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SI1913EDH
P-Channel 20-V (D-S) MOSFET
VISHAY
Si1913EDH
New Product
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) mstom (Q) ID (A)
0.490 @ VGS = -4.5 v -1.0
-20 0.750 @ VGS = -2.5 v Ah81
1.10@VGs= -1.8 v -C67
SOT-363
SC-70 (6-LEADS)
S, [I 'fi? El D1
(31 E T El G2
D2 E CC, El 82
Top 1Aew
Marking Code
Lot Traceability
and Date Code
Part ' Code
FEATURES
. TrenchFET© Power MOSFETS: 1.8-V Rated
. ESD Protected: 3000V
. Thermally Enhanced SC-70 Package
APPLICATIONS
. Load Switching
. PA Switch
. Level Switch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS -20
Gate-Source Voltage VGS i 12
TA = 25°C -1 .0 -0.88
Continuous Drain Current (TJ = 150°C)a ID
TA = 85°C -0.72 -0.63 A
Pulsed Drain Current IBM -3
Continuous Diode Current (Diode Conduction)" ls Ah61 -0.48
TA = 25°C 0.74 0.57
Maximum Power Dissipation" PD W
TA = 85°C 0.38 0.30
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 130 170
Maximum Junction-to-Ambienta R
Steady State WA 170 220 "'CA/V
Maximum Junction-to-Foot (Drain) Steady State Rm}: 80 100
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71415 www.vishay.com
S-03175-Rev. A, 05-Mar-01
Si1913EDH
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS IT., = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) Vos = VGS, ID = -100 0A -0.45 V
VDS=0VYVGS= 21:4.5V i1.5 WA
Gate-Body Leakage IGSS
N/Ds=0VVGs=ce12V 21:10 mA
Vrs=-16VVss=0V -1
Zero Gate Voltage Drain Current loss WA
N/Ds=-16V,VGs=0V,TJ=85''C -5
On-State Drain Current3 |D(0n) VDS = -5 V, I/ss = -4.5 V -2 A
VGS = -4.5 V, ID = Ah88 A 0.400 0.490
Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V ID = A).71 A 0.610 0.750 Q
VGs=-1.8V, lD---0.2 A 0.850 1.10
Forward Transconductancea 9ts VDS = -10 V, ID = -028 A 1.5 S
Diode Forward Voltage3 Vsro ls = -0.47 A, VGs = 0 V -0.85 -1.2
Dynamicb
Total Gate Charge Q9 1.2 1.8
Gate-Source Charge Qgs Vos = -10 V, VGS = -45 V, ID = Mh88 A 0.3 nC
Gate-Drain Charge di 0.3
Turn-On Delay Time [mm 0.150 0.23
Rise Time tr VDD = -10 V, RL = 20 g 0.480 0.72 us
Turn-Off Delay Time 1mm '0 E -0-5 A, VGEN = -4-5 V, Rs = 6 Q 0.840 1.2
Fall Tlme tf 0.850 1.2
a. Pulsetest; pulse width 5 300 113. duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
8 10,000
I 1,000
g 6 Its. 100
E g 10 T = 150°C
2 4 so,
8 6' 1
_0 2 w,,,,,A f 0.1
o,,,,,,,-''''''' 0.01
0 1 0.001
0 4 8 12 16 o 3 6 9 12 15
VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71415
S-03175-Rev, A, 05-Mar-01
\HSHAY
Si1913EDH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
VGS = 5 thru 3 SV
g.] 2.0
C" 1.0
0 1 2 3 4
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 1.8 V
g o,,,,,,,,,) VGS = 2.5 V
rl: 0.8 "
I w,.--'''''"''
"ii," o-'"'' VGS = 4.5 V
:3 0.4
0.0 0.5 1.0 1.5 2.0 2.5 3.0
b - Drain Current (A)
Gate Charge
5 1 1 "
A VDS = 10 V
ty 4 _- ID = 0.88A /
g 2 ,__/
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Qg - Total Gate Charge (nC)
rosmn) — On-Resistance (g)
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
2.5 Tc---55''C
2.0 25°c\./,///
1.5 /A/
of 125°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Capacitance
Ns Cass
C "''''s--...
o 4 8 12 16 20
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 l l l
VGS = 4.5 v ,,,w'''
1.47 ID=0.88A ',,,,,p'''''"
0.8 'e,,,.,-'''''''''
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature CC)
Document Number: 71415
S-03175-Rev. A, 05-Mar-01
www.vishay.com
Si1913EDH
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
T J = 150°C A
A Cl 1.2
tli iir
g S, ( ID = 0.88 A
o tD o 8
8 c? .
w 5, 0.4 "s-,,,..,......,
0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.30 I l 5
0.25 ID = 100 ”A // 4
0.20 " l
g 0.15 /
a: " 3
_s'is 0.10 1 g N
Ci." 0.05 8 2 N
o -C00
> ''ss,
-C05 1 ""
-C15 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
E Duty Cycle = 0.5
.S a 0.2
2' E Notes:
lt E 0.1 -T-
B lr, PW
g fE 0.05 1
N, 0.02
Single Pulse
10-4 10-3 10-2 10-1 1
Square Wave Pulse Duration (sec)
1. Duty Cycle, D = T
2, Per Unit Base = RthJA = 170°CNV
3. TJM - TA = PDMZthJAm
4. Surface Mounted
10 100 600
www.vishay.com
Document Number: 71415
S-03175-Rev, A, 05-Mar-01
“3% Si1913EDH
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
1o-4 10-3 10-2 IO-I 1 10
Square Wave Pulse Duration (sec)
Document Number: 71415 www.vishay.com
S-03175-Rev. A, 05-Mar-01 5
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