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SI1501DL
Complementary 20-V (D-S) Low-Threshold MOSFET
VISHAY
Si1501DL
Vishay Siliconix
Complementary 20-V (D-S) Low-Threshold MOSFET
PRODUCT SUMMARY
Channel VDs (V) rDs(on) (Q) ID (mA)
2.0 @ VGS = 4.5 v 250
N-Channel 20
2S@Vcs=2SV 150
3.8@VGs=-4.5V -180
P-Channel -20
5.0 @ VGS = -2.5 v -100
SOT-363
SC-70 W-Leads)
I-''- Marking Code
SI 1 6 D,
ts1lEi-C, El G2
D2 iEi-iES-rn S2
Top Mew
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage V03 20 -20 V
Gate-Source Voltage VGS d: 8 d: 8
TA = 25"C 250 -180
Continuous Drain Current (To = 150°C)3 ID
TA = 70°C 200 -140 mA
Pulsed Drain Current IBM 500 -500
TA = 25''C 0.20
Maximum Power Dissipation" PD W
TA = 70°C 0.1 3
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambienta RthJA 625 (Total) °C/W
a. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 71303
S-03840-Rev. B, 21-May-01
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Si1501DL
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
VGS = 0 V, ID = 10 WA N-Ch 20 24
Drain-Source Breakdown Voltage V(BR)DSS V 0 V I 10 A P Ch 20 24
GS = , D= - M - - -
VDS = VGS, ID = 50 “A N-Ch 0.4 0.9 1.5
Gate Threshold Voltage 1/Gith) VDS = VGS ID = -50 uA P-Ch -0 4 -0 9 -1 5
N-Ch d: 2 i 100
Gate-Body Leakage IGSS Vos = 0 V, VGS = 21:8 V P Ch i2 i100
VDs = 20 V, VGS = 0 V N-Ch 0.001 100
Vos = -20 V, VGs = 0 V P-Ch -0,001 -100
Zero Gate Voltage Drain Current loss Q
Vros=20V,Vcs=0V,To=55oC N-Ch 1 A
VDS = -20 V, VGS = 0 V, To = 55°C P-Ch -1 11
Vros 2 2.5 V, VGS = 5.0 V N-Ch 120
V03 5 -2.5 V, VGS = -5.0 V P-Ch -120
On-State Drain Currenta Iman) V > 4 5 V V 8 0 V N Ch 400 mA
DS - . ' GS = . -
VDS s -45 V, VGS = -8.0 V P-Ch -400
VGS = 2.5 V, ID = 150 mA N-Ch 1.6 2.5
Was = -2.5 V, ID = -75 mA P-Ch 4 5
Drain-Source On-State Resistancea rDS(on) V 4 5 V I 250 mA N Ch 1 2 2 0 C2
GS = . , D = - . .
VGS = -A.5 V, lo = -180 mA P-Ch 2.6 3.8
vDS = 2.5 V, ID = 50 mA N-Ch 150
Forward Transconductancea gfs V 2 5 V I 50 mA P Ch 200 ms
DS = - . , D = - -
Is = 50 mA, N/ss = 0 V N-Ch 0.7 1.2
Diode Forward Voltagea VSD ls = -50 mA VGS = 0 V P-Ch -0 7 -1 2 V
Dynamicb
G C Q N-Ch 300 450
Total ate harge g
N-Channel P-Ch 300 450
G t s Ch Q VDS= 5V, VGS=4.5 V, lo-- 100 mA N-Ch 25 c
a e- ource arge gs p
P-Channel P-Ch 25
VDs=-5V, VGs=-4.5V, Io=-100mA N-Ch 100
Gate-Drain Charge di P Ch 100
N-Ch 15
Input Capacitance Ciss
N-Channel P-Ch 15
VDS=5V,VGS=0V N-Ch 11
Output Capacitance Crass P Ch I P Ch 11 pF
- anne -
VDs = -5 V, VGs = 0 V N-Ch 5
Reverse Transfer Capacitance Crss P Ch 5
Switching
N-Ch 7 12
Turn-On Time tcl(on) P Ch 7 12
N-Channel -
Rise Time tr VDD = 3 V, RL = 100 Q N Ch 25 35
ID = 0.25 A, VGEN = 4.5 V, RG = 10 Q P-Ch 25 35
N-Ch 19 30
. P-Channel
Turn-Off Delay Time td(ott) VDD = -3 V, RL = 100 Q P-Ch 19 30
ID: -0.25A, VGEN=-4.5V, RG=109 N-Ch 9 15
Fall Time " P Ch 9 15
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width 5 300 MS. duty cycle s 2%.
