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SI1031R-SI1031X
P-Channel 1.8-V (G-S) MOSFET
VISHAY
Si1031R/X
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (mA)
8@VGs= -45 V -150
-20 12 @ Vss = -2.5 v -125
15@Vss= -1.8 v -100
20 @ VGS = -1.5 v -30
FEATURES BENEFITS
High-Side Switching
Low On-Resistance: 8 Q
Low Threshold: 0.9 V (typ)
Fast Swtiching Speed: 45 ns
1.8-V Operation
Gate-Source ESD Protection
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation q
SC-75A or SC-89
1rregutlhFllirir0)
MOSFETs
1 .5-V Rated
ESD Protected
2000 V
APPLICATIONS
Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
SC-75A WOT- 416): Si1031R
SC-89 (SOT- 490): Si1031X
Marking Code: H
Top IAew
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Si1031R Si1031X
Parameter Symbol 5 secs Steady State 5 secs I Steady State Unit
Drain-Source Voltage Vos -20
Gate-Source Voltage V68 cl: 6
TA = 25°C -150 -140 -165 -155
Continuous Drain Current (TJ = 150°C)a ID
TA = 85°C -110 -100 -150 -125
Pulsed Drain Currenta IBM -500 -600
Continuous Source Current (diode conduction)" IS -250 -200 -340 -240
TA = 25°C 280 250 340 300
Maximum Power Dissipation" PD mW
TA=85°C 145 130 170 150
Operating Junction and Storage Temperature Range T J, Tsig -55 to 150 ''C
Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V
a. Surface Mounted on FR4 Board.
Document Number: 71171 www.vishay.com
S-02970-Rev. A, 22-Jan-01
Si1031R/X
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage Vegan) I/tos = VGS, ID = -250 “A -0.40 -1.20 V
VDS=0V,VGS= i2.8V i0.5 i1
Gate-Body Leakage less pA
VDS=0V,VGS=:E4.5V i1 i2
VDS = -16 V, VGS = 0 V -1 -500 nA
Zero Gate Voltage Drain Current loss
Vros=-16V,Vss--0V,T,j=85l -10 11A
On-State Drain Currenta Imam) VDS = -5 V, VGS = -45 V -200 mA
Vss=-4.5 V, b---150 mA 8
Vss=-2.5V,lD=-125mA 12
Drain-Source On-State Resistancea rDS(on) Q
VGs=-1.8V,lD=-100mA 15
Vss=-1.5V,lro=-30mA 20
Forward Transconductancea gfs Vos = -10 V, ID = -150 mA 0.4
Diode Forward Voltage' I/so Is = -150 mA, VGS = O V -1.2 V
Dynamicb
Total Gate Charge A; 1500
Gate-Source Charge Qgs VDs = -10 V, VGS = -45 V, ID = -150 mA 150 pC
Gate-Drain Charge di 450
Turn-On Delay Time tum") 55
Rise Time tr VDD = -10 V, RL = 65 Q 30 ns
Turn-Off Delay Time tu(ott) ID _ -150 mA, VGEN = -4.5 V, RG = 10 Q 60
Fall Tlme tf 30
Pulsetest; pulse width 5 300 MS. duty cycle 5 2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
0.5 500
1 2 V l 1 /
VGS=5thru 2.5V TJ=-55''C y
0.4 / 400 25°C _‘\~,
Ct..". 1.8 v E /
E) 0.3 I --- E 300 ff 125°C -
y 'e''"'"" y
O ",,P'''' O
E 0.2 E 200 f)
0.1 pr 100
0 1 2 3 4 5 6 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71171
2 S-02970-Reu A, 22-Jan-01
VISHAY
Si1031R/X
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS NOTED)
rDS
— On-Resistance(
VGS — Gate—to—Source Voltage (V)
Is — Source Current (mA)
On-Resistance vs. Drain Current
I v63: 1.8V
15 o//
VGS = 2.5 V
VGS = 4.5 V
0 200 400 600 800 1000
ID - Drain Current (mA)
Gate Charge
Vros=10V
lro=150mA
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
09 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ = 125°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V30 - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDs(0n) — On-Resistance (Q)
I’Dsmn) - On-Resistance (9)
(Normalized)
Capacitance
VGS = 0 V
100 f - 1 MHz
(cs, Coss
20 'u,,,,,,,.?
0 Crss ''''"----,
0 4 8 12 16 20
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 4.5 V /
ID = 150 mA
1.2 JJ'?-"'"'
1 0 VGS = 1.8 V -
' ID = 125 mA
J8 s,,,-'''"'
-50 -25 0 25 50 75 100 125
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
ID = 150 mA
ID = 125 mA
0 1 2 3 4 5 6
VGS - Gate-to-Source Voltage (V)
Document Number: 71171
S-0297(r-Rev. A, 22-Jan-01
www.vishay.com
Si1031R/X
Vishay Siliconix New Product
VISHAY
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS NOTED)
Threshold Voltage Variance vs. Temperature less vs. Temperature
0.3 3.0
0.2 2.5 /
ID = 0.25 mA w,,-'''' //
S Er- Vss=2.8V
g -0.0 I 1.5
gi" L3
8 -0.1 o,,-'''''''' 1.0 /
-0.2 0.5 /
s,,,--'''''"
-0.3 0.0
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
To - Temperature (°C) To - Temperature (°C)
BVGSS vs. Temperature
.,is's.' -1
(II) -6 _--..-
-50 -25 O 25 50 75 100 125
TJ - Temperature CC)
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1031 R Only)
"t' Duty Cycle = 0.5
.8 E Notes:
lt g 0.1 T
l? lr, 0.1 PDM
g .5 i
ts -lt-1 t2 t1
a 1. Duty Cycle, D = T2
2. Per Unit Base = RthJA =500°CIW
. 3. TJM - TA = PoMZthoA(t)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 IO-I 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71171
4 S-02970-Reu A, 22-Jan-01
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