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SI1539DL
Complementary 30-V (D-S) MOSFET
VISHAY
Si1539DL
Vishay Siliconix
Complementary 30-V (D-S) MOSFET
PRODUCT SUMMARY s1if
Vos (V) rDS(on) (Q) ID (A) G ks''
ste bos
0.480 @ VGS = 10 v 0.63 4 et
N-Channel 30 9001
0.700 @ VGS = 4.5 V 0.52
0.940 © VGS = -10 V -O.45
P-Channel -30
1.700 @ VGS = -4.5 v -023
SOT-363
SC-70 (6-LEADS)
S1 1 Ti? 6 D1 Marking Code
G1 2 5 G2 Lot Traceability
and Date Code
D2 3 TI 4 S2 Part # Code
Top [few
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
N-Channel P-Channel
Parameter Symbol 5 secs Steady State 5 secs Steady State Unit
Drain-Source Voltage V93 30 -30 V
Gate-Source Voltage VGS 120
TA = 25°C 0.63 0.54 - 0.45 -0.42
Continuous Drain Current (To = 150°C)3 ID
TA = 85°C 0.45 0.43 -O.32 -0.31
Pulsed Drain Current 'DM 1.0
Continuous Source Current (Diode Conduction)" Is 0.25 0.23 -O.25 -0.23
TA = 25°C 0.30 0.27 0.30 0.27
Maximum Power Dissipation" Pro W
TA=85°C 0.16 0.14 0.16 0.14
Operating Junction and Storage Temperature Range T J, Tsig -55 to 150 "C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 360 415
M ' ' - -A V a R
ax1mum Junction to mblent Steady State WA 400 460 ''C11N
Maximum Junction-to-Foot (Drain) Steady State Rth 300 350
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71250 www.vishay.com
S-21374-Rev. B, 12-Aug-02
Si1539DL
IE=7'"
VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
VDS = Veg, ID = 250 11A N-Ch 1.0
Gate Threshold Voltage Vesah) V V I 250 WA P Ch 1 0 V
DS = Gs, D= - - - V
N-Ch i 100
Gate-Body Leakage less Vos = 0 V VGS = d: 20 V P Ch 1100 nA
I/rss = 24 v, N/ss = o v N-Ch 1
VDS = -24 v, VGS = 0 v P-Ch -l
Zero Gate Voltage Drain Current loss o 11A
VDs=24N/,Vss=0V,TJ--85oC N-Ch 5
VDS = -24 V, VGS = 0 V, To = 85°C P-Ch -5
vDs 25v,sz=1ov N-Ch 1.0
On-State Drain Currenta ID(on) V < 5 V V 10 V P Ch 1 0 A
DS _ - , GS = - - - .
VGS = 10 V, ID = 0.59 A N-Ch 0.410 0.480
vss = -10 V, ID = -0.42 A P-Ch 0.800 0.940
Drain-Source On-State Resistance" roam) V 4 5 V I O 2 A N Ch 0 600 O 700 C2
GS = . , D = . - . .
VGS = -4.5 v, ID = -0.2 A P-Ch 1.5 1.700
VDS = 15 V, ID = 0.59 A N-Ch 0.75
Forward Transconductancea ge, V 15 V I 0 42 A P Ch 0 5 s
DS = - , D = - . - .
IS = 0.23 A, VCs = 0 v N-Ch 0.8 1.2
Diode Forward Voltagea VSD I 0 23 A V 0 V P Ch 0 86 1 2 V
s = - . , GS = - - . - .
Dynamicb
N-Ch 0.86 1.4
Total Gate Charge 09
N-Channel P-Ch 0.9 1.4
VDS= 15V, Vss=101/, |D=0.59A N-Ch 0.24
Gate-Source Charge 095 P Ch 0 21 nC
P-Channel - .
VDS = -15 V, VGS = -10 V, ID = -0.42 A N-Ch 0.08
Gate-Drain Charge di P Ch 0 17
N-Ch 5 10
Turn-On Delay Time td(on) P Ch 4 10
N-Channel N-Ch 8 15
Rise Time tr VDD = 15 V, RL = 30 Q
lr:os0.5A,N/sEN=10V,Rs=6Q P-Ch 8 15
. P-Channel N-Ch 8 15
Turn-Off Delay Time thott) VDD = -15 V, RL = 30 Q P-Ch 5 10 ns
ID a -0.5 A, vGEN = -10 V, RG = 6 Q
N-Ch 7 15
Fall TIme tr P Ch 7 15
Source-Drain t IF = 0.23 A, di/dt = 100 Alps N-Ch 15 30
Reverse Recovery Time rr IF = -0.23 A, di/dt = 100 AIMS P-Ch 20 40
a. Pulsetest; pulse width 5 300 us. duty cycle S 2%.
b. Guaranteed by design, not subject to production testing.
