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SI2301ADS
P-Channel 2.5-V (G-S) MOSFET
“3% Si2301ADS
New Product Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (AP
0.130 @ VGS = -4.5 v -2.0
-20 0.190 @ VGS = -2.5 v -1f5
TO-236
(SOT-23)
s 2 9.3%
Top Mew
Si2301DS (1A)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 sec Steady State Unit
Drain-Source Voltage VDS -20 V
Gate-Source Voltage Vss i8
TA-- 25°C -2.0 -1.75
Continuous Drain Current (To = 150°C)b ID
TA-- 70°C -1.6 -1.4
Pulsed Drain Currenta loss -10
Continuous Source Current (Diode Conduction)' Is -0.75 Ah6
TA-- 25°C 0.9 0.7
Power Dissipationb Po W
TA-- 70°C 0.57 0.45
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb 115 140
' V V RthJA ''CIW
Maximum Junction-to-Ambientc 140 175
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t s 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http:/Mww.vishay.com/www/product/spice.htm
Document Number: 71835 www.vishay.com
S-20617-Rev. B, 29-Apr-02 1
Si2301ADS “3%
Vishay SiliConix New Product
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 IIA -20
Gate-Threshold Voltage VGS(th) Vros = Was, ID = -250 “A Ah45 -0.95
Gate-Body Leakage less VDS = 0 V, VGS = i 8 V i 100 nA
VDs=-16V,VGs=01/ -1
Zero Gate Voltage Drain Current IDSS 11A
VDs=-16VVGs=0V,TJ=55c'C -10
Vos S -5 V, VGS = -A.5V -6
On-State Drain Currenta 'D(on) A
Vos S -5 V, VGS = -2.5 V -3
Was = -4.5 V, ID = -2.8 A 0.093 0.130
Drain-Source On-Resistancea rDS(on) Q
VGs=-2-5 V, ID=-2.0A 0.140 0.190
Forward Transconductancea gfs VDs = -5 V, ID = -2.8 A 6.5 S
Diode Forward Voltage VSD ls = -0.75 A, VGs = 0 V -0.80 -1.2
Dynamicb
Total Gate Charge A; 4.2 10
- VDS=-6V,VGs=-4.5V
Gate Source Charge Qgs ID E -2.8A 0.8 no
Gate-Drain Charge di 0.8
Input Capacitance Ciss 500
Output Capacitance Coss VDs = A, V, VGs = 0, f= 1 MHz 115 pF
Reverse Transfer Capacitance Crss 62
Switching''
[mm 6 25
Turn-On Time
tr VDD---6V,RL--6Q 3O 60
ID a -1.0A, VGEN =-4.51/ ns
td(ott) Rs = 6 Q 25 70
Turn-Off Time
tf 10 60
a. Pulse test: PW s300 us duty cycle s2%.
b. For DESIGN AID ONLY, not subject to production testing.
C. Switching time is essentially independent of operating temperature. . FaxBack 408-970-5600
www.vishay.com Document Number: 71835
2 S-20617-Rev. B, 29-Apr-02
"ii=iir
VISHAY
Si2301ADS
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
10 l / I I
VGS = 5,4.5,4, 3.5,3 V
l / 2.5 V
'ii.:]
(f, 4 2 v
CI 'ly'''
I y" 1 V 1.5 v
1 2 3 4 5
v.33 - Drain-to-Source Voltage (V)
On-Resistancevs. Drain Current
00:) 0.3
lg 0.2 VGS = 2.5 V I
ih" VGS = 4.5 V
'- 0.1
0 2 4 6 8 10
ID - Drain Current (A)
5 Gate Charge
Vros = 10 V
ID = 3.6 A
O 3 //""'
P. 2 I
0 1 2 3 4 5
Output Characteristics
Qg - Total Gate Charge (nC)
rDS(on)— On-Resistance (Q )
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
TC = -55°C y
25°C ///
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Capacitance
'ss.. Cass
'mmm.....-,
0 4 8 12 16 20
Vros - Drain-to-Source Voltage (V)
1 6 On-Resistance vs. Junction Temperature
. I I l
VGS = 4.5 V
ID = 3.6 A
1.4 s,,,,,,,,,,,,,-'''''''''
1.2 w,,,,,,,,,,,,,,,""''''''''
0.8 l/
,,e'''"
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Document Number: 71835
S-20617-Rev. B, 29-Apr-02
www.vishay.com
. I=7'"
Si2301ADS VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
10 0.6
tt To = 150°C v
- tl? 0.4
it .1rLs'
0.1 m I = 3.6 A
g 00F: 0.3 D
I L 0.2
i” 0.01 ill"
0.001 0.0
o 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 10
0.3 w" 8 (
g ID = 250 “A w,,,,,,-'''''' g
= OA 1 =
5: ',pe'''" J, 4
o 0.0 N
-0.1 2 \
-0.2 0
-50 -25 0 25 50 75 100 125 150 0.01 0.10 1.00 10.00 100.00 1000.00
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
g Ch I
8 g pm,
U.l E l
a) a) " _
(il e -ly-1 tit tl
g 1. Duty Cycle, D = T
2 2. Per Unit Base = RthJA = 625'C/W
. 3. TJM - TA = PDMZthJAm
Single Pulse 4. Surface Mounted
IO-A Ity-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71835
4 S-20617-Rev. B, 29-Apr-02
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