SI1303DL ,P-Channel 2.5-V (G-S) MOSFETS-03721—Rev. C, 07-Apr-031YYSi1303DLVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED ..
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SI1303DL
P-Channel 2.5-V (G-S) MOSFET
VISHAY
Si1303DL
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
Vos (V) rDS(on) (Q) ID (A)
0.430 @ VGS = -4.5 v -0.72
-20 0.480 @ I/ss = -3.6 v -0.68
0.700 @ l/ss = -2.5 v -0.56
SOT-323
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Gl1'i,
Top Vew
Marking Code
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and Date Code
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ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS -20
Gate-Source Voltage VGS i 12
TA = 25°C -0.72 -0fi7
Continuous Drain Current (To = 150°C)3 ID
TA: 70°C -0.58 -0.54 A
Pulsed Drain Current IDM -2.5
Continuous Diode Current (Diode Conduction)a ls -0.28 -0.24
TA = 25°C 0.34 0.29
Maximum Power Dissipation" PD W
TA = 70°C 0.22 0.19
Operating Junction and Storage Temperature Range T J, Tstg ~55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 315 375
Maximum Junction-to-Ambienta RthUA
Steady State 360 430 “CM
Maximum Junction-to-Foot (Drain) Steady State RthJF 285 340
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71075 www.vishay.com
S-03721-Rev. C, 07-Apr-03
Si1303DL
VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(lh) I/tos = VGS, ID = -250 “A -0.6 V
Gate-Body Leakage less VDs = 0 V, VGS = ck 12 V cl: 100 nA
VDs=-20V,VGs=0V -1
Zero Gate Voltage Drain Current loss 11A
Vos-- -20V,VGS=OV,TJ=7O°C -5
On-State Drain Currenta ID(on) VDS = -5 V, VGS = -4.5 V -2.5 A
VGS = -4.5 V, ID = -1 A 0.360 0.430
Drain-Source On-State Resistancea rrosean) VGs = -3.6 V, ID = -0.7A 0.400 0.480 Q
VGS = -2.5 V, ID = -0.3A 0.560 0.700
Forward Transconductancea gfs VDs = -10 V, ID = -1 A 1.7
Diode Forward Voltagea VSD ls = -0.3 A, VGS = 0 V -1.2 V
Dynamicb
Total Gate Charge % 1.7 2.2
Gate-Source Charge Qgs VDs = -10 V, VGS = -4.5 V, ID = -l A 0.38 nC
Gate-Drain Charge di 0.63
Turn-On Delay Time tam) 9 15
Rise Time tr VDD = -10 V. RL = 10 Q 31 45
Turn-Off Delay Time tam“, ID _ -1 A, VGEN = -4.5 V, Re = 6 C2 12.5 20 ns
Fall Time tr 14 20
Source-Drain Reverse Recovery Tlme trr IF = -1 A, di/dt = 100 Alps 35 55
a. Pulsetest; pulse width 5 300 ps, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
VGS=4.5V l l
T =- Ct
I C1 55 C I /
5 |25°C‘ ytf/f,,
ii;". _iaC:'., 4 ll 4
"ii' "ii' tv/ij)''?'",
8 8 3 ff" 125''C'
t5 5 2 A,:,)
0 2 4 6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Vos - Drain-to-Source Voltage(V) VGS - Gate-to-Source Voltage(V)
www.vishay.com DocumentNumber: 71075
2 S-03721-Rev. C, 07-Apr-03
\HSHAY
SH303DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
fit 1.6
8 VGS = 2.5 V
' 0 8 /
V VGS = 3.6 V /
VGS = 4.5 V
0 1 2 3 4 5 6
ID - Drain Current (A)
Gate Charge
VDS = 10 V
s. ID = 1 A
O 1 2 3 4
09 - TotaIGate Charge(nC)
Source-Drain Diode Forward Voltage
To = 150°C
Is - Source Current(A)
0.0 0.3 0.6 0.9 1.2 1.5
V30 - Source-to-Drain Voltage(V)
C - Capacitance (pF)
rDs(0n) - On-Resistance(§2)
I’Dsmn) - On-Resistance (9)
(Normalized)
Capacitance
200 ( Ciss
0 4 8 12 16 20
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 l _
VGS = 4.5 V 'ee'""
ID = 1 A -,--'''"
1.2 ww''"
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
15 ID = 1 A
0 1 2 3 4 5 6
VGS - Gate-to-Source Voltage (V)
Document Number: 71075
S-03721-Rev. C, 07-Apr-03
www.vishay.com
Si1303DL f,,sWAir'
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4 20
0.3 16 (
a 0.2 ',,,V'''''' 12 (
g ',,,,,,,p'''''''' E l
E 0.1 " 5 - o
> it l TA - 25 C
gi" w,,.''''" E 8 N
i?," i
-0.1 'w'''''' 4 h
-0.2 0
-50 -25 0 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
f, Duty Cycle = 0.5
Il 8 0
"if',' E
it ' th1 J,,,-,
T7 L th1 DM
I': E 1
g -21 t2 t
a 1. Duty Cycle, D = T1
2. Per Unit Base = RNA = 360°CIW
. 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
5 Duty Cycle = 0.5
Il a 0.2
"if',' g
tt , 0.1
'i' I? 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71075
4 S-03721-Rev. C, 07-Apr-03
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