SI1912EDH ,N-Channel 20-V (D-S) MOSFET with Copper LeadframeS-03176—Rev. A, 05-Mar-01 1YYSi1912EDHNew ProductVishay Siliconix ..
SI1913EDH ,P-Channel 20-V (D-S) MOSFETS-03175—Rev. A, 05-Mar-01 1YYSi1913EDHNew ProductVishay Siliconix ..
SI1917EDH ,P-Channel 20-V (D-S) MOSFETS-03174—Rev. A, 07-Mar-01 1YYSi1917EDHNew ProductVishay Siliconix ..
SI1972DH-T1-E3 , Dual N-Channel 30-V (D-S) MOSFET
SI1988DH-T1-E3 , Dual N-Channel 20-V (D-S) MOSFET
SI1988DH-T1-E3 , Dual N-Channel 20-V (D-S) MOSFET
SIW1721BFIG-T13 , BLUETOOTH® RADIO MODEM
SIW3000AIP1 , ULTIMATEBLUE RADIO PROCESSOR
SIW3000GIP1-T13 , ULTIMATEBLUE RADIO PROCESSOR
SIW3500DIF1 , ULTIMATEBLUE
SIWC73-6R8 , Electrical Characteristics 25 C 100KHz, 0.1V
SIZ704DT-T1-GE3 , N-Channel 30-V (D-S) MOSFETs
SI1912EDH
N-Channel 20-V (D-S) MOSFET with Copper Leadframe
VISHAY
Si1912EDH
New Product
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) mstom (Q) ID (A)
0.280 @ VGS = 4.5 V 1.28
20 0.360 @ VGS = 2.5 v 1.13
0.450 @ Kas = 1.8 v 1.0
SOT-363
SC-7o (6-LEADS)
1 "?-s D,
2 El G2
Marking Code
Lot Traceability
and Date Code
Part ft Code
FEATURES
. TrenchFET© Power MOSFETS: 1.8-V Rated
. ESD Protected: 2000V
. Thermally Enhanced SC-70 Package
APPLICATIONS
. Load Switching
. PA Switch
. Level Switch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS 20
Gate-Source Voltage VGS i 12
TA=25°C 1.28 1.13
Continuous Drain Current (TJ = 150°C)a ID
TA = 85°C 0.92 0.81 A
Pulsed Drain Current IBM 4
Continuous Diode Current (Diode Conduction)" ls 0.61 0.48
TA = 25°C 0.74 0.57
Maximum Power Dissipation" PD W
TA = 85°C 0.38 0.30
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 130 170
Maximum Junction-to-Ambienta R
Steady State WA 170 220 "'CA/V
Maximum Junction-to-Foot (Drain) Steady State Rm}: 80 100
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71408 www.vishay.com
S-03176-Rev. A, 05-Mar-01
Si1912EDH VISHAY
Vishay Siliconix New Product
SPECIFICATIONS IT., = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) Vos = VGS, ID = 100 WA 0.45 V
VDS=0VYVGS= i4.5V i1 WA
Gate-Body Leakage less
N/Ds=0VVGs=ce12V 21:10 mA
VDS=16V,VG5=0V 1
Zero Gate Voltage Drain Current loss WA
VDS=16V,VGS=0V.TJ=85°C 5
On-State Drain Current3 |D(0n) VDS = 5 V, I/ss = 4.5 V 2 A
VGS = 4.5 V, ID = 1.13 A 0.220 0.280
Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V ID = 0.99 A 0.281 0260 Q
Vas =1.8 V, ID = 0.2 A 0.344 0.450
Forward Transconductancea 9ts VDS = 10 V, ID = 1.13 A 2.6 S
Diode Forward Voltage3 Vsro ls = 0.48 A, VGs = 0 V 0.80 1.2
Dynamicb
Total Gate Charge Qg 0.65 1.0
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 1.13 A 0.2 nC
Gate-Drain Charge di 0.23
Turn-On Delay Time [mm 45 70
Rise Time tr VDD = 10 V, RL = 20 g 85 130 ns
Turn-Off Delay Time imam ID - os A, VGEN = 4.5 V, Rs = 6 Q 350 530
Fall Tlme tf 210 320
a. Pulsetest; pulse width 5 300 113. duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage
10 10,000
g Its. 100
'g 6 'l--,' 10
8 4 8 1
U) (I)
.8 8 0.1
/" 0.01
0 ' 0.001
0 4 8 12 16 o 3 6 9 12 15
VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71408
2 S-03176-Rev, A, 05-Mar-01
\HSHAY
Si1912EDH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
VGS = 51hru 2 V
g.] 1.5V
ts 1.0
0 1 2 3 4
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
C 0.4 - v = 1 8 v
TE 'IC,,,,',.',.,.,..,...----''':''':','.
8 I/ss = 2.5 v
5 0.3 --.---'- 1
O VGS = 4.5 V
E: 0.2
0.0 0.5 1.0 1.5 2.0
b - Drain Current(A)
Gate Charge
A VDS = 10 V
ty 4 ID: 1.13 A v,,/'''
o,1,-'',, 2 /
0.0 0.3 0.6 0.9 1.2 1.5
Qg - Total Gate Charge (nC)
rosmn) — On-Resistance (g)
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
2.0 _ _
Tc = -55oC
25°C 1
1.5 "'sslsi
0.0 ‘2
0.0 0.5 1.0 1.5 2.0
VGS - Gate-to-Source Voltage (V)
Capacitance
0 4 8 12 16 20
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.5 l l /'"
VGS=4.5V
1.4 7 ID=1.13 A /
0.8 4/
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature CC)
Document Number: 71408
S-03176-Rev. A, 05-Mar-01
www.vishay.com
Normalized Effective Transient
Si1912EDH
VISHAY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
ls — Source Current (A)
VGS(th) Variance (V)
Thermal Impedance
Source-Drain Diode Forward Voltage
TJ =1soac
0 0.2 0.4 0.6 0.8 1.0 1.2
V30 - Source-to-Drain Voltage (V)
Threshold Voltage
b=100 ps/k
0.1 ti
-0.1 "s.
-50 -25 0 25 50 75 100 125 150
To - Temperature (°C)
rDS(0n) — On-Resistance (9)
Power (W)
On-Resistance vs. Gate-to-Source Voltage
1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
0.1 1 10 100 600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
N, 0.02
Single Pulse
10-4 10-3
10-2 IO-l
Square Wave Pulse Duration (sec)
Notes:
_.L: _
1. Duty Cycle, D = T
2, Per Unit Base = RthJA = 170°CNV
3. TJM - TA = PDMZthJAm
4. Surface Mounted
10 100 600
www.vishay.com
Document Number: 71408
S-03176-Rev, A, 05-Mar-01
“3% Si1912EDH
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
1o-4 10-3 10-2 IO-I 1 10
Square Wave Pulse Duration (sec)
Document Number: 71408 www.vishay.com
S-03176-Rev. A, 05-Mar-01 5
:
www.loq.com
.
