SGW30N60 ,IGBTs & DuoPacksDynamic CharacteristicInput capacitance C V =25V, - 1600 1920 pFiss CEV =0V,Output capacitance C - ..
SGW30N60HS ,IGBTs & DuoPacksapplications offers:P-TO-220-3-1 P-TO-247-3-1- parallel switching capability(TO-220AB) (TO-247AC)- ..
SGW50N60HS , High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
SGW5N60RUFDTM ,Discrete, Short Circuit Rated IGBT with DiodeApplicationsAC & DC motor controls, general purpose inverters, robotics, and servo controls. C CCG ..
SGW5N60RUFDTM ,Discrete, Short Circuit Rated IGBT with DiodeElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SH3100 , Supervisory IC with I2C Interface and PWM
SIL15C-12SADJ-VJ , DC-DC CONVERTERS C Class Non-isolated
SIL620-3R3 , SMT Power Inductor
SIL630-1R5 , SMT Power Inductor
SIM-20ST , Infrared light emitting diode, side-view type
SIM-22ST , Infrared light emitting diode, side-view type
SIM300S , Wireless Module Solutions
SGW30N60
IGBTs & DuoPacks
SGP30N60,SGB30N60
SGW30N60
Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 μs
• Designed for:
- Motor controls- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution- high ruggedness, temperature stable behaviour
- parallel switching capability
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Maximum RatingsSGP30N60,SGB30N60
SGW30N60
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
Dynamic CharacteristicInput capacitance
Reverse transfer capacitance
SGP30N60,SGB30N60
SGW30N60
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT CharacteristicTurn-on delay time
Rise time
Fall time
Turn-on energy
Total switching energyVCC=400V,IC=30A,
VGE=0/15V,
RG= 11Ω,1)=180nH,1)=900pFEnergy losses include
“tail” and diode
SGP30N60,SGB30N60
SGW30N60
COLLE
OR CURRE
10Hz100Hz1kHz10kHz100kHz
20A
40A
60A
80A
100A
120A
140A
160A
COLLE
OR CURRE10V100V1000V
0.1A
10A
100A
f, SWITCHING FREQUENCYVCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function ofswitching frequency(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 11Ω)
Figure 2. Safe operating area(D = 0, TC = 25°C, Tj ≤ 150°C)
tot
ISS
25°C50°C75°C100°C125°C
50W
100W
150W
200W
250W
300W
COLLE
OR CURRE
25°C50°C75°C100°C125°C0A
10A
20A
30A
40A
50A
60A
TC, CASE TEMPERATURETC, CASE TEMPERATURE
Figure 3. Power dissipation as a functionof case temperature(Tj ≤ 150°C)
Figure 4. Collector current as a function ofcase temperature(VGE ≤ 15V, Tj ≤ 150°C)
SGP30N60,SGB30N60
SGW30N60
COLLE
OR CURRE1V2V3V4V5V
10A
20A
30A
40A
50A
60A
70A
80A
90A
COLLE
OR CURRE1V2V3V4V5V
10A
20A
30A
40A
50A
60A
70A
80A
90A
VCE, COLLECTOR-EMITTER VOLTAGEVCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics(Tj = 25°C)
Figure 6. Typical output characteristics(Tj = 150°C)
COLLE
OR CURRE2V4V6V8V10V
10A
20A
30A
40A
50A
60A
70A
80A
90A
100A
CE(sat)
COLLE
ITT
SATU
VO
-50°C0°C50°C100°C150°C1.0V
1.5V
2.0V
2.5V
3.0V
3.5V
4.0V
VGE, GATE-EMITTER VOLTAGETj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics(VCE = 10V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junctiontemperature(VGE = 15V)
SGP30N60,SGB30N60
SGW30N60
ITC
TI
10A20A30A40A50A60A10ns
100ns
1000ns
ITC
TI10Ω20Ω30Ω40Ω10ns
100ns
1000ns
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 9. Typical switching times as afunction of collector current(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 11Ω,Dynamic test circuit in Figure E)
Figure 10. Typical switching times as afunction of gate resistor(inductive load, Tj = 150°C, VCE = 400V,VGE = 0/+15V, IC = 30A,
Dynamic test circuit in Figure E)
ITC
TI
0°C50°C100°C150°C10ns
100ns
1000ns
GE(th)
ITT
TH
ESH
-50°C0°C50°C100°C150°C
2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
5.0V
5.5V
Tj, JUNCTION TEMPERATURETj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 30A, RG = 11Ω,
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature(IC = 0.7mA)
