SGR20N40LTM ,Discrete, IGBTApplicationStrobe flash.C CCG GD-PAKG EI-PAKGE CE EAbsolute Maximum Ratings T = 25°C unless oth ..
SGS13N60UFDTU ,Discrete, High Performance IGBT with DiodeElectrical Characteristics of IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Conditions ..
SGS13N60UFDTU ,Discrete, High Performance IGBT with Diodeapplications such as motor• High input impedancecontrol and general inverters where high speed swit ..
SGS23N60UFDTU ,Discrete, High Performance IGBT with DiodeElectrical Characteristics of IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Conditions ..
SGS23N60UFDTU ,Discrete, High Performance IGBT with Diodeapplications such as motor• High input impedancecontrol and general inverters where high speed swit ..
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SGR20N40LTF-SGR20N40LTM-SGU20N40LTU
Discrete, IGBT
SGR20N40L / SGU20N40L August 2001 IGBT SGR20N40L / SGU20N40L General Description Features Insulated Gate Bipolar Transistors (IGBTs) with a trench • High input impedance gate structure provide superior conduction and switching • High peak current capability (150A) performance in comparison with transistors having a planar • Easy gate drive gate structure. They also have wide noise immunity. These • Surface Mount : SGR20N40L devices are very suitable for strobe applications • Straight Lead : SGU20N40L Application Strobe flash. C C C G G D-PAK G E I-PAK GE C E E Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Description SGR / SGU20N40L Units V Collector - Emitter Voltage 400 V CES V Gate - Emitter Voltage ± 6V GES I Pulsed Collector Current 150 A CM (1) P Maximum Power Dissipation @ T = 25°C45 W C C T Operating Junction Temperature -40 to +150 °C J T Storage Temperature Range -40 to +150 °C stg Maximum Lead Temp. for soldering T 300 °C L purposes, 1/8” from case for 5 seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R Thermal Resistance, Junction-to-Case -- 3.0 °C/W θJC R (D-PAK) Thermal Resistance, Junction-to-Ambient (PCB Mount) -- 50 °C/W θJA (2) R (I-PAK) Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA Notes : (2) Mounted on 1” square PCB (FR4 or G-10 Material) ©2001 SGR20N40L / SGU20N40L Rev. A1