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Document Number: 71303
S-03840-Reih B, 21-May-01
VISHAY
Si1501DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
1.25 _
VGS = 3.51hru 5 V 'o'
I: 3 v
5 0.75
I 0.50
0 1 2 3 4
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
1 2 3 4
ID - Drain Current (A)
Gate Charge
vDs=ev
7 |D=100 mA
o,,,,w''''''"
100 200 300 400 500 600
% - Total Gate Charge (pC)
rDS(on) — On—Resistance(§2)
C — Capacitance (pF) I D — Drain Current (A)
(Normalized)
N-CHANNEL
Transfer Characteristics
0.8 l l
TC = -55oC
0.6 254;
0.4 //)'/
0.0 0.5 1.0
1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Capacitance
20 L c:iss
Ps-.,..,
( Coss
10 "rm-...
a..-...-,
'ss,., Crss
0 4 8 12 16 20
Vos - Drain-to-Source Voltage (V)
1 6 On-Resistance vs. Junction Temperature
VGs=4.5V /
7 |D=100 mA
1.4 /''"
0.8 e,,,,,,-''''''
-50 -25 0 25 50 75 100 125 150
To - Junction Temperature CC)
Document Number: 71303
S-0384(r-Rev. B, 21-May-01
www.vishay.com .
Si1501DL
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
N-CHANNEL
Source-Drain Diode Forward Voltage
Tu =125°c
'8 — Source Current (A)
roam) — On—Resistance (Q)
0.00 0.3 0.6 0.9 1.2
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
= 250 mA
2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
0.1 |D=50uA
VGS(th) Variance (V)
-50 -25 0 25 50 75
TJ - Temperature CC)
125 150
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Document Number: 71303
S-03840-Reih B, 21-May-01
VISHAY
Si1501DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
P-CHANNEL
Output Characteristics
iii..". ig"
0.) tD
0 1 2 3 4
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
8 'tlg
"ici" o
0.0 0.5 1.0 1.5 2.0 2.5 3.0
ID - Drain Current (A)
Gate Charge
10 l l
A VDS = 6 v
2y 8 7 ID = 80 mA / A
8, " Cir
b' 6 b',' a
(n m. g
is. 8 0
io. 4 / I ,?.i..r..
(D /'''" f?
8 2 / f
o 100 200 300 400 500 600
% - Total Gate Charge (pC)
Transfer Characteristics
0.5 l l
TC = -55l
25°C /
0.3 \f/
/125°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Capacitance
Nss. Ciss
18 "_...--,
Ns, Coss
0 3 6 9 12
I/os - Drain-to-Source Voltage (V)
1 6 On-Resistance vs. Junction Temperature
VGS = 4.5 v s,,,,,,,,-''''''''
1.4- ko=180 mA ,,,,,,,w'''
0.8 ",,,e'''''
-50 -25 0 25 50 75 100 125 150
T: - Junction Temperature CC)
Document Number: 71303
S-0384(r-Rev. B, 21-May-01
www.vishay.com .
Si1501DL
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Tu = 150°C 5 r
a" g \
"c." 0.1 8 4
's 7.; ID = 180 mA
8 c? 3
a C.’ "s,.
I 0.01 A 2 -"e.
0.001 0
0.00 0.5 01 1.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage
th3 l l
ID = 50 WA w'''''
0.2 //
t, 0.1
"iz'," 0.0
> ',,,,,,,p'''''''
-0.1 w,,,,,,,""'
-50 -25 0 25 50 75 100 125 150
Ts - Temperature CC)
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6 S-03840-Reih B, 21-May-01
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