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SI1902DL
Dual N-Channel 2.5-V (G-S) MOSFET
VISHAY
Si1902DL
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
Vos (V) rDS(on) (C2) In (A)
20 0.385 @ VGS = 4.5 v 0.70
0.630 @ VCs = 2.5 v 0.54
SOT-363
SC-70 (6-LEADS)
s, E IL. 6 D1
l-se-l
Top View
e,te,t!J't1:',
'ts?','',''',";, 'wrtsis
Marking Code
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS 20
Gate-Source Voltage VGS l 12 V
TA = 25°C 0.70 0.66
Continuous Drain Current (TJ = 150"C)a TA = 85''C ID 0.50 0.48
Pulsed Drain Current IDM 1.0 A
Continuous Source Current (Diode Conduction)a ls 0.25 0.23
TA = 25°C 0.30 0.27
Maximum Power Dissipation" TA = 85''C PD 0.16 0.14 W
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 360 415
Maximum Junction-to-Ambient" Steady State RNA 400 460 “CNV
Maximum Junction-to-Foot (Drain) Steady State RthJF 300 350
Surface Mounted on l" x l" FR4 Board.
Document Number: 71080
S-21374-Rev. E, 12-Aug-02
www.vishay.com
Si1902DL “3%
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGsnh) VDS = VGS, ID = 250 0A 0.6 1.5 V
Gate-Body Leakage less VDS = 0 V, VGS = i 12 V ch 100 nA
VDS=16V,VGS=OV 1
Zero Gate Volta e Drain Current I
g DSS VDs=16V,Vss=0V,Tu=85c'C 5 ”A
On-State Drain Current3 low“) I/os 2_' 5 V, VGS = 4.5 V 1.0 A
VGS = 4.5 v, ID = 0.66 A 0.320 0285
Drain-Source On-State Resistancea rDs(on) Q
VGS = 2.5 V, ID = 0.40 A 0.560 0.630
Forward Transconductancea gfs Vos = 10 V, ID = 0.66 A 1.5 S
Diode Forward Voltagea VSD ls = 0.23 A, VGS = 0 V 0.8 1.2
Dynamicb
Total Gate Charge Q9 0.8 1.2
Gate-Source Charge Qgs Vos = 10 V, VGS = 4.5 V, ID = 0.66 A 0.06 nC
Gate-Drain Charge di 0.30
Turn-On Delay Time td(on) 10 20
Rise Time tr Von = 10 v, RL = 20 Q 16 3O
Turn-Off Delay Time td(ott) ID - 0.5 A, VGEN = 4.5 V, Rs = 6 Q 10 20 ns
Fall Tlme tf 10 20
Source-Drain Reverse Recovery Time trr IF = 0.23 A, di/dt = 100 Alps 20 4O
a. Pulse test; pulse width 2 300 us, duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
1.0 1.0
VGS = 5 thru 2.5 V
0.8 I 0.8
Cir" 2 V Ci:.]
E 0.6 E 0.6
a.) (D
t ,,e'" x:
E 0.4 E 0 4 '
I , 1 C = 125°C
_ 0.2 - 0.2
1.5 V 25°C
ic'J,2,i/,/f/' -55 w
0.0 0.0 j l
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71080
2 S-21374-Reu E, 12-Aug-02
VISHAY
Si1902DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
g 0.6 V65 = 25 V
g _---..
L 0.4 VGS = 4.5 v -
0.0 0.2 0.4 0.6 0.8 1.0
ID - Drain Current (A)
Gate Charge
Vros = 10 V
3 ID = 0.66 A o,,,,w''''
g o,,,,w'''''"
ir. w''''"
16 2 /
0.0 0.2 0.4 0.6 0.8
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
o T J = 150°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V50 - Source-to-Drain Voltage (V)
C - Capacitance (pF)
rDS(on) - On-Resistance (Q)
rDS(on) - On-Resistance (9)
(Normalized)
Capacitance
Js Coss
20 cC'i'r's'e--
0 4 8 12 16 20
I/os - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 4.5 V /
ID = 0.66 A
0.8 v,,,,-''''''
-50 -25 0 25 50 75 100 125 150
T J - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
ID = 0.66 A
0.6 Ns,,
0.4 "s,.,,.
"'"'--s....
o 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Document Number: 71080
S-21374-Reu. E, 12-Aug-02
www.vishay.com
Si1902DL
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage
0.1 "ss,
ID = 250 11A
g -o.o
g -0 1 'N. a
> 's s
gi" k'.
i?," o 2 k
> - . 'ss,
-50 -25 0 25 50 75 100 125 150
T: - Temperature (°C)
Single Pulse Power
10'2 IO-l 1 10 100 600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
_.L: _
1. Duty Cycle, D = T,
2. Per Unit Base = Rth0A =400°CNV
3. TJM - TA = PDMZthA“)
4. Surface Mounted
10 100 600
g Duty Cycle = 0.5
s 3 0.2
ifj g Notes:
[t E 0.1 T
g E 0.1 PDM
Single Pulse
10-4 ltr' 10-2 10-1 1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
"t' Duty Cycle = 0.5
3% 0.2
if',' g
8 t, 0.1
Single Pulse
10-4 10-3 10-2 IO-l
Square Wave Pulse Duration (sec)
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Document Number: 71080
S-21374-Reu E, 12-Aug-02
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