SI2302ADS-T1 ,N-Channel 1.25-W/ 2.5-V MOSFETS-41772—Rev. D, 20-Sep-041Si2302ADSVishay SiliconixSPECIFICATIONS(T =25_CUNLESSOTHERWISENOTED)APara ..
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SI2302ADS-T1
N-Channel 1.25-W/ 2.5-V MOSFET
VISHAY
Si2302ADS
N-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.060 @ Vss = 4.5 v 2.4
20 0.115@VGS=2.5 v 2.0
TO-236
(SOT-23)
s 2 -E[rr
Top Mew
Si2302DS (2A)*
*Marking Code
Vishay Siliconix
Ordering Information: Si2302ADS-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 sec Steady State Unit
Drain-Source Voltage Vos 20 V
Gate-Source Voltage VGS d: 8
TA-- 25°C 2.4 2.1
Continuous Drain Current (T J = 150°C)a ID
TA-- 70°C 1.9 1.7
Pulsed Drain Currenta IBM 10
Continuous Source Current (Diode Conduction)" ls 0.94 0.6
TA-- 25°C 0.9 0.7
Power Dissipation" PD W
TA-- 70°C 0.57 0.46
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t g 5 sec. 115 140
Maximum Junction-to-Ambienta RmJA ''C/1/V
Steady State 140 175
a. Surface Mounted on FR4 Board.
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Document Number: 71831
S-41772-Rev. D, 20-Sep-04
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Si2302ADS “3%
Vishay Siliconix
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)Dss VGS = 0 V, ID = 10 “A 20
Gate-Threshold Voltage Vegan) Vos = VGS, ID = 50 y/N 0.65 0.95 1.2
Gate-Body Leakage less VDS = 0 V, VGS = i8 V d: 100 nA
VDs=20V,VGs=0V 1
Zero Gate Voltage Drain Current Koss pA
VDS=20V.VGS=OV,TJ=55°C 10
Vrose5VVss=4.5V 6
On-State Drain Currenta lmon) A
N/ros:e5V,Vss=2SV 4
VGS = 4.5 v.1D = 3.6 A 0.045 0.060b
Drain-Source On-Resistancea rDs(on) Q
VGS = 2.5 V, ID = 3.1 A 0.070 0.115
Forward Transconductancea gfs Vos = 5 V, ID = 3.6 A 8 S
Diode Forward Voltage VSD ls = 0.94 A, VGS = 0 V 0.76 1.2
Dynamic
Total Gate Charge 09 4.0 10
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 3.6 A 0.65 nC
Gate-Drain Charge di 1.5
Input Capacitance Ciss 300
Output Capacitance Coss VDS = 10 V, VGS = 0 V, f= 1 MHz 120 pF
Reverse Transfer Capacitance Crss 80
Switching
Turn-On Delay Time td(0n) 7 15
Rise Time tr VDD = 10 V, RL = 2.8 Q 55 80 ns
Turn-Off Delay Time td(ott) ID E 3.6 A, VGEN = 4.5 V, R9 = 6 Q 16 60
Fall-Time tr 10 25
a. Pulse test: PW 3300 Ms duty cycle s2%.
b. Effective for production 10/04.
www.vishaycom Document Number: 71831
2 S-41772-Rev. D, 20-Sep-04
VISHAY
Si2302ADS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
VGS = 5 thru 2.5 v
'r, I 2 v
2 0,0.5,1V 1.5V-
1 2 3 4 5
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
A 0.12
I o,,,///
m 0.09
M V = 2.5 V
ia','' GS ----'''"
8 0.06 -
J-, VGS = 4.5 V
9 0.03
0 2 4 6 8 10
ID - Drain Current (A)
5 Gate Charge
Vos = 10 v /
ID = 3.6 A /
0 1 2 3 4 5
Output Characteristics
Qg - TotaIGate Charge(nC)
I D — Drain Current (A)
C — Capacitance (pF)
rDS(on) - On-Resiistance
(Normalized)
Transfer Characteristics
T = 125°C ,
25''C 2/
-55''C
0.0 0.5 1.0 1.5 2.0 2.5
vss - Gate-to-Source Voltage (V)
Capacitance
l 'htss., Cess
300 N.
's, Coss
"'sci'i'.iu.._,
0 4 8 12 16 20
Vros - Drain-to-Source Voltage(V)
1 8 On-Resistance vs. Junction Temperature
VGS = 4.5 V
ID = 3.6 A
1.4 ww''''''"
o,,,,,,,,,-''''''"
1.2 w,,,'''"
1.0 r,,,,--'''"''
0.8 //
-50 O 50 100 150
TJ - Junction Temperature CC)
Document Number: 71831
S-41772-Rev. D, 20-Sep-04
www.vishay.com
Si2302ADS
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
R" T J = 150°C V
:7 1 8
o ‘05)
ct,i:,'r 8
0.1 J-.,
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
0.1 "N
F "s. =
F -0.0 b 250 11A _
§ 's, g
15 -0.1 \ t,
E" "ss, f?
tC', -0.2
-0.3 "S,
-0.4 ,
-50 0 50 100 150
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
( ko=3.6A
"SSS.,,,..,,,,,,,,
2 4 6 8
VGS - Gate-to-Source Voltage (V)
Single Pulse Power
\ Tc = 25°C
Single Pulse
0.10 1.00 10.00 100.00 1000.00
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 1o-3 10-2 10-1 1
Square Wave Pulse Duration (sec)
10 100 600
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Document Number: 71831
S-41772-Rev. D, 20-Sep-04
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