SI1917EDH ,P-Channel 20-V (D-S) MOSFETS-03174—Rev. A, 07-Mar-01 1YYSi1917EDHNew ProductVishay Siliconix ..
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SI1917EDH
P-Channel 20-V (D-S) MOSFET
VISHAY
Si1917EDH
New Product
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) mstom (Q) ID (A)
0.370 @ VGS = -4.5 v -1.15
-12 0.575 @ VGS = -2.5 v Ah92
0.800 @ Mas = -1.8 v -C78
SOT-363
SC-70 (6-LEADS)
S, I: 6 D1 Marking Code G
G1 IE 5 G2
D2 E Tr 4 82
Lot Traceability
and Date Code
Part # Code
FEATURES
. TrenchFET© Power MOSFETS: 1.8-V Rated
. ESD Protected: 3000V
. Thermally Enhanced SC-70 Package
APPLICATIONS
. Load Switching
. PA Switch
. Level Switch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS -12
Gate-Source Voltage VGS i 12
TA=25°C -1.15 -1.00
Continuous Drain Current (TJ = 150°C)a ID
TA = 85°C -0.83 -0.73 A
Pulsed Drain Current IBM -3
Continuous Diode Current (Diode Conduction)" ls Ah61 -0.47
TA = 25°C 0.73 0.57
Maximum Power Dissipation" PD W
TA = 85°C 0.38 0.30
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 130 170
Maximum Junction-to-Ambienta R
Steady State WA 170 220 "'CA/V
Maximum Junction-to-Foot (Drain) Steady State Rm}: 80 100
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71414 www.vishay.com
S-03174-Rev. A, 07-Mar-01
Si1917EDH
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS IT., = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) Vos = VGS, ID = -100 11A -0.45 V
VDS=0VYVGS= i4.5V i1.5 WA
Gate-Body Leakage less
N/Ds=0VVGs=ce12V 21:10 mA
VDS = -9.6 V, VGS = 0 V -1
Zero Gate Voltage Drain Current loss WA
VDs=-9.6 V,VGS=0V, TJ= 85°C -5
On-State Drain Current3 |D(0n) VDS = -5 V, I/ss = -4.5 V -2 A
VGS =-4.5V, ID =-1.0A 0.300 0.370
Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V ID = -0.81 A 0.470 0.575 Q
VGS = -1.8 V, ID = -C2 A 0.660 0.800
Forward Transconductancea 9ts VDS = -10 V, ID = -1.0 A 1.7 S
Diode Forward Voltage3 Vsro ls = -0.47 A, VGs = 0 V -0.85 -1.2
Dynamicb
Total Gate Charge Q9 1.3 2.0
Gate-Source Charge Qgs VDS = -6 V, VGS = -45 V, ID = -ro A 0.31 nC
Gate-Drain Charge di 0.31
Turn-On Delay Time [mm 0.17 0.26
Rise Time tr VDD = -6 V, RL = 12 g 0.47 0.71 us
Turn-Off Delay Time M(om In E -0-5 A, VGEN = -4-5 V, Rs = 6 Q 0.96 1.4
Fall Tlme tf 1.0 1.5
a. Pulsetest; pulse width 5 300 113. duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
10 10,000
g Its. 100
E 6 g 10 T = 150°C
'i' 4 , 1
_8 8 0.1
r,.,,.,.,,,,,,,,,,----"'''" 0.01
0 -. 0.001
0 4 8 12 16 o 3 6 9 12 15
VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71414
S-03174-Rev, A, 07-Mar-01
\HSHAY
Si1917EDH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
VGS = 5thrU 3V
g.] Ct
0 1 2 3 4
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
A VGS = 1.8 V
v 0.9 C'
il,'' / VGS = 2.5 v / Ji'.
rl: 0.6 - g
"ii," Vss 4.5 v O
:3 0.3
0.0 0.5 1.0 1.5 2.0 2.5 3.0
b - Drain Current(A)
Gate Charge
A VDS = 6 V
ty = -
m 4 _- ID 1.0 A j a
E /" w
j,' g A
8 3 "a' E
J " irti
g / 8 a
S? 2 I I V
(D / E"
8 1 l f
0.0 0.2 0.4 0.6 0.8 CO 1.2 1.4
Qg - Total Gate Charge (nC)
Transfer Characteristics
3.0 I _ _ / /
TC = -55oC
2.5 25°93 / /
2.0 /yjf(
/// 125°C
1.5 ('
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Vss - Gate-to-Source Voltage (V)
Capacitance
Ns Ciss
'ss...
80 Is,,,,,
Crss "'''"---.,...._,
"s..,..,
0 2 4 6 8 10 12
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 l l
VGS = 4.5 V
1.47 ID---1.0 A ""
1.2 w,.,.,-"''''''"
0.8 ,/
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature CC)
Document Number: 71414
S-03174-Rev. A, 07-Mar-01
www.vishay.com
Si1917EDH
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
T J = 150°C A 1.6
tli iir
g g 1 2
g E . ID = -1.0 A
8 C) 0.8
J] 0.4
0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.3 I l 5
ID = 100 ”A w'''''
0.2 /I 4 l
_s'is g
tiii-' 0.0 m 2 l
> 'hs,,
/ 'us,
Ahl I 1
-0.2 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
it' Duty Cycle = 0.5
.S a 0.2
2' E Notes:
lt E 0.1 -T-
B lr, PW
g fE 0.05 l
N, 0.02
Single Pulse
10-4 10-3 10-2 IO-l 1
Square Wave Pulse Duration (sec)
1. Duty Cycle, D t2
2, Per Unit Base = RthJA = 170°CNV
3. TJM - TA = PDMZthJAm
4. Surface Mounted
100 600
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Document Number: 71414
S-03174-Rev, A, 07-Mar-01
“3% Si1917EDH
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
1o-4 10-3 10-2 IO-I 1 10
Square Wave Pulse Duration (sec)
Document Number: 71414 www.vishay.com
S-03174-Rev. A, 07-Mar-01 5
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