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SI1032R-SI1032X
N-Channel 1.8-V (G-S) MOSFET
VISHAY
Si1032R/X
New Product
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
Vos (V) rDS(on) (Q) ID (mA)
5 @ VGS = 4.5 V 200
-20 7 @ I/ss = 2.5 v 175
9@Vss-- 1.8V 150
10@VGS= 1.5V 50
FEATURES BENEFITS
Low-Side Switching Ease in Driving Switches
Low On-Resistance: 5 Q
Low Threshold: 0.9 V (typ)
Fast Swtiching Speed: 35 ns
1.8-V Operation
Gate-Source ESD Protection
SC-75A or SC-89
Top Mew
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
1rregutlhFllirir0)
1 .5-V Rated
ESD Protected
Vishay Siliconix
MOSFETs
2000 V
APPLICATIONS
q Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories
q Battery Operated Systems
q Power Supply Converter Circuits
q Load/Power Switching Cell Phones, Pagers
SC-75A (SOT- 416): Si1032R
SC-89 WOT- 490): Si1032X
Marking Code: G
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Si1032R Si1032X
Parameter Symbol 5 secs Steady State 5 secs l Steady State Unit
Drain-Source Voltage Vos 20
Gate-Source Voltage bias l 6
TA = 25°C 200 140 210 200
Continuous Drain Current (TJ = 150°C)a ID
TA=85°C 110 100 150 140
Pulsed Drain Currenta IDM 500 600
Continuous Source Current (diode conduction)" k; 250 200 300 240
TA = 25°C 280 250 340 300
Maximum Power Dissipation" for SC-75 PD mW
TA=85°C 145 130 170 150
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150
Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V
c. Surface Mounted on FR4 Board.
Document Number: 71172 www.vishay.com
S-02970-Rev. A, 22-Jan-01
Si1032R/X
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) VDS = I/ss, ID = 250 WA 0.40 0.7 1.2 V
VDS=0V,VGs= iZ-SV i0.5 i1.0
Gate-Body Leakage less pA
VDS=OV,VGS= i4.5V $1.0 $3.0
VDS = 16 V, VGs = 0 V 1 500 nA
Zero Gate Voltage Drain Current loss
Vros=16N/,N/Gs=0V,To=85l 10 “A
On-State Drain Currenta Imam) VDs = 5 V, VGS = 4.5 V 250 mA
Vss=4.5 V, ID=200 mA 5
Vss=2.5V,lro=175mA 7
. - - . a
Drain Source On State Resistance rDS(on) VGS = 1.8 V, ID = 150 mA 9 Q
VDS=1.5V,ID=40mA 10
Forward Transconductancea gis VDs = 10 V, ID = 200 mA 0.5
Diode Forward Voltage' I/so Is = 150 mA, VGS = 0 V 1.2 V
Dynamicb
Total Gate Charge A; 750
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 150 mA 75 pC
Gate-Drain Charge di 225
Turn-On Delay Time {mm 50
Rise Time tr VDD = 10 V, RL = 47 Q 25 ns
Turn-Off Delay Time tu(ott) ID _ 200 mA, VGEN = 4.5 V Rs = 10 Q 50
Fall Tlme tf 25
a. Pulsetest; pulse width 5 300 us. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
0.5 600 I _
v 5th 1.8V TJLSSOC ///
sp'''''' GS - ru . 500
A I / 2 F, o
si, g / _ 25 C
E E 400 i
ll? 0.3 E o
t 'r, 125 C
.s 3 300
o 0.2 D
D CI 200
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5
VDs - Drain-to-Source Voltage (V)
VGs - Gate-to-Source Voltage (V)
www.vishay.com
Document Number: 71172
S-02970-Reu A, 22-Jan-01
VISHAY
Si1032R/X
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS NOTED)
I’Dsmn) - On-Resistance ( £2)
V GS — Gate-to-Source Voltage (V)
Is — Source Current (mA)
On-Resistance vs. Drain Current
VGS = 1.8 V
10 - VGS = 2.5 v
VGS = 4.5 V
0 50 100 150 200 250
ID - Drain Current (mA)
Gate Charge
v.33 = 10 v
ID = 150 mA
0.0 0.2 0.4 0.6 0.8
09 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ =125°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V30 - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDs(0n) — On-Resistance (Q)
I’Dsmn) - On-Resistance (9)
(Normalized)
Capacitance
100 1 I
VGS = 0 V
' f= 1 MHz
\ Coss
Ic,.., a..-.-,
0 4 8 12 16 20
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 45 V
ID = 200 mA
VGS = 1.8 V
lo = 175 mA
0.80 s,,,,,,-''''''''
-50 -25 0 25 50 75 100 125
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
ID = 200 mA
b = 175 mA f
0 1 2 3 4 5 6
VGS - Gate-to-Source Voltage (V)
Document Number: 71172
S-0297(r-Rev. A, 22-Jan-01
www.vishay.com
Si1032R/X VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS NOTED)
Threshold Voltage Variance vs. Temperature less vs. Temperature
0.3 3.0
ID = 0.25 mA o,,,//"
"s. 2.0
less - (MA)
V650,» Variance (V)
m...,..,---'''"
-0.3 0.0
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
To - Temperature (°C) To - Temperature (°C)
BVGSS vs. Temperature
-50 -25 0 25 50 75 100 125
TJ - Temperature (°C)
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1032R Only)
.5 Duty Cycle = 0.5
g 8 0.2
‘g g Notes:
- 0.1 T
8 tg 0.1 DM
.2 (E 1
E 11 _
'e -ly-1 t2 t1
a 1. Duty Cycle, D = T
2. Per Unit Base = RthJA = 500°CNV
' 3. TOM - TA = ProMZthoA(t)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71172
4 S-02970-Reu A, 22-Jan-01
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