SI2306BDS-T1-E3 , N-Channel 30-V (D-S) MOSFET
SI2306BDS-T1-E3 , N-Channel 30-V (D-S) MOSFET
SI2306DS ,N-Channel 30-V (D-S) MOSFET FaxBack 408-970-5600S-56945—Rev. B, 23-Nov-982-1Si2306DSVishay Siliconix
SI2305DS
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
VISHAY
Si2305DS
Vishay Siliconix
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (O) ID (A)
0.052 ©VGs---A.5V $3.5
-8 0.071@VGs=-2diV i3
(h108@VGs---C8V 12
TO-236
(SOT-23)
Je-s,,
Top 1Aew
Si2305DS (A5)*
*Marking Code
set Bt
wit:?,
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS -8
Gate-Source Voltage VGS i 8
TA = 25°C l 3.5
Continuous Drain Current (T J = 150°C) ID
TA = 70°C d: 2.8 A
Pulsed Drain Current IBM d: 12
Continuous Source Current (Diode Conduction)' b Is -1l5
TA = 25°C 1.25
Maximum Power Dissipation)' b PD W
TA = 70°C 0.8
Operating Junction and Storage Temperature Range Tu, Tstg -55 to 150 "C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 100
Maximum Junction-to-Ambienta RthJA ''CA/V
Steady State 130
a. Surface Mounted on FR4 Board,
b. t s 5 sec.
Document Number: 70833
S-56947-Rev. C, 28-Dec-98
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Si2305DS
Vishay Siliconix
VISHAY
SPECIFICATIONS IT,, = 25°C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)D33 VGS = 0 V, ID = -l 0 “A -8
Gate-Threshold Voltage VGS(th) Vos = VGS, ID = -250 Is/k Ah45
Gate-Body Leakage less l/os = 0 V, Was = d: 8 V d: 100 nA
Vos = Ai.4 V, VGS = o v -1
Zero Gate Voltage Drain Current IDSS pA
N/Ds-_/Vi-ol/fs-ic -10
N/rss sa-g MVGs=-4SN/ -6
On-State Drain Currenta low") A
Vros S -5 V, VGS = -2.5 V -3
VGS = -A.5 V, ID = -3.5 A 0.044 0.052
Drain-Source On-Resistancea rDS(on) VGS = Al.5 V, Ir, = -3 A 0.060 0.071 C2
Was = -1.8 V, ID = -2 A 0.087 0.108
Forward Transconductancea gfs VDs = -5 V, ID = -3.5 A 8.5 S
Diode Forward Voltage Vsn ls = -1.6 A, VGS = 0 V -1.2 V
Dynamicb
Total Gate Charge Q9 10 15
Gate-Source Charge Qgs VDS = -4 V, VGS = -45 V 2 n0
ID a -3.5 A
Gate-Drain Charge di 2
Input Capacitance Ciss 1245
Output Capacitance Coss VDS = -4 V, VGS = 0, f= 1 MHz 375 pF
Reverse Transfer Capacitance Crss 210
Switchingb
. td(on) 13 20
Turn-On Time
tr Vcxo---4 V,RL=4Q 25 40
ID _ -1.0 A, VGEN = -4.5 V ns
tum) RG = 6 g 55 80
Turn-Of Time
tf 19 35
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW S300 us duty cycle 52%,
C. Switching time is essentially independent of operating temperature.
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2-2 S-56947-Rev. C, 28-Dec-98
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Si2305DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
JY VGS = 4.5 thru 2.5 V
l l l l
e'"'''''"
a" 8 /
Cl ISV,
1,0.5V
0 r-I-l-
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
A 0.25
c 0.20
0F 0.15
E" 0.10
0 2 4 6 8 10 12
ID - Drain Current (A)
Gate Charge
A Vos = 4 V
m 4 _ ID - 3.5 A
UR w''''"
g, 2 /
0 2 4 6 8 10
% - Total Gate Charge (nC)
r[)smn) — On-Resistance (Q)
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
12 I I
Tc=-55l I /
25''C //J l
, 125°C
0 0.5 1.0 1.5 2.0 2.5
Was - Gate-to-Source Voltage(V)
Capacitance
NSS,,.,... Ciss
m--...-,
400 (st.:.:::.--
m---..-,
0 2 4 6 8
VDS - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
1.4 I I
VGS = 4.5 V
ID = 3.5 A
1.2 //
0.8 o,,-''''
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Document Number: 70833
S-56947-Rev. C, 28-Dec-98
www.vishay.com . FaxBack 408-970-5600
Si2305DS
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30 0.5
10 A 0.4
115, 8
5 f3 0.3
o T J = 150°C 8
's'] 5
g 1 o 0.2
(I) og ( ID = 3.5 A
- J] 0.1 N
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 I I 12
0.3 ID = 250 M // 10
(i? 0.2 ww 8
.g I V
n: 0 1 t, 6
g" ',,,,i'''" E l
il" 0 0 4
TA = 25°C
-0.1 2
“Ilu ~
-50 -25 O 25 50 75 100 125 150 0.01 0.1 1 10 100 500
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
1 tt-4 1 0-3 1 0-2 IO-l 1
Square Wave Pulse Duration (sec)
Notes:
1. Duty Cycle, D = T2
2. Per Unit Base = RmJA =130°CIW
3, Tou - TA = ProuzthsA(t)
4. Surface Mounted
1 0 100 500
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Document Number: 70833
S-56947-Rev. C, 28-Dec-98
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