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DocumentNumber: 71250
S-21374-Reu. B, 12-Aug-02
VISHAY
Si1539DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
1.0 _ _
ll/ VGS = 10 thru 4V
CI 3 v
- 0.2 /
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
tD 1.2
O VGS = 4.5 V
J) V68 = 10 V
0.0 0.2 0.4 0.6 0.8 1.0
ID - Drain Current (A)
Gate Charge
F I/rss = 15 v /
V ID = 0.59 A
0.0 0.2 0.4 0.6 0.8 1.0
% - TotalGate Charge(nC)
C - Capacitance (pF)
rDsmn - On-Resistance (Q)
| D - Drain Current (A)
(Normalized)
N "CHAN N EL
Transfer Characteristics
To = 12500 /
25°C /
2iif/ -55 I
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate-to-Source Voltage (V)
Capacitance
50 _ Ciss
20 N, Coss
10 Crss
0 4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8 I _
VGS = 10 V
1.6 - ID=0.59A /,
1.4 ,,w'''''"
1.2 ',,,,,,e"'
"''''"
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
DocumentNumber: 71250
S-21374-Rev. B, 12-Aug-02
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. IE=7'"
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) N-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
g g 1.2 ID = 0.59 A
o T J = 150°C 8
a.) ctt
g t 0.9 l
I E" 0.6 'SSS..,
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
V30 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.2 "s, 4
"s, ID = 250 0A
8 -0.0 3
.5 g l
"i-i. -0.2 f? 2 t
> "s, N
0.4 , 1 's
"ss,,, in"
-0.6 0 l
-50 -25 0 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600
T J - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
li Duty Cycle = 0.5
‘0 0.2
2' E Notes:
- 0.1 T
TD 1. PDM
g .5 1
E 11 _
'e -lt-I te "
air 1. Duty Cycle, D = T;
2. Per Unit Base = RthJA =400°CIW
Sin le Pulse 3, TJM _ TA = PDMZWAG)
g 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71250
2.4 S-21374-Reu. B, 12-Aug-02
“3% Si1539DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) N-CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS ttttV c UNLESS NOTED) P-CHANNEL
Output Characteristics Transfer Characteristics
1.0 r 1.0 x I
t,,,,t'." l l To = -55°c
/ VGs=10thrU5V l
0.8 I 0.8 25°C
E 0.6 e 0.6
'5 / 4 V '5
g 2 125°C
a 0.4 // we"'''" a 0.4
D ,,,w''" D
0.2 bf 2 V 3 V 0.2 /
0.0 0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
3.0 80
, / F," 60 \ em
7% 2.0 8 'ss...,....,
d? VCs = 4.5 V i4
O 1.5 , 40 l
tj?; 1.0 VGS = 10 V - Q C
20 "'''s...
0.0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Document Number: 71250
www.vishay.com
S-21374-Rev. B, 12-Aug-02
Si1539DL
IE=7'"
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
P-CHANNEL
Gate Charge
10 _ /
' VDS = 15 V
V ID = 0.42 A s,//
E t,,p/"
0.0 0.2 0.4 0.6 0.8 1.0
% - TotaIGate Charge(nC)
Source-Drain Diode Forward Voltage
TJ = 150°C
| S - Source Current (A)
TJ=25°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage(V)
Threshold Voltage
ID = 250 11A ,,,,w''''
0.2 ",,w''''
VGS(th) Variance (V)
-50 -25 0 25 50 75 100 125 150
To - Temperature (°C)
roam) - On-Resistance (Q)
rDS(0n) - On-Resistance (9)
Power (W)
(Normalized)
On-Resistance vs. Junction Temperature
1.6 _ l
N/ss = 10 V
ID = 0.42 A
1.2 //
-50 -25 0 25 50 75 100 125 150
To - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
2.0 ID = 0.42 A
1.5 N,
1.0 "ss,
a""---...
0 2 4 6 8 1O
VGS - Gate-to-Source Voltage (V)
Single Pulse Power
10-3 1ty2 IO-l 1 10 100 600
Time (sec)
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DocumentNumber: 71250
S-21374-Reu. B, 12-Aug-02
“3% Si1539DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Ambient
li' Duty Cycle = 0.5
h' 'i. 0.2
"g E Notes:
- 0.1 T
T7 -_ PDM
M fE l
5 -lt-I t2
a 1. Duty Cycle, D = T;
2. Per Unit Base = RthJA = 400°CIW
. 3. TJM - TA = PDMZthJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li' Duty Cycle = 0.5
212 0.2
if',' g
E ' 0.1
B lg 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 71250
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S-21374-Rev. B, 12-Aug-02
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