SI1901DL ,Dual P-Channel 20-V (D-S) MOSFETS-01886—Rev. A, 28-Aug-00 1YYSi1901DLNew ProductVishay Siliconix
SI1901DL
Dual P-Channel 20-V (D-S) MOSFET
Si1901DL
VISHAY
New Product Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) '0 (mA)
20 3.8 @ VGS = -45 v -180
- 5.0 @ Kas = -2.5 v -100
SOT-363
SC-70 W-Leads)
SI I: I ill ll El D, Marking Code
i" QD XX i,':
G1 E _| El G2 Lot Traceability
and Date Code
D2 3 -ilE-rn S2 Part# Code
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage I/os -20
Gate-Source Voltage VGS l a
TA = 25°C -180
Continuous Drain Current (TJ = 1500C)a ID
TA = 70°C -140 mA
Pulsed Drain Current IBM -500
TA = 25°C 0.20
Maximum Power Dissipationa PD W
TA = 70°C 0.13
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient" RthJA 625 'CAN
a. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 71304 www.vishay.com
S-01886-Rev. A, 28-Aug-00
Si1901DL VISHAY
Vishay Siliconix New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = O V, ID = -10 pA -20 -24 V
Gate-Threshold Voltage Vegan) VDS = VGs, ID = -50 WA -0u -0.9 -1 .5
Gate-Body Leakage IGSS VDS = 0 V, VGs = i 8 V l 2 l 100 A
VDS = -20 V, Veg = O V -0.001 -100
Zero Gate Voltage Drain Current IDSS
N/vs---" V,VGS= 0V, To-- 55°C -1 WA
VGS s -A.5 V, VDS = -8.0 V -400
On-State Drain Currents 'D(on) mA
V68 s -2.5 V, VDS = -5.0 V -120
VGS = -4.5 V, ID = -180 mA 2.6 3.8
Drain-Source On-State Resistance" rDS(0n) Q
VGS = -2.5 V, ID = -75 mA 4.0 5.0
Forward Transconductancea gfs VDS = -2.5 V, ID = -50 mA 200 mS
Diode Forward Voltage" VSD ls = -50 mA, VGS = 0 V Ah7 -ld? V
Dynamic
Total Gate Charge Qg 350 450
Gate-Source Charge Qgs VDs = -5.0 V, VGS = -4.5 V, ID = -100 mA 25 PC
Gate-Drain Charge di 125
Input Capacitance Ciss 20
Output Capacitance Coss Vos = -51) V, VGS = 0 V, f= 1 MHz 14 pF
Reverse Transfer Capacitance Crss 5
Switching', C
Turn-On Delay Time g(on, 7 12
Rise Time tr VDD = -3.0 V, RL = 100 Q 25 35 ns
Turn-Off Delay Time tam) ID = -0.25 A, VGEN = -A.5 V Rs = 10 Q 19 30
Fall Time tt 9 15
a. Pulse test; pulse width s 300 ps, duty cycle s 2%.
b. For design only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
www.vishay.com Document Number: 71304
S-01886-Rev. A, 28-Aug-00
VISHAY
Si1901DL
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
I D — Drain Current (A)
rDS(on) — On—Resistance ( Q)
VGS — Gate-to—Source Voltage (V)
Output Characteristics
1 2 3 4
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.5 1.0 1.5 2.0 2.5 3.0
b - Drain Current (A)
Gate Charge
- ID=80mA
VDS=6V
o,,,,w'''''"
100 200 300 400 500 600
Qg - Total Gate Charge (pC)
roam) — On-Resistance (Q)
| D — Drain Current
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
Tc = -55''C
25°C\ //
/125°C
0.5 1.0 1.5 2.0 2.5 3.0
N/ss - Gate-to-Source Voltage (V)
Capacitance
3 6 9 12
Vos - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
- Iro=180 mA of
VGS = 4.5 V
Ill w,,,,,,,''''''''
,,,,rs''"
v,,,.'''''
-25 O 25 50 75 100 125 150
T: - Junction Temperature (°C)
Document Number: 71304
S-01886-Rev. A, 28-Aug-00
www.vishay.com
Si1901DL
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
T J = 150°C 5 "
if 0.1 8 4 l
y .15 ID = 180 mA
Ji' 0 01 'l "s.
I - A 2 -""-
0.001 O
0.00 0.5 01 1.5 1 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage
0.3 l l
ID = 50 MA s,,,,,,-''''''
0.2 //
sl).'.] 0.0
> s,,,,,,-'''''''
-0.1 s,,,,,,,,""'
-50 -25 0 25 50 75 100 125 150
TJ - Temperature (°C)
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Document Number: 71304
4 S-01886-Rev. A, 28-Aug-00
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