SI2303DS ,P-Channel 30-V (D-S) Rated MOSFETSi2303DSVishay SiliconixP-Channel 30-V (D-S) MOSFET
SI2303DS
P-Channel 30-V (D-S) Rated MOSFET
VISHAY
Si2303DS
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
30 0.240 @ VGS = -10 v -1.7
_ 0.460@VGS=-A.5N/ -1.3
T0-236
(SOT-23)
Top View
Si2303DS (A3)*
*Marking Code
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS -30
Gate-Source Voltage Ves $20
Continuous Drain Current (TJ = 150°C) TA = 250C I -1.7
(surface mounted on FR4 board, t s 5 sec) TA = 70°C D -1.4
Pulsed Drain Currenta IDM -10 A
Continuous Source Current (MOSFET Diode Conduction) I -1 25
(surface mounted on FR4 board, t s 5 sec) s .
TA = 25°C 1.25
Maximum Power Dissipationa PD W
TA = 70°C (18
Operating Junction and Storage Temperature Range Ts Tstg -55 to 150 "C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Unit
Maximum Junction-to-Ambient (surface mounted on FR4 board, t s 5 sec) 100
thJA ''CM/
Maximum Junction-to-Ambient (surface mounted on FR4 board) 166
a. Pulse width limited by maximum junction temperature.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70770
S-49557-Rev. B, 27-Apr-98
www.vishay.com . FaxBack 408-970-5600
Si2303DS
. . . . VISHAY
Vishay Siliconix
MOSFET SPECIFICATIONS IT,, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -10 “A -30 V
Gate Threshold Voltage VGS(th) VDs = VGS, b = -250 “A -1.0
Gate-Body Leakage less VDS = 0 V, VGS = i 20 V cl: 100 nA
VDS = -30 V, VGS = o v -1
Zero Gate Voltage Drain Current loss WA
VDs=-30V,Vss=0V,Tu=551 -10
On-State Drain Currenta IBM) VDS 2 -5 V, VGS = -10 V A, A
1/Gs=-10V, b---1.7A 0.190 0.240
Drain-Source On-State Resistancea rDsmm Q
VGS = -A.5 V, lo = -1.3 A 0.240 0.460
Forward Transconductancea gts VDs = -10 V, b = -1.7 A 2.4 S
Diode Forward Voltage VSD ls = -1.25 A, VGS = O V -0.8 -1.2
Dynamic"
Total Gate Charge Q9 5.8 10
Gate-Source Charge Qgs VDS = -1 5 V, VGS = -10 V, ID = -1.7 A 0.8 no
Gate-Drain Charge di 1.5
Input Capacitance Ciss 226
Output Capacitance Coss VDS = -1 5 V, VGS = 0 V, f= 1 MHz 87 pF
Reverse Transfer Capacitance Crss 19
Switching'
Turn-On Delay Time Mon) 9 20
Rise Time tr VDD = -15 V, RL = 15 Q 9 20 ns
Turn-Off Delay Tlme td(oti) ID _ -1 A, VGEN = -10 V, Rs = 6 Q 18 35
Fall Time tf 6 20
a. Pulse test: PW S300 us duty cycle 52%.
b. For DESIGN AID ONLY, not subject to production testing.
C. Switching time is essentially independent of operating temperature.
www.vishay.com . FaxBack 408-970-5600 Document Number: 70770
2-2 S-49557-Rev. B, 27-Apr-98
Si2303DS
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
10 10 l /"
VGS=1Othru6V Tc---55l y
8 f 8 l /
A / 5 V A 25°C /
E 6 y -"'''""" E 6 I 125°C -
8 /// 5
t5 4 4 v 5 4
0 2 4 6 8 10 O 1 2 3 4 5 6 7
VDS - Drain-to-Source Voltage (V) l/ss - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.8 500
8 0.6 I [ts
g VGS = 4.5 V 8
ii' g 300 -
0|: 0 4 T', Ciss
C . D.
I o.,..-'''' (I) 200
’5 VGS = 10 V _-...-- O Ns,, Coss
if O2 "s,
0 2 4 6 8 10 O 6 12 18 24 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 I I 1.8 I
VDS=15V VGS=10V
S |D=1.7A lo=1.7A
g 8 / 9: 1.6
53 / tD
a) - T7 1.4
o .9 u)
it 6 / 8 (-i,'
o? /" , g 1.2
g o o .
.3 4 / I E "
(D I E" o,,,,,-'''''
I 3 1.0
g J] w,.,''''"
0.8 s,,,,,,,,,-"'"
0 1 2 3 4 5 6 -50 0 50 100 150
O9 - Total Gate Charge (nC) To - Junction Temperature (°C)
Document Number: 70770 www.vishay.com . FaxBack 408-970-5600
S-49557-Rev. B, 27-Apr-98 2-3
Si2303DS
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) MOSFET
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
10 1.0
A a 0.8
6' ii' 0.6
a) n: -
'ii 6 t ID - 1.7 A
(D I 0.4
w CE K
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.5 10
ID = 250 WA o,,,,?
0.0 "w'''' N.
w,,,,,-''''" 2
Power (W)
Single Puls
VGS(th) Variance (V)
-50 0 50 100 150 0.01 0.10 1.00 1000
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
E Duty Cycle =
te'. a
.0 g 0.1
Single Pulse
10-4 10-3 10-2 IO-l 1 IO 30
Square Wave Pulse Duration (sec)
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b4 S-49557-Rev. B, 27-Apr-98
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