VGs=4.5V i213
TO-236
(SOT-23)
Top View
Si2306DS (A6)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vros 30
Gate-Source Voltage VGs i20
TA = 25°C d: 3.5
Continuous Drain Current (To = 150°C)a- b ID
TA = 70°C $28 A
Pulsed Drain Current IDM : 16
Continuous Source Current (Diode Conduction)", b ls 1.25
TA = 25°C 1.25
Maximum Power Dissipation' b PD W
TA = 70°C 0.80
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 100
Maximum Junction-to-Ambienta thJA ''CNV
Steady State 130
a. Surface Mounted on FR4 Board,
b. t s 5 sec.
Document Number: 70827
S-56945-Rev. B, 23-Nov-98
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Si2306DS
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS Vos = 0 V, ID = 250 p.A 30 V
Gate Threshold Voltage N/SS(th) Vos = VGS, b = 250 WA 1
Gate-Body Leakage IGSS Vos = 0 V, VGS = cl: 20 V l 100 nA
VDS = 24 V, VGS = 0 V 0.5
Zero Gate Voltage Drain Current IDSS uA
VD3=24V,VGS=0V,TJ=55°C 10
VD 24.5V,V =10V 6
On-State Drain Currenta 'D(on) S GS A
VDS 2_' 4.5 V,VGs=4.5V 4
VGS =10 V, ID = 3.5 A 0.046 0.057
Drain-Source On-State Resistance" rDS(0n) Q
VGS = 4.5 V, ID = 2.8 A 0.070 0.094
Forward Transconductancea gfs VDs = 4.5 V, ID = 3.5 A 6.9 S
Diode Forward Voltage" VSD ls = 1.25 A, VGS = 0 V 0.8 1.2 V
Dynamicb
Gate Charge Qg VDS = 15 V, VGS = 5 V, ID = 3.5 A 4.2 7
Total Gate Charge 09. 8.5 20 C
Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 3.5 A 1.9
Gate-Drain Charge ' 1.35
Input Capacitance Ciss 555
Output Capacitance Coss VDs = 15 V, VGS = 0 V, f= 1 MHz 120 pF
Reverse Transfer Capacitance Crss 60
Switching
Turn-On Delay Time td(on) 9 20
Rise Time tr VDD=15V RL=15§2 7.5 18
_ L - ns
Turn-Off Delay Time td(ott) ID = 1 A, VGEN - 10 V, RG - 6 Q 17 35
Fall Time tf 5.2 12
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 3 300 ps, duty cycle S 2%.
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Document Number: 70827
S-56945-Rev. B, 23-Nov-98
Si2306DS
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
V = 10 thru 5 V
<3 "ii:]
3 4 V 3 8
o a Tc = 125°C //
25°C /(/
3 thru 1 v I "ss, -55''C
0 2 4 6 8 10 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.5 800
E E 600
'lo,' 5;
.1rd 0.3 8 500
a; 8 400
I 0.2 I 300
"ic," o
8 0 1 VGS = 4.5 V j 200
L . _-...-''" -
VGS - 10 V 100
0 4 8 12 16 0 6 12 18 24 30
ID - Drain Current (A) Vos - Drain-to-Source Voltage(V)
Gate Charge On-Resistance vs. Junction Temperature
10 1.6
S VD_S=15V / VG_S=1ov w'''''
G" ts-lro--3.5A Ci" 1.4-ID=3.5A 1
g " w w'''"
g / te,,-,
m a l?
g 6 .5 N 1.2
8 ID i
U? 5 E
s?. / O fl
£153 4 l V 1.0
I a ,,,-''"
8 2 f 0 8 /
0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Document Number: 70827 www.visharcom . FaxBack 408-970-5600
S-56945-Rev. B, 23-Nov-98 2-3
Si2306DS
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
10 0.5
S.. G"
E E 0.3
L a tn
8 TJ = 150 C $
'sl] F,
g O 0.2
a) sl:5, ' ID - 3.5 A
:8 0.1
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) I/cs - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 l l 12
02 "ssc,,,,,,,, ID=250 0A 10
5i:". -0.0 8
E -0 2 "ss, g 6
"iz'." "ss,. E
iri TA = 25°C
f -0.4 , 4
-0.6 2 t "
.Il- a...
-0.8 0
TJ - Temperature CC) Time (sec)
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
IO-l 1
Square Wave Pulse Duration (sec)
Notes:
-ly-1 _
1. Duty Cycle, D =
2. Per Unit Base = RthoA =130°CNV
3. TJM - TA = PDMZIhJAm
4. Surface Mounted
10 100 500
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Document Number: 70827
S-56945-Rev. B, 23-Nov-98
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